t1m5f-a series maximum ratings (tj= 25 unless otherwise noticed) features one-piece, injection-molded package blocking voltage to 600 volts sensitive gate triggering in four trigger modes (quadrants) for all possible combinations of trigge r sources, and especially for circuits that source ga te drives all diffused and glassivated junctions for maximum uniformity of parameters and reliability improved noise immunity (dv/dt minimum of 20 v/msec at 110 ) high surge current of 10 amps pb-free package sensitive gate triacs sillicon bidirectional thyristors triacs 1.0 amperes rms 400 thru 600 volts rating symbol value unit peak repetitive offC state voltage ( t j = -40 to 125 , sine wave, 50 to 60 hz; gate open) v drm , v rrm 400 600 volts on-state rms current full cycle sine wave 50 to 60 hz ( t c = 50 ) i t(rms) 1.0 amp peak non-repetitive surge current full cycle sine wave 60 hz (tj =25 ) i tsm 10.0 amps circuit fusing consideration (t = 8.3 ms) i t 0.60 a s peak gate power ( t 2.0us ,tc = 80 Q ) p gm 5.0 watt average gate power ( tc = 80 , t 8.3 ms ) Q p g(av) 0.1 watt peak gate current ( t 2.0us ,tc = 80 Q ) i gm 1.0 amp peak gate voltage ( t 2.0us ,tc = 80 Q ) v gm 5.0 volts operating junction temperature range t j -40 to +110 storage temperature range tstg -40 to +150 2 2 rev. 3, mar-2007, ktxd11 notice: (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a con stant current source such that the voltage ratings of the devices are exce eded. to-92 (to-226aa) seating plane to-92 (to-226aa) all dimensions in millimeter to-92 dim. min. max. a c d e f g h b 4.45 4.70 5.33 4.32 3.18 4.19 1.39 1.15 2.42 2.66 12.7 ------ 2.04 2.66 3.43 ----- i ----- 2.93 semiconductor lite-on T1M5F400A t1m5f600a 12 3 pin assignment main terminal 1 main terminal 2 gate
rating and characteristic curves t1m5f-a series characteristic symbol value unit thermal resistance - junction to lead - junction to cas e - junction to amb ient rthjl rthjc rthja 60 75 150 / w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 characteristics symbol min typ max unit peak reptitive forward or reverse blocking current t j =25 (vd=rated vdrm and vrrm; gate open) t j =110 i drm i rrm ---- ---- ---- ---- 10 100 ua ua peak forward on-state voltage (i tm= 1a peak @tp 2.0 ms, duty cycle 2%) Q Q v tm ---- ---- 1.9 volts gate trigger current (continuous dc) (v d = 12 vdc; r l = 100 ohms) i gt1 i gt2 i gt3 i gt4 ---- ---- ---- ---- ---- ---- ---- ---- 5.0 5.0 5.0 7.0 ma holding current (v d = 12 v, initiating current = 200 ma, gate open) i h ---- 1.5 10 ma turn-on time (v d = rated vdrm , i tm = 1.0 a pk, i g = 25 ma) tgt ---- 2 ---- us gate trigger voltage (continuous dc) (v d = 12 vdc; r l =100 ohms) v gt1 v gt2 v gt3 v gt4 ---- ---- ---- ---- 0.66 0.77 0.84 0.88 2.0 2.0 2.0 2.5 volts latching current (v d =12v,i g = 10 ma) i l1 i l2 i l3 i l4 ---- ---- ---- ---- 1.6 10.5 1.5 2.5 15 20 15 15 ma gate non-trigger voltage (v d = 12v, r l = 100 ohms , t j =110 ) v gd 0.1 ---- ---- volts critical rate of rise of off-state voltage (v d =rated v drm ,exponential waveform, gate open, t j =110 ) dv/dt 20 60 ---- v/us thermal characteristics electrical characteristics (t c =25 unless otherwise noted) off characteristics on characteristics dynamic characteristics
rating and characteristic curves t1m5f-a series 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 it(rms),rms on-state current (amps) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 p(av), power pissipation (watts) figure 3. power dissipation 0 25 50 75 100 125 ta, ambient temperature( ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 it(rms), rms on-state current(amps) figure 1. rms current deratiing versus ambient temperature 0 25 50 75 100 125 tc, case temperature( ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 it(rms), rms on-state current(amps) figure 2. rms current deratiing versus case temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 vtm, instantaneous on-state voltage (volts) 0.01 0.1 1 10 itm, instantaneous on-state current (amp) figure 4. on-state characteristics tpy. max.
1.00e-1 1.00e+0 1.00e+1 1.00e+2 1.00e+3 1.00e+4 t, time (ms) 0.01 0.1 1 r(t), transent thermal resistance (normalized) figure 5. transient thermal response rating and characteristic curves t1m5f-a series specifications mentioned in this publication are su bject to change without notice. -50 -25 0 25 50 75 100 125 00000000000000000000 tj, junction temperature ( ) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 itsm, peak surge current (amps) figure 8. typical gate trigger voltage versus junction temperature q1 q4 q2 q3 -50 -25 0 25 50 75 100 125 00000000000000000000 tj, junction temperature ( ) 0.1 1.0 10.0 100.0 itsm, peak surge current (amps) figure 7. typical gate trigger current versus junction temperature q1 q4 q2 q3 -50 -25 0 25 50 75 100 125 00000000000000000000 tj, junction temperature ( ) 0.1 1 10 ih, holding current (ma) figure 10. typical holding current versus junction temperature mt2 positive -50 -25 0 25 50 75 100 125 00000000000000000000 tj, junction temperature ( ) 0.1 1 10 100 il, latching current (ma) figure 9. typical latching current versus junction temperature q1 q4 q2 q3 mt2 negative 1 10 100 number of cycles 0 4 8 12 16 itsm, peak surge current (amps) figure 6. maximum allowable surge current cycle t j =25 f= 60mhz
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