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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 45* i d @ v gs = 12v, t c = 100c continuous drain current 45* i dm pulsed drain current 180 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 1250 mj i ar avalanche current 45 a e ar repetitive avalanche energy 20.8 mj dv/dt peak diode recovery dv/dt 1.08 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. /1.6 mm from case for 10s) weight 9.3 (typical) g o c a www.irf.com 1 * current is limited by package for footnotes refer to the last page pre-irradiation to-254aa low-ohmic features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. irhms57z60 radiation hardened JANSR2N7478T1 power mosfet 30v, n-channel thru-hole (low-ohmic to-254aa) ref: mil-prf-19500/697 technology product summary part number radiation level r ds(on) i d qpl part number irhms57z60 100k rads (si) 0.0045 ? 45a* JANSR2N7478T1 irhms53z60 300k rads (si) 0.0045 ? 45a* jansf2n7478t1 irhms54z60 500k rads (si) 0.0045 ? 45a* jansg2n7478t1 irhms58z60 1000k rads (si) 0.0045 ? 45a* jansh2n7478t1 pd-96961a
irhms57z60, JANSR2N7478T1 pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 45* i sm pulse source current (body diode) ? ? 180 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 45a, v gs = 0v t rr reverse recovery time ? ? 140 ns t j = 25c, i f = 45a, di/dt 100a/ s q rr reverse recovery charge ? ? 350 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page * current is limited by package thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.60 r thcs case-to-sink ? 0.21 ? c/w r thja junction-to-ambient ? ? 48 t ypical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.03 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.0045 ? v gs = 12v, i d = 45a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 73 ? ? s ( ) v ds = 15v, i ds = 45a i dss zero gate voltage drain current ? ? 10 v ds = 24v ,v gs = 0v ??25 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 240 v gs =12v, i d = 45a q gs gate-to-source charge ? ? 60 nc v ds = 15v q gd gate-to-drain (?miller?) charge ? ? 55 t d (on) turn-on delay time ? ? 35 v dd = 15v, i d = 45a t r rise time ? ? 175 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 80 t f fall time ? ? 40 l s + l d total inductance ? 6.8 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 8884 ? v gs = 0v, v ds = 25v c oss output capacitance ? 4334 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 270 ? r g internal gate resistance ? 0.73 ? ? f = 1.0mhz, open drain na ? nh ns a note: corresponding spice and saber models are available on international rectifier web site.
www.irf.com 3 pre-irradiation irhms57z60, JANSR2N7478T1 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 30 ? 30 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 24v, v gs = 0v r ds(on) static drain-to-source ? 0.0040 ? 0.0045 ? v gs =12v, i d = 45a on-state resistance (to-3) r ds(on) static drain-to-source on-state ? 0.0045 ? 0.0050 ? v gs =12v, i d = 45a resistance (low-ohmic to-254) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhms57z60 (JANSR2N7478T1), irhms53z60 (jansf2n7478t1) and irhms54z60 (jansg2n7478t1) 2. part number irhms58z60 (jansh2n7478t1) fig a. single event effect, safe operating area v sd diode forward voltage ? 1.2 ? 1.2 v v gs = 0v, i s = 45a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28 261 40 30 30 30 25 15 br 37 285 37 30 30 30 23 15 i 60 344 33 25 25 20 15 8 0 5 10 15 20 25 30 35 -20 -15 -10 -5 0 vgs vds cu br i
irhms57z60, JANSR2N7478T1 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top 15v 12v 10v 8.0v 6.0v 5.0v 4.5v bottom 4.0v 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 6.0v 5.0v 4.5v bottom 4.0v 4.0v 44.555.56 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 12v i d = 45a
www.irf.com 5 pre-irradiation irhms57z60, JANSR2N7478T1 100khz fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 14000 16000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 40 80 120 160 200 240 280 320 q g, total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 45a for test circuit see figure 13 0 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
irhms57z60, JANSR2N7478T1 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %

+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 0 40 80 120 160 t , case temperature ( c) i , drain current (a) c d limited by package
www.irf.com 7 pre-irradiation irhms57z60, JANSR2N7478T1 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 800 1600 2400 3200 4000 e , single pulse avalanche energy (mj) as i d top bottom 20.1a 28.5a 45a starting t j , - junction temperature (c)
irhms57z60, JANSR2N7478T1 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 1.1 mh peak i l = 45a, v gs = 12v i sd 45a, di/dt 150a/ s, v dd 30v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2006 case outline and dimensions ? low-ohmic to-254aa 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c
3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535]
b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.

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