edition 1.5 july 2009 1 c-band internally matched fet features ? high output power: p1db=40.5dbm(typ.) ? high gain: g1db=9.5db(typ.) ? high pae: h add=36%(typ.) ? broad band: 6.4 7.2ghz ? impedance matched zin/zout = 50 w ? hermetically sealed package description the ELM6472-10F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 w system. ELM6472-10F absolute maximum ratings (case temperature tc=25 o c) item symbol unit drain-source voltage v ds v gate-source voltage v gs v total pow er dissipation p t w storage tem perature t stg o c channel tem perature t ch o c recommended operating condition (case temperature tc=25 o c) item sym bol unit dc input voltage v ds v forw ard gate current i gf ma reverse gate current i gr ma electrical characteristics (case temperature tc=25 o c) min. typ. max. drain current i dss - 4.0 5.6 a trans conductance g m - 4.0 - s pinch-off voltage v p -0.5 -1.5 -3.0 v gate-source breakdow n voltage v gso -5.0 - - v output pow er at 1db g.c.p. p 1db 39.5 40.5 - dbm pow er gain at 1db g.c.p. g 1db 8.5 9.5 - db drain current i dsr - 2.6 3.0 a pow er-added efficiency n add - 36 - % gain flatness d g - - 1.2 db 3rd order interm odulation distortion im 3 -44 -46 - dbc therm al resistance r th channel to case - 3.0 3.5 o c/w channel tem perature rise d t ch - - 100 o c case style : ik s.c.l. : single carrier level g.c.p.: gain com pression point esd class iiia 4000 ~ 8000v note : based on jedec jesd22-a114 (c=100pf, r=1500 w ) r g =50 ohm Q 27.0 42.8 rating 15 -5 condition lim it -55 to +125 175 r g =50 ohm R -5.8 item sym bol condition lim it Q 10 i gs =-240ua v ds =10v f= 6.4 ~ 7.2 ghz i ds dc=2.6a (typ.) zs=z l =50 ohm 10v x i dsr x r th unit v ds =5v , v gs =0v v ds =5v , i ds =2.4a v ds =5v , i ds =240ma f=7.2 ghz d f=10mhz 2-tone test pout=29dbm (s.c.l.)
28 30 32 34 36 38 40 42 44 18 20 22 24 26 28 30 32 34 input power (dbm) o u t p u t p o w e r ( d b m ) 0 10 20 30 40 50 60 70 80 p . a . e . ( % ) 6.4 g hz 6.8g h z 7.2g hz -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 23 25 27 29 31 33 output pow er [s.c.l.] (dbm ) i m d ( d b c ) 6 .4 g hz 6.8 g hz 7 .2g hz ELM6472-10F c-band internally matched fet 2 0 10 20 30 40 50 0 50 100 150 200 case temperature [ c] t o t a l p o w e r d i s s i p a t i o n [ w ] input power vs. output power & p.a.e vds=10v, ids(dc)=2.6a output power vs. imd vds=10v, ids(dc)=2.6a, d f=10mhz im3 im5 frequency vs. output power vds=10v, ids(dc)=2.4a 2-tone test power derating curve 28 30 32 34 36 38 40 42 44 6.2 6.4 6.6 6.8 7.0 7.2 7.4 frequency (ghz) o u t p u t p o w e r ( d b m ) p1db 33dbm 30dbm 24dbm 19dbm frequency vs. output power vds=10v, ids(dc)=2.6a
c-band internally matched fet 3 s-parameter vds=10.0v , ids=2.6a ELM6472-10F s11 s22 6 .4ghz 6 .4ghz 7 .2ghz 7 .2ghz 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j s21 s12 0.6 6 10 180 0 - +90 s c a l e f o r | s 1 2 | 3 scale for |s 21 | 6 .4ghz 6 .4ghz 7 . 2 ghz 7 .2ghz freq [ghz] mag ang mag ang mag ang mag ang 6.2 0.566 -82.6 3.424 60.0 0.048 16.0 0.128 -103.6 6.3 0.531 -108.2 3.470 34.0 0.054 -7.2 0.170 -156.7 6.4 0.494 -135.1 3.533 7.7 0.057 -32.8 0.245 170.3 6.5 0.466 -159.6 3.476 -16.3 0.061 -57.1 0.313 145.0 6.6 0.437 176.9 3.420 -40.6 0.066 -78.3 0.366 123.9 6.7 0.414 154.1 3.395 -64.8 0.071 -100.6 0.414 104.3 6.8 0.378 131.7 3.364 -89.6 0.074 -126.6 0.444 85.1 6.9 0.339 110.0 3.364 -114.4 0.079 -148.3 0.469 66.7 7.0 0.279 88.7 3.369 -140.1 0.081 -173.4 0.475 48.0 7.1 0.215 70.0 3.304 -165.4 0.084 160.8 0.464 30.5 7.2 0.135 54.3 3.292 168.3 0.086 137.2 0.432 12.0 7.3 0.036 55.9 3.307 141.9 0.086 111.8 0.381 -6.0 7.4 0.096 173.9 3.241 114.8 0.090 82.9 0.312 -22.1 s11 s21 s12 s22
package out line case style : ik pin assignment 1 : gate 2 : source 3 : drain 4 : source unit : mm 3 c-band internally matched fet ELM6472-10F
4 ELM6472-10F c-band internally matched fet for further information please contact : caution eudyna devices compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com eudyna devices europe ltd. 150 edinburgh avenue, slough, berkshire, sl1 4ss, united kingdom phone: +44 (0) 1753-849950 fax: +44 (0) 1753-577128 eudyna devices asia pte. ltd. hong kong branch rm.1906b, 19/f, tower 6, china hong kong city, 33 canton road, tsim sha tsui, kowloon, hong kong tel: 852 2377-0227 fax: 852 2377-3921 eudyna devices inc. yokohama (hq) 1,kanai-cho,sakae-ku,yokohama, kanagawa, 244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. yamanashi plant 1000 kamisukiawara, showa-cho, nakakoma-gun, yamanashi, 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 eudyna devices international s.r.l via teglio 8/2-20158 milano italy tel:+39-02-37052921 fax :+39-02-37052920
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