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rs1a ? rs1m 1.0a sur f ace mount f a st recove r y rectifier da t a sheet 2712, re v . a features glass passivated die construction ideally suited for automatic assembly b low forward voltage drop, high efficiency surge overload rating to 30a peak low power loss a fast recovery time f plastic case material has ul flammability classification rating 94v-o c h g e mechanical data case: molded plastic terminals: solder plated, solderable per mil-std-750, method 2026 polarity: cathode band or cathode notch marking: type number weight: 0.064 grams (approx.) maximum ratings and electrical characteristics @t a =25c unless otherwise specified sma/do-214ac dim min m a x m i n m a x a 2.50 2 . 9 0 0 . 0 9 8 0.114 b 4.00 4 . 6 0 0 . 1 5 7 0 . 1 8 1 c 1.40 1 . 6 0 0 . 0 5 5 0 . 0 6 3 d 0.152 0 . 3 0 5 0 . 0 0 6 0 . 0 1 2 e 4.80 5 . 2 8 0 . 1 8 9 0 . 2 0 8 f 2.00 2 . 4 4 0 . 0 7 9 0 . 0 9 6 g 0.051 0 . 2 0 3 0 . 0 0 2 0 . 0 0 8 h 0.76 1 . 5 2 0 . 0 3 0 0 . 0 6 0 in mm in inch c h a r a c t e r i s t i c s ymbol rs1a rs1b rs1d rs1g r s 1 j r s 1 k rs1m u n i t peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 5 0 1 0 0 200 4 0 0 6 0 0 8 0 0 1000 v rms reverse voltage v r(rms) 3 5 7 0 140 2 8 0 4 2 0 5 6 0 700 v average rectified output current @t l = 90c i o 1 . 0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 3 0 a forward voltage @i f = 1.0a v fm 1 . 3 0 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 125c i rm 5.0 300 a reverse recovery time (note 1) t rr 1 5 0 2 5 0 5 0 0 n s typical junction capacitance (note 2) c j 1 0 p f typical thermal resistance (note 3) r jl 3 2 k / w operating and storage temperature range t j, t stg -50 to +150 c note: 1. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a, 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 land area. sensitron semiconductor ?
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0 0.4 1.2 2 5 5 0 7 5 10 0 12 5 15 0 175 i , average rectified current (a) o t , l e a d temper a tur e ( c ) fig. 1 forward current derating curve l 0.2 0.6 0.8 1.0 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 i instantaneous forward current (a) f, v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f t = 25c j i pulse width: 300 s f m 0 10 20 30 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 forward surge current derating curve single half-sine-wave (jedec method) t = 150c j 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under test t rr se t tim e bas e fo r 10 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 5 0 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0.1 1.0 10 100 1000 0 20 40 60 8 0 100 120 140 i , instantaneous reverse current (a) r percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics t = 125 c j t = 25c j ? 221 w est i ndus t r y cou r t deer pa r k , ny 11729 - 4681 ( 631) 586 - 7600 fax ( 631) 242 - 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ?
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discl a imer : 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior not ice to imp rove product characteristics. before ordering, purchasers are advised to contact the s ensitron semiconductor sales department for th e latest version of the datasheet(s). 2- in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users? fail-safe prec autions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of information, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or ot her rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any f o rm, in w hole or part, w i thout the expressed w r it ten permiss i on of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary pr ocedures are to be taken in accordance with related laws a nd regulations. sensitron semiconductor
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