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data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1990, 2001 document no. p11434ej6v0ds00 (6th edition) date published march 2001 ns cp(k) printed in japan photocoupler ps2532-1,-2,-4,ps2532l-1,-2,-4 high collector to emitter voltatge high isolation voltage multi photocoupler siries the mark ? ? ? ? shows major revised points. - nepoc tm series - description the ps2532-1, -2, -4 and ps2532l-1, -2, -4 are optically coupled isolators containing a gaas light emitting diode and an npn silicon darlington connected phototransistor. the ps2532-1, -2, -4 are in a plastic dip (dual in-line package) and the ps2532l-1, -2, -4 are lead bending type (gull-wing) for surface mount. features ? high collector to emitter voltage (v ceo = 300 v) ? high isolation voltage (bv = 5 000 vr.m.s.) ? high current transfer ratio (ctr = 4 000 % typ.) ? high-speed switching (t r, t f = 100 m s typ.) ? ordering number of tape product: ps2532l-1-e3, e4, f3, f4, ps2532l-2-e3, e4 ? safety standards ? ul approved: file no. e72422 (s) ? bsi approved: no. 8221/8222 ? csa approved: no. ca 101391 ? nemko approved: no. p98101708 ? semko approved: no. 9824187/01-02 ? demko approved: no. 307863 ? fimko approved: no. f1 11397 ? vde0884 approved (option) applications ? telephone, exchange equipment ? fax/modem
data sheet p11434ej6v0ds 2 ps2532-1,-2,-4,ps2532l-1,-2,-4 package dimensions (unit : mm) dip type (new package) ps2532-1 top view 3.50.3 4.150.4 3.20.4 2.54 1.250.15 0.500.10 0.25 m 4.60.35 6.5 +0.7 C0.5 0 to 15? 7.62 0.25 +0.1 C0.05 12 43 1. anode 2. cathode 3. emitter 4. collector caution new package 1-ch only dip type ps2532-4 ps2532-1 top view top view 9.70.5 6.5 +0.7 C0.5 3.50.3 4.150.4 3.30.5 2.54 1.250.15 0.500.10 0.25 m 0 to 15? 7.62 0.25 +0.1 C0.05 ps2532-2 4.60.5 6.5 +0.7 C0.5 3.50.3 4.150.4 3.30.5 2.54 1.250.15 0.500.10 0.25 m 0 to 15? 7.62 0.25 +0.1 C0.05 19.80.5 6.5 +0.7 C0.5 0 to 15? 7.62 0.25 +0.1 C0.05 3.50.3 4.150.4 3.30.5 2.54 1.250.15 0.500.10 0.25 m top view 12 43 12345678 16 15 14 13 12 11 10 9 1234 8765 1, 3. anode 2, 4. cathode 5, 7. emitter 6, 8. collector 1. anode 2. cathode 3. emitter 4. collector 1, 3, 5, 7. anode 2, 4, 6, 8. cathode 9, 11, 13, 15. emitter 10, 12, 14, 16. collector
data sheet p11434ej6v0ds 3 ps2532-1,-2,-4,ps2532l-1,-2,-4 lead bending type (new package) ps2532l-1 top view 0.25 m 4.60.35 6.5 +0.7 C0.5 3.50.3 2.54 1.250.15 0.15 0.90.25 9.600.4 0.25 +0.1 C0.05 0.1 +0.1 C0.05 12 43 1. anode 2. cathode 3. emitter 4. collector caution new package 1-ch only lead bending type ps2532l-2 top view ps2532l-1 top view ps2532l-4 top view 4.60.5 6.5 +0.7 C0.5 0.25 m 3.50.3 2.54 1.250.15 0.15 0.90.25 9.600.4 0.25 +0.1 C0.05 0.1 +0.1 C0.05 9.70.5 6.5 +0.7 C0.5 2.54 1.250.15 0.25 m 0.15 3.50.3 0.90.25 9.600.4 0.25 +0.1 C0.05 0.1 +0.1 C0.05 19.80.5 6.5 +0.7 C0.5 2.54 1.250.15 0.25 m 3.50.3 0.15 0.90.25 9.600.4 0.25 +0.1 C0.05 0.1 +0.1 C0.05 12 43 12345678 16 15 14 13 12 11 10 9 1234 8765 1, 3. anode 2, 4. cathode 5, 7. emitter 6, 8. collector 1. anode 2. cathode 3. emitter 4. collector 1, 3, 5, 7. anode 2, 4, 6, 8. cathode 9, 11, 13, 15. emitter 10, 12, 14, 16. collector
data sheet p11434ej6v0ds 4 ps2532-1,-2,-4,ps2532l-1,-2,-4 marking example 2532 m 003 ps2532-2 m 003 e f ps2532-1 ps2532-2, -4 assembly lot week assembled year assembled (last 1 digit) in-house code ctr rank code no. 1 pin mark package new pkg standard pkg made in japan made in taiwan no. 1 pin mark m f week assembled year assembled (last 1 digit) in-house code ctr rank code package new pkg standard pkg made in japan made in taiwan 0 03 m 0 03 blank blank country assembled type number assembly lot
data sheet p11434ej6v0ds 5 ps2532-1,-2,-4,ps2532l-1,-2,-4 ordering information part number package packing style safety standard approval application part number *1 ps2532-1 4-pin dip magazine case 100 pcs standard products ps2532-1 ps2532l-1 (ul, csa, bsi, ps2532l-1-e3 embossed tape 1 000 pcs/reel nemko, semko, ps2532l-1-e4 demko, fimko ps2532l-1-f3 embossed tape 2 000 pcs/reel approved) ps2532l-1-f4 ps2532-2 8-pin dip magazine case 45 pcs ps2532-2 ps2532l-2 ps2532l-2-e3 embossed tape 1 000 pcs/reel ps2532l-2-e4 ps2532-4 16-pin dip magazine case 20 pcs ps2532-4 ps2532l-4 ps2532-1-v 4-pin dip magazine case 100 pcs vde0884 approved ps2532-1 ps2532l-1-v products (option) ps2532l-1-v-e3 embossed tape 1 000 pcs/reel ps2532l-1-v-e4 ps2532l-1-v-f3 embossed tape 2 000 pcs/reel ps2532l-1-v-f4 ps2532l-2-v 8-pin dip magazine case 45 pcs ps2532-2 ps2532l-2-v ps2532l-2-v-e3 embossed tape 1 000 pcs/reel ps2532l-2-v-e4 PS2532-4-V 16-pin dip magazine case 20 pcs ps2532-4 ps2532l-4-v *1 for the application of the safety standard, following part number should be used.
data sheet p11434ej6v0ds 6 ps2532-1,-2,-4,ps2532l-1,-2,-4 absolute maximum ratings (t a = 25 c, unless otherwise specified) ratings parameter symbol ps2532-1, ps2532l-1 ps2532-2, -4, ps2532l-2, -4 unit diode forward current (dc) i f 80 ma reverse voltage v r 6v power dissipation derating d p d / c1.5 1.2 mw c power dissipation p d 150 120 mw/ch peak forward current *1 i fp 1a transistor collector to emitter voltage v ceo 300 v emitter to collector voltage v eco 0.6 v collector current i c 150 ma/ch power dissipation derating d p c / c 3.0 2.4 mw/ c power dissipation p c 300 240 mw/ch isolation voltage *2 bv 5 000 vr.m.s. operating ambient temperature t a - 55 to +100 c storage temperature t stg - 55 to +150 c *1 pw = 100 m s, duty cycle = 1 % *2 ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and output
data sheet p11434ej6v0ds 7 ps2532-1,-2,-4,ps2532l-1,-2,-4 electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.15 1.40 v reverse current i r v r = 5 v 5 m a terminal capacitance c t v = 0 v, f = 1.0 mhz 30 pf transistor collector to emitter dark current i ceo v ce = 300 v, i f = 0 ma 400 na coupled current transfer ratio (i c /i f ) ctr i f = 1 ma, v ce = 2 v 1 500 4 000 6 500 % collector saturation voltage v ce(sat) i f = 1 ma, i c = 2 ma 1.0 v isolation resistance r i-o v i-o = 1.0 kv dc 10 11 w isolation capacitance c i-o v = 0 v, f = 1.0 mhz 0.6 pf rise time *1 t r v cc = 5 v, i c = 10 ma, r l = 100 w 100 m s fall time *1 t f 100 *1 test circuit for switching time (pw = 1 ms, duty cycle = 1/10) pulse input v cc v out r l = 100 w 50 w i f
data sheet p11434ej6v0ds 8 ps2532-1,-2,-4,ps2532l-1,-2,-4 typical characteristics (t a = 25 c, unless otherwise specified) ambient temperature t a (?c) transistor power dissipation p c (mw) transistor power dissipation vs. ambient temperature 400 300 200 100 0 25 50 75 100 125 150 ps2532-1 ps2532l-1 3.0 mw/?c ps2532-2, -4 ps2532l-2, -4 2.4 mw/?c diode power dissipation vs. ambient temperature ambient temperature t a (?c) diode power dissipation p d (mw) 150 100 50 0 25 50 75 100 125 150 ps2532-1 ps2532l-1 1.5 mw/?c ps2532-2, -4 ps2532l-2, -4 1.2 mw/?c collector current vs. collector to emitter voltage collector to emitter voltage v ce (v) collector current i c (ma) 160 140 120 100 80 60 40 20 02 1 3456 8 7 i f = 0.5 ma 1.0 ma 1.5 ma 2.0 ma 2.5 ma 3.0 ma 3.5 ma 4.0 ma 5.0 ma 4.5 ma v ce = 300 v collector to emitter dark current vs. ambient temperature ambient temperature t a (?c) collector to emitter dark current i ceo (a) C50 C25 0 25 50 75 100 100 n 10 n 1 n 100 p 10 m 1 m collector current vs. collector saturation voltage collector saturation voltage v ce(sat) (v) collector current i c (ma) 500 100 10 50 1 5 0.1 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i f = 5.0 ma 2.0 ma 1.0 ma 0.5 ma forward current vs. forward voltage forward voltage v f (v) forward current i f (ma) 100 10 1 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 +25 ?c 0 ?c C25 ?c C55 ?c t a = +100 ?c +75 ?c +50 ?c
data sheet p11434ej6v0ds 9 ps2532-1,-2,-4,ps2532l-1,-2,-4 normalized current transfer ratio vs. ambient temperature ambient temperature t a (?c) normalized current transfer ratio ctr 1.2 0.8 0.4 0.0 1.0 0.6 0.2 C50 C25 25 50 75 100 0 normalized to 1.0 at t a = 25 c, i f = 1 ma, v ce = 2 v 500 100 50 10 1 5 20 100 200 500 1 k 2 k 50 switching time vs. load resistance load resistance r l ( w ) switching time t ( s) m v cc = 10 v, i c = 10 ma t r t d t s t f forward current i f (ma) current transfer ratio ctr (%) current transfer ratio vs. forward current 5 000 4 000 3 000 1 000 0 2 000 1510 0.1 0.5 15 v ce = 2 v sample a b long term ctr degradation time (hr) ctr (relative value) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10 10 2 10 3 10 4 10 5 10 6 i f = 1 ma, t a = 25 ?c i f = 1 ma, t a = 60 ?c frequency response frequency f (khz) normalized gain gv 5 0 C10 C5 C15 C20 C25 C30 0.01 0.1 1 10 100 r l = 1 k w 10 w 100 w v ce = 4 v, v in = 0.1 v p-p 1 k w 1 f m r l v in v out 47 w remark the graphs indicate nominal characteristics.
data sheet p11434ej6v0ds 10 ps2532-1,-2,-4,ps2532l-1,-2,-4 taping specifications (unit : mm) tape direction outline and dimensions (tape) outline and dimensions (reel) packing: 1 000 pcs/reel 2.00.5 r 1.0 13.00.5 f 21.00.8 f 16.4 +2.0 C0.0 1.6 250 f 80.05.0 f ps2532l-1-e3 ps2532l-1-e4 1.550.1 2.00.1 4.00.1 1.750.1 4.5 max. 4.00.1 0.4 5.30.1 8.00.1 7.50.1 16.00.3 10.30.1 1.5 +0.1 C0 f
data sheet p11434ej6v0ds 11 ps2532-1,-2,-4,ps2532l-1,-2,-4 tape direction outline and dimensions (tape) outline and dimensions (reel) packing: 2 000 pcs/reel 2.00.5 r 1.0 13.00.5 f 21.00.8 f 16.4 +2.0 C0.0 80.05.0 f ps2532l-1-f3 ps2532l-1-f4 1.5 330 f 1.550.1 2.00.1 4.00.1 1.750.1 4.5 max. 4.00.1 0.4 5.30.1 8.00.1 7.50.1 16.00.3 10.30.1 1.5 +0.1 C0 f
data sheet p11434ej6v0ds 12 ps2532-1,-2,-4,ps2532l-1,-2,-4 tape direction outline and dimensions (tape) outline and dimensions (reel) packing: 1 000 pcs/reel 16.4 +2.0 C0.0 80.05.0 f 330 f 2.00.5 r 1.0 13.00.5 f 21.00.8 f ps2532l-2-e3 ps2532l-2-e4 1.5 1.550.1 2.00.1 4.00.1 1.750.1 4.5 max. 10.40.1 12.00.1 1.5 +0.1 C0 7.50.1 10.30.1 16.00.3 4.00.1 0.3
data sheet p11434ej6v0ds 13 ps2532-1,-2,-4,ps2532l-1,-2,-4 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 235 c or below (package surface temperature) ? time of temperature higher than 210 c 30 seconds or less ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt % is recommended.) 60 to 120 s (preheating) 210 ?c 100 to 160 ?c package surface temperature t (?c) time (s) (heating) to 10 s to 30 s 235 ?c (peak temperature) recommended temperature profile of infrared reflow (2) dip soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt % is recommended.) (3) cautions ?fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aware that when voltage is applied suddenly between the photocouplers input and output or between corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings.
data sheet p11434ej6v0ds 14 ps2532-1,-2,-4,ps2532l-1,-2,-4 specification of vde marks license document (vde0884) parameter symbol speck unit application classification (din vde 0109) for rated line voltages 300 vr.m.s. for rated line voltages 600 vr.m.s. iv iii climatic test class (din iec 68 teil 1/09.80) 55/100/21 dielectric strength maximum operating isolation voltage test voltage (partial discharge test, procedure a for type test and random test) u pr = 1.2 u iorm , p d < 5 pc u iorm u pr 890 1 068 v peak v peak test voltage (partial discharge test, procedure b for random test) u pr = 1.6 u iorm , p d < 5 pc u pr 1 424 v peak highest permissible overvoltage u tr 6 000 v peak degree of pollution (din vde 0109) 2 clearance distance > 7.0 mm creepage distance > 7.0 mm comparative tracking index (din iec 112/vde 0303 part 1) cti 175 material group (din vde 0109) iii a storage temperature range t stg - 55 to +150 c operating temperature range t a C55 to +100 c isolation resistance, minimum value v io = 500 v dc at t a = 25 c v io = 500 v dc at t a max. at least 100 c ris min. ris min. 10 12 10 11 w w safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) package temperature current (input current i f , psi = 0) power (output or total power dissipation) isolation resistance v io = 500 v dc at t a = 175 c (tsi) tsi isi psi ris min. 175 400 700 10 9 c ma mw w
data sheet p11434ej6v0ds 15 ps2532-1,-2,-4,ps2532l-1,-2,-4 application for telephone (example) line bell ringing signal (75 vr.m.s., 16 hz) ps2505/ps2506 ps2705/ps2707 ps2805 etc. bell ringing detect v cc v cc line observe dial pulse ps2532/ps2533 generator ps2732/ps2733 ps2832/ps2833 ps2521 ps2525 dialer circuit in out cpu ocmos fet ps7xxx speech circuit
ps2532-1,-2,-4,ps2532l-1,-2,-4 caution within this device there exists gaas (gallium arsenide) material which is a harmful substance if ingested. please do not under any circumstances break the hermetic seal. nepoc is a trademark of nec corporation. m8e 00. 4 the information in this document is current as of march, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).

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