0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC2411K features high i cmax .i cmax . = 0.5a low v ce(sat) . optimal for low voltage operation. npn silicon transistor absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 32 v emitter-base voltage v ebo 5v collector current * i c 0.5 a collector power dissipation p c 0.2 w junction temperature tj 150 storage temperature t stg -55to+150 *p c must not be exceeded. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c = 100a 40 v collector-emitter breakdown voltage v ceo i c =1ma 32 v emitter-base breakdown voltage v ebo i e = 100a 5 v collector cutoff current i cbo v cb = 20v 1 a emitter cutoff current i ebo v eb =4v 1 a dc current gain h fe v ce =3v,i c = 100ma 120 390 collector-emitter saturation voltage v ce(sat) i c /i b = 500ma/50ma 0.6 v output capacitance c ob v cb = 10v, i e = 0a, f = 1mhz 6.5 pf transition frequency f t v ce =5v,i e = -20ma, f = 100mhz 250 mhz h fe classification marking cq cr rank q r hfe 120 270 180 390 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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