1 dual n-channel 20 v (d-s) mosfet features ? halogen-free acc ording to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 1 00 % r g tested ? t ypical esd protection 2100 v hbm ? compliant to rohs directive 2002/95/ec applications ? load swi tch for portable applications notes: a. package limited. b. surfac e mou nted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady stat e conditions is 220 c/w. product summary v ds (v) r ds(on) ( )i d (a) a q g (typ.) 20 0.198 at v gs = 4.5 v 1.3 a 0.9 nc 0.225 at v gs = 2.5 v 1.3 a 0.263 at v gs = 1.8 v 1.3 a sot-363 sc-70 (6-leads) 6 4 1 2 3 5 to p v ie w s 1 g 1 d 2 d 1 g 2 s 2 d 1 s 1 g 1 d 2 s 2 g 2 absolute maximum ratings (t a = 25 c , unless otherwise noted) p arameter symb ol lim it unit drain-source voltage v ds 20 v gate-source vo ltage v gs 8 continuous dr ain current (t j = 150 c) t c = 25 c i d 1.3 a a t c = 70 c 1.3 a t a = 25 c 1.3 a, b , c t a = 70 c 1.2 b, c pulsed drain cu rrent i dm 4 contin uous source-dr ain diode cu rrent t c = 25 c i s 1 t a = 25 c 0.61 b, c max imu m p ower dissipation t c = 25 c p d 1.25 w t c = 70 c 0.8 t a = 25 c 0.74 b, c t a = 70 c 0.47 b, c operating j unction and storage temperature range t j , t stg - 55 to 150 c thermal resistance rati ngs parameter symbol typ ical maximum unit maximum junction-to-ambient b, d t 5 s r thj a 130 170 c/w maxim um j unction-to-foot (drain) steady state r thjf 80 100 dt 6 www.din-tek.jp
2 notes : a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses be yond t hose listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parame ter symb ol test conditions min. typ. max. unit static drain-source breakdo wn volta ge v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 20 mv/c v gs(th) temperature coefficient v gs(th) /t j - 2.3 gate-source thresho l d voltage v gs(th) v ds = v gs , i d = 250 a 0.4 1 v gate-s o urce leakage i gss v ds = 0 v, v gs = 8 v 25 a v ds = 0 v, v gs = 4.5 v 1 z ero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state dr ain current a i d(on ) v ds 5 v, v gs = 4.5 v 4 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1 a 0.165 0.198 v gs = 2.5 v, i d = 1 a 0.187 0.225 v gs = 1.8 v, i d = 0.2 a 0.210 0.263 f orw ard transconductance a g fs v ds = 4 v, i d = 1.5 a 4 s dynamic b total gate charge q g v ds = 10 v , v gs = 8 v , i d = 1.5 a 1.6 2 .5 nc v ds = 10 v , v gs = 4.5 v , i d = 1.5 a 0.9 1.8 gate-s o u rce charge q gs 0.1 gate- dr a in charg e q gd 0.2 gate resi sta nce r g f = 1 mhz 0.4 1.9 3.8 k tu r n - o n d e l ay t i m e t d(on) v dd = 10 v , r l = 8.3 i d ? 1.2 a, v gen = 4.5 v, r g = 1 43 65 ns rise time t r 80 120 turn -off dela y time t d(off) 480 720 fall t ime t f 220 330 turn -on de lay time t d(on) v dd = 10 v, r l = 8.3 i d ? 1.2 a, v gen = 8 v, r g = 1 22 33 rise time tr 46 70 tur n -off delay time t d(off) 645 968 fall ti me tr 215 323 drain-sour ce b ody diode characteristics continuous source-drain diode current i s t c = 25 c 1 a pulse diode f orw ard current i sm 4 body diode v oltage v sd i s = 1.2 a, v gs = 0 v 0.8 1.2 v body diode re verse recovery time t rr i f = 1.2 a, di/dt = 100 a/s , t j = 25 c 918 n s body diode reverse recovery charge q rr 24nc rev e rse recovery fall time t a 5 ns re verse recove ry rise time t b 4 dt 6 www.din-tek.jp
3 typica l c har ac teri stics (25 c, unless otherwise noted) gate current v s . gate-to-source voltage output characteristics on-resistance vs. drain current v gs - gate-to-source voltage (v) i g - gate current (ma) 0 0.1 0.2 0.3 0.4 0.5 0369121 5 t j = 25 c 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 v gs =5vthru2v v gs =1.5v v gs =1v v ds - drain-to-source voltage (v) i d - drain current (a) 0.13 0.16 0.19 0.22 0.25 01234 v gs =1.8v v gs =2.5v v gs =4.5v r ds(on) - on-resistance () i d - drain current (a) gate current vs. gate-to-source v o ltage transfer characteristics gate charge 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 0369121 5 v gs - gate-to-source voltage (v) i g - gate current (a) t j = 150 c t j = 25 c 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.3 0.6 0 .9 1.2 1.5 t c = 125 c t c = 25 c t c = - 55 c v gs - gate-to-source voltage (v) i d - drain current (a) 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 i d =1.5 a v ds =10v v ds =16v v ds =5v q g - total gate charge (nc) v gs - gate-to-source voltage (v) dt 6 www.din-tek.jp
4 ty pi cal ch ara cteristics (25 c, unless otherwise noted) on-resistance vs. ju nction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 i d =1a v gs =4.5v v gs =2.5 v t j - junction temperature (c) (normalized) r ds(on) - on-resistance 0.0 0.1 0.2 0.3 0.4 12345 t j = 25 c t j = 125 c i d =1a r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 0 1 5 power (w) time (s) 3 4 00 6 11 0 0.1 0.01 2 100 source-dra in dio de forward voltage threshold voltage safe operating area, junction-to-ambient 0.0 0.3 0.6 0 .9 1.2 1.5 1 0.1 10 t j = 25 c t j = 150 c i s - source current (a) v sd - source-to-drain voltage (v) 0.20 0.35 0.50 0.65 0.80 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v gs(th) (v) t j - temperature (c) 10 0.1 0.1 1 10 1 t a = 25 c single pulse 1ms 0.01 1s,10s dc 100 limited by r ds (on) * 10 ms 100 ms 100 s bvdss limited v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified i d - drain current (a) dt 6 www.din-tek.jp
5 typica l c har ac teri stics (25 c, unless otherwise noted) * the power dissipat ion p d is based on t j(max) = 150 c, using junctio n-to-case th ermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 0.6 1.2 1.8 2.4 0 25 50 75 100 125 150 package limited t c - case temperature (c) i d - drain current (a) power, juncti on- to-foot 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t f - case temperature (c) power (w) power, junctio n -to-ambient 0.00 0.15 0.30 0.45 0.60 0.75 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w) dt 6 www.din-tek.jp
6 ty pi cal ch ara cteristics (25 c, unless otherwise noted) . norm alized th erma l transi ent im pedance, junction-to-ambient 10 -3 10 -2 00 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 170 c/w 3. t jm - t a = p dm z thja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.02 normalized therm al tran sient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 squ are w a v e pu lse du ration (s) n ormalized effecti v e tr ansient thermal impedance 0.02 dt www.din-tek.jp
l b c e e 1 e d e 1 a 2 a a 1 12 0.08 c 3 1
dim min nom max min nom max a 0.90 C 1.10 0.035 C 0.043 a 1 C C 0.10 C C 0.004 a 2 0.80 C 1.00 0.031 C 0.039 b 0.25 C 0.40 0.010 C 0.016 c 0.10 C 0.25 0.004 C 0.010 d 1.80 2.00 2.20 0.071 0.079 0.087 e 1.80 2.10 2.40 0.071 0.083 0.094 e 1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65bsc 0.026bsc e 1 1.20 1.30 1.40 0.047 0.051 0.055 l 0.10 0.20 0.30 0.004 0.008 0.012 7 nom 7 nom ecn: s-03946rev. c, 09-jul-01 dwg: 5549 package information www.din-tek.jp
1 application note recommended minimum pads for sc -70: 3-lead 0.022 (0.559) 0.096 (2.438) recommended mi nimum pads dimensions in inches/(mm) 0.025 (0.622) 0.027 (0.686) 0.071 (1.803) 0.045 (1.143) 0.026 (0.648) return to index return to inde x application note www.din-tek.jp
1 disclaimer all prod uct, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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