lb c873, lv c873, lt c873 hyper mini sideled ? hyper-bright led vorl?ufige daten / preliminary data 2000-03-01 1 opto semiconductors besondere merkmale ? geh?usetyp: wei?es smt geh?use ? besonderheit des bauteils: kleine bauform mit extrem breiter abstrahlcharakteristik; ideal fr einkopplungen in lichtleiter ? wellenl?nge: 470 nm (blau), 505 nm (verde), 528 nm (true green) ? abstrahlwinkel: lambertscher strahler (120) ? technologie: ingan ? optischer wirkungsgrad: 2 lm/w (blau), 6 lm/w (verde), 8 lm/w (true green) ? gruppierungsparameter: lichtst?rke ? verarbeitungsmethode: fr alle smt-bestcktechniken geeignet ? l?tmethode: ir reflow l?ten ? vorbehandlung: nach jedec level 2 ? gurtung: 8 mm gurt mit 2000/rolle, ?180 mm oder 8000/rolle, ?330 mm ? esd-festigkeit: esd-sicher bis 2 kv nach mil std 883 d, method 3015.7 anwendungen ? signalindikatoren ? hinterleuchtung (lcd, handy, schalter, tasten, displays, werbebeleuchtung, allgemeinbeleuchtung) ? einkopplung in lichtleiter features ? package: white smt package ? feature of the device: small package with extremely wide viewing angle; ideal for coupling in light guides ? wavelength: 470 nm (blue), 505 nm (verde), 528 nm (true green) ? viewing angle: lambertian emitter (120) ? technology: ingan ? optical efficiency: 2 lm/w (blue), 6 lm/w (verde), 8 lm/w (true green) ? grouping parameter: luminous intensity ? assembly methods: suitable for all smt assembly methods ? soldering methods: ir reflow soldering ? preconditioning: acc. to jedec level 2 ? taping: 8 mm tape with 2000/reel, ?180 mm or 8000/reel, ?330 mm ? esd-withstand voltage: up to 2 kv acc. to mil std 883 d, method 3015.7 applications ? signaling applications ? backlighting (lcd, cellular phones, switches, keys, displays, illuminated advertising, general lighting) ? coupling into light guides
2000-03-01 2 opto semiconductors lb c873, lv c873, lt c873 helligkeitswerte werden mit einer stromeinpr?gedauer von 25 ms und einer genauigkeit von 11 % ermittelt. luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. -1 farbselektiert nach wellenl?ngengruppen (siehe seite 4). -1 color selection acc. to wavelength groups (see page 4). typ type emissions- farbe color of emission farbe der lichtaustritts- fl?che color of the light emitting area lichtst?rke luminous intensity i f = 20 ma i v (mcd) lichtstrom luminous flux i f = 20 ma f v (mlm) bestellnummer ordering code lb c873-l1m1-1 lb c873-m1n1-1 lb c873-l1 lb c873-l2 lb c873-m1 lb c873-m2 lb c873-n1 blue colorless clear 11.2 ... 22.4 18.0 ... 35.5 11.2 ... 14.0 14.0 ... 18.0 18.0 ... 22.4 22.4 ... 28.0 28.0 ... 35.5 50.4 (typ.) 80.3 (typ.) 37.8 (typ.) 48.0 (typ.) 60.6 (typ.) 75.6 (typ.) 95.3 (typ.) on request on request lv c873-n1p1-1 lv c873-p1q1-1 lv c873-n1 lv c873-n2 lv c873-p1 lv c873-p2 lv c873-q1 verde colorless clear 28.0 ... 56.0 45.0 ... 90.0 28.0 ... 35.5 35.5 ... 45.0 45.0 ... 56.0 56.0 ... 71.0 71.0 ... 90.0 126.0 (typ.) 202.5 (typ.) 95.3 (typ.) 120.8 (typ.) 151.5 (typ.) 190.5 (typ.) 241.5 (typ.) on request on request lt c873-n2p2-1 lt c873-p2q2-1 lt c873-n2 lt c873-p1 lt c873-p2 lt c873-q1 lt c873-q2 true green colorless clear 35.5 ... 71.0 56.0 ... 112.0 35.5 ... 45.0 45.0 ... 56.0 56.0 ... 71.0 71.0 ... 90.0 90.0 ... 112.0 159.8 (typ.) 252.0 (typ.) 120.8 (typ.) 151.5 (typ.) 190.5 (typ.) 241.5 (typ.) 303.0 (typ.) on request on request
lb c873, lv c873, lt c873 2000-03-01 3 opto semiconductors grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebstemperatur operating temperature range t op C 40 + 100 c lagertemperatur storage temperature range t stg C 40 + 100 c sperrschichttemperatur junction temperature t j + 125 c durchla?strom forward current i f 20 ma sto?strom surge current t 10 m s, d = 0.005 i fm t.b.d. a sperrspannung reverse voltage v r 5v leistungsaufnahme power dissipation t a 25 c p tot 85 mw w?rmewiderstand thermal resistance sperrschicht/umgebung junction/ambient sperrschicht/l?tpad junction/solder point montage auf pc-board fr 4 (padgr??e 3 16 mm 2 ) mounted on pc board fr 4 (pad size 3 16 mm 2 ) r th ja r th js 530 250 k/w k/w
2000-03-01 4 opto semiconductors lb c873, lv c873, lt c873 1) wellenl?ngengruppen / wavelength groups kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol werte values einheit unit lb lv lt wellenl?nge des emittierten lichtes (typ.) wavelength at peak emission i f = 20 ma l peak 465 503 523 nm dominantwellenl?nge 1) (typ.) dominant wavelength 1) i f = 20 ma l dom 470 7 505 8 528 10 nm spektrale bandbreite bei 50 % i rel max (typ.) spectral bandwidth at 50 % i rel max i f = 20 ma dl 25 30 33 nm abstrahlwinkel bei 50 % i v (vollwinkel) (typ.) viewing angle at 50 % i v 2 j 120 120 120 grad deg. durchla?spannung (typ.) forward voltage (max.) i f = 20 ma v f v f 3.5 4.2 3.3 4.2 3.3 4.2 v v sperrstrom (typ.) reverse current (max.) v r = 5 v i r i r 0.01 10 0.01 10 0.01 10 m a m a temperaturkoeffizient von l peak (typ.) temperature coefficient of l peak i f = 20 ma tc l peak 0.04 0.03 0.04 nm/k temperaturkoeffizient von l dom (typ.) temperature coefficient of l dom i f = 20 ma tc l dom 0.02 0.02 0.03 nm/k temperaturkoeffizient von v f (typ.) temperature coefficient of v f i f = 20 ma tc v C 2.9 C 3.2 C 3.6 mv/k optischer wirkungsgrad (typ.) optical efficiency i f = 20 ma h opt 268lm/w gruppe group blue verde true green wellenl?ngengruppen werden mit einer stromeinpr?gedauer von 25 ms und einer genauigkeit von 1 nm ermittelt. min. max. min. max. min. max. 3 464 468 498 503 519 525 wavelength groups are tested at a current pulse duration of 25 ms and an accuracy of 1 nm. 4 468 472 503 507 525 531 5 472 476 507 512 531 537
lb c873, lv c873, lt c873 2000-03-01 5 opto semiconductors relative spektrale emission i rel = f ( l ), t a = 25 c, i f = 20 ma relative spectral emission v( l ) = spektrale augenempfindlichkeit standard eye response curve abstrahlcharakteristik i rel = f ( j ) radiation characteristic 0 400 true green 550 450 500 600 650 nm l 700 ohl00492 i 20 40 60 80 % 100 rel verde blue l v 0 0.2 0.4 1.0 0.8 0.6 j 1.0 0.8 0.6 0.4 0? 10? 20? 40? 30? ohl01660 50? 60? 70? 80? 90? 100? 0? 20? 40? 60? 80? 100? 120?
lb c873, lv c873, lt c873 2000-03-01 6 opto semiconductors durchla?strom i f = f ( v f ) forward current t a = 25 c maximal zul?ssiger durchla?strom i f = f ( t ) max. permissible forward current relative lichtst?rke i v / i v(20 ma) = f ( i f ) relative luminous intensity t a = 25 c maximal zul?ssiger durchla?strom i f = f ( t ) max. permissible forward current ohl00495 10 -1 2.5 3 3.5 4 4.5 v 5 0 10 1 10 10 2 5 5 ma 5 2 true green verde, blue i f v f ohl01146 0 0 ?c ma 5 10 15 20 25 30 20 40 60 80 100 estimated average degradation d = -50% v i f i t temp. ambient t a blue verde, true green ohl00494 10 -2 -1 10 0 10 10 1 5 5 -1 10 10 0 10 1 10 ma 2 i f v v (20 ma) i i ohl01147 0 0 20 40 60 80 ?c 100 t i f 5 10 15 20 25 30 ma estimated average degradation = -50% i d v temp. solder point s t verde, blue true green
lb c873, lv c873, lt c873 2000-03-01 7 opto semiconductors relative lichtst?rke i v / i v(25 c) = f ( t a ) relative luminous intensity i f = 20 ma dominante wellenl?nge l dom = f ( i f ) dominant wavelength lb , t a = 25 c dominante wellenl?nge l dom = f ( i f ) dominant wavelength lv , t a = 25 c dominante wellenl?nge l dom = f ( i f ) dominant wavelength lt , t a = 25 c ohl00870 0 -10 v v (25 ?c) i i ?c v a t 10 30 50 70 100 0.2 0.4 0.6 0.8 1.2 i ohl00500 469.0 dom l 0 f 10 20 30 40 ma 50 469.5 470.0 470.5 471.0 471.5 472.5 nm blue i ohl00503 502 dom l 0 f 10 20 30 40 ma 50 503 504 505 506 507 508 509 510 511 nm verde i ohl00882 521 dom l 0 f 10 20 30 40 ma 50 523 525 527 529 531 533 535 537 nm 541 true green 539
2000-03-01 8 opto semiconductors lb c873, lv c873, lt c873 ma?zeichnung package outlines ma?e werden wie folgt angegeben: mm (inch) / dimensions are specified as follows: mm (inch). kathodenkennung: abgeschr?gte ecke cathode mark: bevelled edge gply6930 5.8 (0.228) 5.4 (0.213) 0.8 (0.031) 1.2 (0.047) 1.6 (0.063) 1.2 (0.047) cathode 0.4 (0.016) 0.6 (0.024) 0...0.1 (0.004) 4.2 (0.165) 4.6 (0.181) 1.8 (0.071) 1.5 (0.059) (0.8 (0.031)) 0.20 (0.008) 0.25 (0.010) (0.6 (0.024))
lb c873, lv c873, lt c873 2000-03-01 9 opto semiconductors l?tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 ir-reflow l?tprofil (nach ipc 9501) ir reflow soldering profile (acc. to ipc 9501) ohly0597 0 0 50 100 150 200 250 50 100 150 200 250 300 t t ?c s 240-245 ?c 10-40 s 183 ?c 120 to 180 s defined for preconditioning: up to 6 k/s ramp-down rate up to 6 k/s ramp-up rate up to 6 k/s defined for preconditioning: 2-3 k/s
2000-03-01 10 opto semiconductors lb c873, lv c873, lt c873 empfohlenes l?tpaddesign ir reflow l?ten recommended solder pad ir reflow soldering gurtung / polarit?t und lage verpackungseinheit 2000/rolle, ?180 mm oder 8000/rolle, ?330 mm method of taping / polarity and orientation packing unit 2000/reel, ?180 mm or 8000/reel, ?330 mm ohlp0981 6.6 6.6 1.2 1.2 1.2 1.2 for improved heat dissipation cu-area > 16 mm cu-fl?che > 16 mm w?rmeableitung fr verbesserte padgeometrie paddesign 2 2 solder resist l?tstopplack oha00226 a c 4 1.5 1.8 6 5.5 1.75 12 2 4
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