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www.irf.com 1 08/17/07 irf6618pbf irf6618trpbf applicable directfet package/layout pad (see p.7, 8 for details) sq sx st mq mx mt fig 1. typical on-resistance vs. gate-to-source voltage fig 2. total gate charge vs. gate-to-source voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.75mh, r g = 25 ? , i as = 24a. v dss v gs r ds(on) r ds(on) 30v max 20v max 2.2m ? @ 10v 3.4m ? @ 4.5v directfet isometric ab so l ute m ax i mum r at i ngs parameter units v ds drain-to-source volta g e v v gs gate-to-source volta g e i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, vgs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 210 24 max. 30 24 240 20 30 170 directfet power mosfet rohs compliant lead-free (qualified up to 260c reflow) application specific mosfets ideal for cpu core dc-dc converters low conduction losses high cdv/dt immunity low profile (<0.7mm) dual sided cooling compatible compatible with existing surface mount techniques description the irf6618pbf combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection sol dering techniques. application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allow s dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the irf6618pbf balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductan ce to reduce both conduction and switching losses. the reduced losses make this product ideal for high frequency/high efficiency dc-d c converters that power high current loads such as the latest generation of microprocessors. the irf6618pbf has been optimized fo r parameters that are critical in synchronous buck converter?s syncfet sockets. q g tot q gd q gs2 q rr q oss v gs(th) 43nc 15nc 4.0nc 46nc 28nc 1.64v 0 102030405060 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 24a 2 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 t y p i c a l r d s ( o n ) ( m ? ) i d = 30a t j = 25c t j = 125c

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 23 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 1.7 2.2 m ? ? v gs(th) / ? t j gate threshold voltage coefficient ??? -5.7 ??? mv/c ??? ??? 5.0 i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 100 ??? ??? s q g total gate charge ??? 43 65 q gs1 pre-vth gate-to-source charge ??? 12 ??? q gs2 post-vth gate-to-source charge ??? 4.0 ??? nc q gd gate-to-drain charge ??? 15 23 q godr gate charge overdrive ??? 12 ??? see fig. 14 q sw switch charge (q gs2 + q gd ) ???19??? q oss output charge ??? 28 ??? nc r g gate resistance ??? 1.0 2.2 ? t d(on) turn-on delay time ??? 21 ??? t r rise time ???71??? t d(off) turn-off delay time ??? 27 ??? ns t f fall time ??? 8.1 ??? c iss input capacitance ??? 5640 ??? c oss output capacitance ??? 1260 ??? pf c rss reverse transfer capacitance ??? 570 ??? diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 89 (body diode) a i sm pulsed source current ??? ??? 240 ( bod y diode ) v sd diode forward voltage ??? 0.78 1.2 v t rr reverse recovery time ??? 43 65 ns q rr reverse recovery charge ??? 46 69 nc i d = 24a v gs = 0v v ds = 15v i d = 24a t j = 25c, i f = 24a di/dt = 100a/s see fig. 17 t j = 25c, i s = 24a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 30a v gs = 4.5v, i d = 24a v ds = v gs , i d = 250a v ds = 24v, v gs = 0v v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 150c v gs = 20v v gs = -20v v gs = 4.5v mosfet symbol clamped inductive load v ds = 15v, i d = 24a conditions see fig. 15 & 16 ? = 1.0mhz v ds = 15v, v gs = 0v v dd = 15v, v gs = 4.5v v ds = 15v
www.irf.com 3 absolute maximum ratin g s parameter units p d @t a = 25c power dissipation p d @t a = 70c power dissipation w p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter t y p. max. units r ja junction-to-ambient ??? 45 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 1.4 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c max. 0.022 -40 to + 150 2.8 270 1.8 89 used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink.
r is measured at t j of approximately 90c. surface mounted on 1 in. square cu (still air). with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) fig 3. maximum effective transient thermal impedance, junction-to-ambient 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 0.6784 0.00086 17.299 0.57756 17.566 8.94 9.4701 106 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4
4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 10v 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60s pulse width fig 8. typical capacitance vs. drain-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss
www.irf.com 5 fig 9. typical source-drain diode forward voltage fig 10. maximum safe operating area fig 12. threshold voltage vs. temperature fig 11. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 0 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t c = 25c tj = 150c single pulse 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 i d , d r a i n c u r r e n t ( a ) fig 13. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.3a 11a bottom 24a
6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 14a. gate charge test circuit fig 14b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 15b. unclamped inductive waveforms t p v (br)dss i as fig 15a. unclamped inductive test circuit fig 16b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 16a. switching time test circuit v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v
www.irf.com 7 fig 17. for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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directfet substrate and pcb layout, mt outline (medium size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source g d dd d s s
8 www.irf.com directfet part marking directfet outline dimension, mt outline (medium size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. max 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.0274 0.0031 0.007 min 6.25 4.80 3.85 0.35 0.78 0.88 1.78 0.98 0.63 0.88 2.46 0.616 0.020 0.08 max 6.35 5.05 3.95 0.45 0.82 0.92 1.82 1.02 0.67 1.01 2.63 0.676 0.080 0.17 min 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.0235 0.0008 0.003 code a b c d e f g h j k l m r p dimensions metric imperial
www.irf.com 9 directfet tape & reel dimension (showing component orientation) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2007 standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6618trpbf). for 1000 parts on 7" reel, order IRF6618TR1PBF min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 code a b c d e f g h max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 dimensions metric imperial loaded tape feed direction

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