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september 2010 doc id 17739 rev 1 1/12 12 STL15DN4F5 dual n-channel 40 v, 8 m ? , 15 a powerflat?(5x6) double island, stripfet? v power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge low gate drive power losses application switching applications ? automotive description the device is a dual n-channel stripfet? v. this power mosfet technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (fom). figure 1. internal schematic diagram type v dss r ds(on) max. i d STL15DN4F5 40 v 9 m ? 15 a (1) 1. the value is rated according r thj-pcb powerflat? (5x6) double island table 1. device summary order code marking package packaging STL15DN4F5 15dn4f5 powerflat?(5x6) double island tape and reel www.st.com
contents STL15DN4F5 2/12 doc id 17739 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STL15DN4F5 electrical ratings doc id 17739 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according r thj-c drain current (continuous) at t c = 25 c (silicon limited) 60 a i d (2) 2. the value is rated according r thj-pcb drain current (continuous) at t c = 25 c 15 a i d (2) drain current (continuous) at t c = 100c 10 a i dm (3) 3. pulse width limited by safe operating area drain current (pulsed) 60 a p tot (1) total dissipation at t c = 25c 60 w p tot (2) total dissipation at t c = 25c, t < 10 sec 4.3 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case (drain) (steady state) 2.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1i nch2, 2oz cu, t < 10 sec (see figure 3 ) thermal resistance junction-ambient 35 c/w table 4. avalanche data symbol parame ter value unit i av not-repetitive avalanche current, (pulse width limited by tj max.) 7.5 a e as (1) 1. tested at wafer level only. single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 24 v) 150 mj
electrical characteristics STL15DN4F5 4/12 doc id 17739 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v, i d = 7.5 a 89m ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz v gs = 0 - 1550 230 25 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 15 a v gs = 10 v (see figure 14) - 25 6 5.5 - nc nc nc
STL15DN4F5 electrical characteristics doc id 17739 rev 1 5/12 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 20 v, i d = 7.5 a, r g = 4.7 ?, v gs = 10 v (see figure 13) - 18 45 32 5 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 15 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 60 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 15 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s, v dd = 32 v, tj = 150 c - 30 35 2.2 ns nc a
electrical characteristics STL15DN4F5 6/12 doc id 17739 rev 1 2.1 electrical characteristi cs (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 10 1 0.1 0.01 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 100m s 1 s tj=175c tc=25c s ingle p u l s e 100 am07129v1 i d 15 10 5 0 0 0.4 v d s (v) 0. 8 (a) 0.2 0.6 20 25 5v 4v 6v v g s =10v 3 0 3 5 am071 3 0v1 i d 15 10 5 0 0 4 v g s (v) 8 (a) 2 6 20 25 v d s =0.4v 3 0 3 5 am071 3 1v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0. 8 0 0. 8 5 0.90 0.95 1.00 1.05 125 150 -75 1.10 1.15 am071 3 2v1 r d s (on) 8 .2 7. 8 7.4 7.0 0 i d (a) (mohm) 2 8 .6 v g s =10v 46 8 10 12 14 am071 33 v1
STL15DN4F5 electrical characteristics doc id 17739 rev 1 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =20v i d =15a 25 am071 3 5v1 c 1000 100 10 0.1 10 v d s (v) (pf) 1 ci ss co ss cr ss am071 3 4v1 v g s (th) 1.00 0. 8 0.6 0.4 -50 0 t j (c) (norm) -25 75 25 50 100 125 150 -75 am071 3 6v1 r d s (on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 -75 125 150 0 am071 3 7v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0.4 0.5 0.6 0.7 0. 8 0.9 t j =-55c t j =175c t j =25c 12 14 am071 38 v1
test circuits STL15DN4F5 8/12 doc id 17739 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL15DN4F5 package mechanical data doc id 17739 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and products status are available at: www.st.com . ecopack is an st trademark.
package mechanical data STL15DN4F5 10/12 doc id 17739 rev 1 powerflat? (5x6) double island mechanical data dim mm min typ max a0. 8 00. 83 0. 9 0 a1 0.02 0.05 a 3 0.20 b 0. 3 5 0.40 0.47 d5.00 d1 4.75 d2 4.11 4.21 4. 3 1 e6.00 e1 5.75 e2 3 .51 3 .61 3 .71 e 3 2. 3 2 2.42 2.52 e1.27 l 0.70 0. 8 00. 9 0 l1 0.4 8 0.5 8 0.6 8 8 066 3 12_a
STL15DN4F5 revision history doc id 17739 rev 1 11/12 5 revision history table 9. document revision history date revision changes 02-sep-2010 1 first release
STL15DN4F5 12/12 doc id 17739 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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