2sc3419 2006-11-09 1 toshiba transistor silicon npn epitaxial type (pct process) 2sc3419 medium-power amplifier applications. ? low saturation voltage: v ce (sat) = 0.25 v (typ.) (i c = 500 ma, i b = 50 ma) ? high collector power dissipation: p c = 1.2 w (ta = 25c) ? complementary to 2sa1356 absolute maximum ratings (tc = 25c) characteristics symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5 v collector current i c 800 ma base current i b 80 ma ta = 25c 1.2 collector power dissipation tc = 25c p c 5 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon review ing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and in dividual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm jedec D jeita D toshiba 2-8h1a weight: 0.82 g (typ.)
2sc3419 2006-11-09 2 electrical characteristics (tc = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 40 v, i e = 0 D D 1.0 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 1.0 a collector-emitter breakdown voltage v ceo i c = 10 ma, i b = 0 40 D D v h fe (1) (note) v ce = 2 v, i c = 50 ma 70 D 240 dc current gain h fe (2) v ce = 2 v, i c = 0.8 a 13 60 D collector-emitter saturation voltage v ce (sat) i c = 500 ma, i b = 50 ma D 0.25 0.8 v base-emitter voltage v be v ce = 2 v, i c = 500 ma D 0.90 1.1 v transition frequency f t v ce = 2 v, i c = 0.5 a 50 100 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 10 D pf note: h fe (1) classification o: 70 to 140, y: 120 to 240 marking c3419 part no. (or abbreviation code) characteristics indicator lot no. a line indicates lead (pb)-free package or lead (pb)-free finish.
2sc3419 2006-11-09 3 collector power dissipation p c (w) collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) collector current i c (ma) h fe ? i c dc current gain h fe collector current i c (ma) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) base-emitter voltage v be (v) i c ? v be ambient temperature ta (c) p c ? ta safe operating area collector current i c (ma) collector-emitter voltage v ce (v) 1.0 0 0 common emitter tc = 2 5 c 1000 600 3 4 6 5 10 6 4 12 20 i b = 2 ma 0 8 2 1 200 400 800 ? 25 common emitter i c /i b = 10 3 0.01 0.05 0.1 30 100 tc = 100c 25 1000 300 10 0.03 0.3 0.5 (1) tc = ta infinite heat sink (2) no heat sink 0 80 120 200 160 40 8 0 4 2 6 (1) (2) 25 10 300 common emitter v ce = 2 v 10 30 50 100 1000 30 100 1000 tc = 100c ? 25 300 3 500 ? 25 common emitter v ce = 2 v 1000 400 600 800 tc = 100c 25 200 0.2 0.4 0.8 1.2 1.0 0.6 0 0 0.3 1 3 10 30 20 50 300 500 1000 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. 100 3000 100 i c max (pulsed)* i c max (continuous)* dc operation ta = 25c v ceo max 1 ms* 10 ms* 100 ms* dc operation tc = 25c
2sc3419 2006-11-09 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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