mosfet 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3366 features super low on-state resistance: r ds(on)1 =21m max. (v gs =10v,i d =10a) r ds(on)2 = 33m max. (v gs =4.5v,i d = 10a) r ds(on)3 = 43m max. (v gs =4v,i d = 10a) low c iss :c iss =730 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v i d 30 a i dp * 80 a power dissipation t a =25 1.0 t c =25 30 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =30v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.0 2.5 v forward transfer admittance y fs v ds =10v,i d =10a 5 10 s v gs =10v,i d =10a 17.2 21 m v gs =4.5v,i d =10a 26 33 m v gs =4.0v,i d =10a 33 43 m input capacitance c iss 730 pf output capacitance c oss 250 pf reverse transfer capacitance c rss 120 pf turn-on delay time t on 28 ns rise time t r 420 ns turn-off delay time t off 47 ns fall time tf 64 ns total gate charge q g 15 nc gate to source charge q gs 2.8 nc gate to drain charge q gd 4.1 nc v ds =10v,v gs =0,f=1mhz i d =10a,v gs(on) =10v,r g =10 ,v dd =15v v dd = 24v, v gs =10v,i d = 20a drain to source on-state resistance r ds(on) 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type smd type smd type smd type smd type product specification
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