document 12205 rev. a revision date: 9/3/08 1 high power melf pin diodes series mmp7072-127-1, MMP7076-127-1, mmp7080-127-1 description the mmp7072-127-1, MMP7076-127-1, mmp7080-127-1 melf pin diode family is manufactured using aeroflex/metelics proprietary diode process which optimizes the anode and cathode bonding area of the diode to the adjacent heat spreading metal posts within the ceramic package. this unique geometry provides lower electrical and thermal resistance within the surface mount package to provide higher average power performance to comparable surface mount diode packages. with lower thermal resistance ( < 20 oc/w ), rf c.w. incident power levels of + 50 dbm and rf peak incident power levels of + 60 dbm are very achievable in higher power uhf cold switching applications. the low series resistance (< 0.8 ), coupled with the longer minority carrier lifetime, ( > 3 s ), provides better iip3 distortion values > + 70 dbm, for sp2t tx-rx switches. these devices are hermetically sealed and are constructed with non-magnetic materials to meet stringent requirements for mri systems. the devices are fully rohs compliant. applications the mmp7072-127-1, MMP7076-127-1 , mmp7080-127-1 melf pin diode family is designed to be used in higher power switch and attenuator applications, operating from 1 mhz to 1 ghz. these devices are durable, reliable, and are capable of meeting all military, commercial, and industrial applications. environmental capabilities the mmp7072-127-1, MMP7076-127-1 , and mmp7080-127-1 melf pin diodes are capable of meeting the environmental requirements of mil-std-750. esd rating pin diodes are susceptible to esd conditions as with all semiconductors. the esd rating for these devices is class 1a, hbm. case style 127-1 features ? higher average power handling: >100 watts cw ? higher voltage rating: >600 volts ? lower rs: <0.8 (lower insertion loss & higher iip3) ? lower thermal resistance: <20 c / w for higher power ? ceramic surface mount package ? rohs compliant ? hermetically sealed
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 9/1/08 2 parameter symbol units test conditions minimum typical maximum value value value voltage breakdown -vb volts | - 10 a | @ dc | - 100 | | - 600 | (see note 1) forward voltage vf volts + 100 ma @ dc 0.85 1.0 reverse leakage current - ir a | 80 % min vb | @ dc | -100 | | -1000 | series resistance rs + 100 ma @ 100 m h z 0. 5 0. 8 parallel resistance rp k - 100 v @ 100 m h z 200 250 capacitance ct pf -100 v @ 1 mhz 0.62 0.70 minority carrier lifetime tl s ( 50% control C 90 % 3 4.5 6 output voltage) if =+10 ma /-ir =- 6 ma f = 1 khz c.w. thermal resistance o c / w i h = 1a , i l = 10 ma 15 20 absolute maximum ratings @ t a = + 25 oc ( unless otherwise defined ) parameter absolute maximum value forward current 1000 ma reverse voltage | -700 | v (see electrical specification note 1) forward voltage 1.2 v @ 100 ma operating temperature - 65 oc to + 125 oc storage temperature - 65 oc to + 150 oc junction temperature + 175 oc total dissipated rf & d.c. power 3w @ + 25 oc ( diode case in air ambient ) de-rate linearly at -20 mw / oc to 0 w @ + 175 oc total dissipated rf & d.c. power 7.5 w @ + 25 oc ( diode case at thermal ground ) de-rate linearly at -50 mw / oc to 0 w @ + 175 oc assembly temperature + 310 oc for 10 seconds mmp7072-127-1, MMP7076-127-1, mmp7080-127-1 electrical specifications @ ta = + 25 oc ( unless otherwise defined ) electrical specification notes: 1. minimum vb values are as follows: mmp7072-127-1 > | -100 v | , MMP7076-127-1 > | -200 v | , mmp7080-127-1 > | -600 v | 2. series resistance, ( rs ) and parallel resistance ( rp ) are measured on the hp 4291 impedance analyzer. 3. total capacitance, ( ct ) is the summation of the diode junction capacitance, ( cj ), and the package capacitance, cpkg. high power melf pin diodes
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 9/1/08 3 circuit pad layout for mmp7072-127-1 melf pin diode high power melf pin diodes 0.105 in ( 2.67 mm ) 0.045 in ( 1.14 mm ) 0.065 in ( 1.65 mm ) assembly instructions the melf pin diodes are capable of being placed onto circuit boards with pick and place manufacturing equipment from tape-reel dispensing. the devices are attached to the circuit using conventional solder re-flow or wave soldering procedures with rohs type or sn 63 / pb 37 type solders. outline drawing case style 127-1 outline b c a square cathode mark electrodes symbol + _ dimension a dimension b dimension c inches ( mm ) inches ( mm ) inches ( mm ) 0.088 +/- 0.007 0.125+/- 0.010 0.020 typ ( 2.24 +/- 0.18 ) ( 3.18 +/- 0.25) ( 0.51 ) notes: 1. anode and cathode electrodes are electroplated as follows: minimum 70 u in cu, followed by 100 u in minimum sn per mil-c-14550, type i.
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 9/1/08 4 rf performance high power melf pin diodes mmp7072, mmp7076, mmp7080-127-1 para llel resistance vs reversevoltage 10 100 0.0 10.0 20.0 30.0 40.0 reverse voltage ( v ) ) s m h o k ( p r rp_ 1 ghz rp_1.8 ghz mmp7072, mmp7076, mmp7080-127-1 capacitance vs reverse voltage 0.500 0.520 0.540 0.560 0.580 0.600 0.620 0.640 0.660 0.680 0.700 0 5 10 15 20 25 30 35 40 reverse voltage ( v ) ) f p ( t c ct_100 mhz ct_1 ghz ct_1.8 ghz
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 9/1/08 5 high power melf pin diodes mmp7072, mmp7076, mmp7080-127 -1 forward series resistance @ 100 ma vs frequency 0.00 0.20 0.40 0.60 0.80 1.00 100 200 300 400 500 600 700 800 900 1000 f(mhz) ) s m h o ( s r rs vs f_100 ma mmp7072, mmp7076, mmp7080-127-1 forward series resistance vs current 0.1 1.0 10.0 100.0 1000.0 0.0 0.1 1.0 10.0 100.0 i ( ma ) ) s m h o ( s r rs_100 mhz rs_1 ghz
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 9/1/08 6 high power melf pin diodes mmp7072, mmp7076, mmp7080-127-1 impedance vs frequency at 100 ma 0.20 0.40 0.60 0.80 1.00 1.20 1.40 030060090012001500 f ( mhz ) ) s m h o ( z z vs f_100 ma mmp7072, mmp7076, mmp7080-127-1 ls vs frequency at 100 ma 0.00 0.05 0.10 0.15 0.20 0.25 0.30 100 440 780 1120 1460 1800 f ( mhz ) ) h n ( s l ls vs f_100 ma
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 9/1/08 7 high power melf pin diodes mmp7072, mmp7076, mmp7080-127-1 admittance vs frequency @ -40v 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 0 150 300 450 600 750 900 1050 1200 1350 1500 f ( mhz ) ) s m ( y y vs f_-40v
our passion for performance is defined by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused. revision date: 9/1/08 aeroflex / metelics, inc. east coast operations 54 grenier field road, londonderry, nh 03053 tel: (603) 641-3800 sales: (888) 641-semi (7364) fax: (603)-641-3500 west coast operations 975 stewart drive, sunnyvale, ca 94085 tel: (408) 737-8181 fax: (408) 733-7645 aeroflex / metelics, inc. reserves the right to make changes to any products and services herein at any time without notice. consult aeroflex or an author- ized sales representative to verify that the information in this data sheet is cur- rent before using this product. aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by aeroflex; nor does the purchase, lease, or use of a product or service from aeroflex con- vey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of aeroflex or of third parties. copyright 2008 aeroflex / metelics. all rights reserved. www.aeroflex.com/metelics metelics-sales@aeroflex.com is o 9001:2000 cpkg = 0.25 pf cj = ct - cpkg ls = 0.18 nh rf in rf out rs or rp device model parameter description value unit is saturation current 1.0 e-14 amps vi i-region forward bias voltage drop 0.00 volts bv breakdown voltage 600 volts un electron mobility 900 cm2/v-s wi i C region width 1.25 e-4 meters rr i-region 0v bias resistance 1.0 e+4 cmin pin punchthrough capacitance 3.5 e-13 farads tau am bipolar i-region lifetime 4.5 e-6 sec rs ohmic resistance 0.8 cj0 junction capacitance @ 0v 3.7 e-13 farads vj junction potential 0.70 volts m grading coefficient 1.0 none kf flicker noise coefficient 0 none af flicker noise exponent 1.0 none fc forward bias depletion capacitance coefficient 0.5 none ffe flicker noise frequency exponent 1.0 none
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