advanced power n and p-channel enhancement electronics corp. mode power mosfet low gate charge n-ch bv dss 30v fast switching performance r ds(on) 130m surface mount package i d 2.4a p-ch bv dss -30v r ds(on) 250m description i d -1.8a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage 20 20 v i d @t a =25 continuous drain current 3 2.4 -1.8 a i d @t a =70 continuous drain current 3 1.9 -1.4 a i dm pulsed drain current 1 10 -10 a p d @t a =25 total power dissipation 1.14 w linear derating factor 0.01 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 thermal data symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 110 /w data and specifications subject to change without notice parameter 201018074-1/7 AP2532GY rohs-compliant product g2 d2 s2 g1 d1 s1 d1 s1 g1 s2 g2 d2 sot-26 a dvanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-26 package is widely used for commercial surface mount applications.
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =1a - - 130 m , source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.9a, v gs =0v - - 1.3 v t rr reverse recovery time i s =1.8a, v gs =0v - 16 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc 2/7 AP2532GY
ap2532g y p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance v gs =-10v, i d =-0.6a - - 250 m , source-drain diode symbol parameter test conditions min. typ. max. unit v sd forward on voltage 2 i s =-0.9a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-1.2a, v gs =0v, - 14 - ns q rr reverse recovery charge di/dt=100a/s - 6 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t< 5sec ; 180 3/7 this product has been qualified for consumer market. applications or uses as criterial component in life support
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4/7 AP2532GY 0 2 4 6 8 10 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10 v 7.0 v 5.0 v 4.5 v v g = 3.0 v 0 2 4 6 8 10 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c v g = 3.0 v 10 v 7.0 v 5.0 v 4.5 v 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =1a v g =10v 0 1 2 3 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 70 90 110 130 150 170 190 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d = 0.5 a t a =25 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
ap2532g y n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 5/7 q v g 4.5v q gs q gd q g charge 0 3 6 9 12 15 0123456 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 1.8 a v ds =10v 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) 0.02 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 180
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6/7 AP2532GY 0 2 4 6 8 10 0246 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c v g = - 3.0 v -10v - 7.0 v - 5.0 v - 4.5 v 0.6 0.9 1.2 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -0.6 a v g = -10 v 0.0 0.5 1.0 1.5 2.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 2 4 6 8 10 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v - 7.0 v - 5.0 v -4.5 v v g = - 3.0 v 120 160 200 240 280 320 360 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = - 0.3 a t a =25 o c 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
ap2532g y p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7/7 0 3 6 9 12 15 0123456 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -1.2a v ds = -10v 10 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse q v g -4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 180
package outline : sot-26 millimeters symbols min nom max a 2.70 2.90 3.10 b 2.60 2.80 3.00 c 1.40 1.60 1.80 d 0.30 0.43 0.55 e 0.00 0.05 0.10 g i j l 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : sot-26 0.37ref 0.95ref 1.90ref advanced power electronics corp. 0.12ref h 1.20ref yexx part numbe r d date code c b l l g e j i a h
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