2001. 9. 14 1/2 semiconductor technical data ktc945b epitaxial planar npn transistor revision no : 2 general purpose application. switching application. features excellent h fe linearity. : h fe (i c =0.1ma)/h fe (i c =2ma)=0.95(typ.) low noise : nf=1db(typ.). at f=1khz complementary to kta733b(o, y, gr class). maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 60 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 50 - - v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 - - v collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =6v, i c =2ma 70 - 700 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma - - 1.0 v transition frequency f t v ce =10v, i c =10ma - 300 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf noise figure nf v ce =6v, i c =0.1ma rg=10k , f=1khz - 1.0 10 db note : h fe classification o:70~140, y:120~240, gr:200~400, bl:350~700
2001. 9. 14 2/2 ktc945b revision no : 2
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