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gaas devices selection guide 2002/2003
selection guide PG10195EJ01V0PF 2 safety information on this product caution gaas products the product contains gallium arsenide, gaas. gaas vapor and powder are hazardous to human health if inhaled or ingested. ? do not destroy or burn the product. ? do not cut or cleave off any part of the product. ? do not crush or chemically dissolve the product. ? do not put the product in the mouth. follow related laws and ordinances for disposal. the product should be excluded from general industrial waste or household garbage. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. m8e 00. 4 - 0110 the information in this document is current as of september 2002. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
selection guide PG10195EJ01V0PF 3 table of contents 1. series of gaas device products ...................................................................................... 4 2. map of the rf performance .............................................................................................. 5 hj-fet ............................................................................................................................... ............ 5 power gaas fet ............................................................................................................................ 6 3. electrical characteristics table .................................................................................. 7 hj-fet (hetero junction fet) ....................................................................................................... 7 gaas mes fet .............................................................................................................................. 7 gaas hbt (hetero junction bipolar transistor) ............................................................................. 9 hj-fet (hetero junction fet) chip .............................................................................................. 9 gaas mes fet chip ...................................................................................................................... 9 gaas mes fet ............................................................................................................................. 11 uhf dual gate gaas mes fet .................................................................................................... 11 l, s-band internally matched power gaas fet series ................................................................ 13 l to c-band driver power gaas fet ............................................................................................ 13 ku-band power gaas fet ............................................................................................................ 13 gaas analog mmic (wideband amplifier) .................................................................................... 14 gaas analog mmic (agc amplifier) ............................................................................................. 14 gaas analog mmic (dual amplifier) ............................................................................................. 1 4 gaas analog mmic (power amplifier) .......................................................................................... 16 dbs if switch.................................................................................................................. .............. 16 gaas switch mmic............................................................................................................... ......... 16 multi-chip module for catv .......................................................................................................... 18 4. application note ...................................................................................................................... 19 5. package dimensions ............................................................................................................... 20 fet ............................................................................................................................... ................. 20 power fet ............................................................................................................................... ...... 20 mmic ............................................................................................................................... .............. 22 6. index ............................................................................................................................... ................ 23 7. reference ............................................................................................................................... ..... 24 8. web site information ............................................................................................................. 24
selection guide PG10195EJ01V0PF 4 1. series of gaas device products gaas devices discrete fet hj-fet (hetero junction fet) dual gate mes fet mes fet power fet mmic multi-chip module agc amplifier prescaler amplifier switch power amplifier catv
selection guide PG10195EJ01V0PF 5 2. map of the rf performance hj-fet associated gain vs. noise figure associated gain vs. noise figure 13 12 18 17 16 15 14 13 associated gain g a (db) associated gain g a (db) 11 10 0.3 0.4 0.5 0.6 noise figure nf (db) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 noise figure nf (db) 0.7 0.8 0.9 ne429m01 ne34018 2sc5761 (sige) 2sc5508 (si-bjt) ne4210s01 ne3210s01 f = 12 ghz : : f = 2 ghz, v ds = 2 v, i d = 5 ma f = 2 ghz, v ds = 2 v, i d = 3 ma ne38018 ne52418 (gaas hbt)
selection guide PG10195EJ01V0PF 6 power gaas fet 21.0 19.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 37.0 39.0 41.0 43.0 45.0 47.0 49.0 51.0 53.0 output power, gain 1 db compression output power vs. frequency output power p out (dbm), gain 1 db compression output power p o(1 db) (dbm) frequency f (ghz) ne6501077 ne6500496 nes1823m-45 ne85002 series ne6510179a ne6500179a ne650r279a ne650r479a ne651r479a ne6500379a ne6510379a ne85001 series ne850r5 series ne960r575 ne960r275 (under development) nes1823m-150 nes1823m-240 (under development)
selection guide PG10195EJ01V0PF 7 3. electrical chracteristics table hj-fet (hetero junction fet) absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) i dss v p g m (ma) (v) (ms) part number pack- age code v ds (v) v gs (v) i d (ma) p tot (mw) t ch ( c) t stg ( c) v ds (v) min. typ. max. v ds (v) i d (ma) min. max. v ds (v) i d (ma) min. typ. ne3210s01 note1 s01 4.0 - 3.0 i dss 165 125 - 65 to +125 2 15 40 70 2 0.1 - 0.2 - 2.0 2 10 40 55 ne4210s01 s01 4.0 - 3.0 i dss 165 125 - 65 to +125 2 15 40 70 2 0.1 - 0.2 - 2.0 2 10 40 55 ne429m01 m01 4.0 - 3.0 i dss 165 125 - 65 to +125 2 20 60 90 2 0.1 - 0.2 - 2.0 2 10 45 60 ne34018 18 4.0 - 3.0 i dss 150 125 - 65 to +125 2 30 - 120 2 0.1 - 0.2 - 2.0 2 5 30 - ne38018 18 4.0 - 3.0 i dss 150 125 - 65 to +125 2 40 - 170 2 0.1 - 0.1 - 1.5 2 5 50 - notes 1. -t1: 1000 pcs/reel, -t1b: 4000 pcs/reel (tape & reel) 2. i dss rank is specified as follows (v63: 30 to 65 ma, v64: 60 to 120 ma) 3. i dss rank is specified as follows (v67: 40 to 90 ma, v68: 70 to 170 ma) gaas mes fet absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) i dss v p g m (ma) (v) (ms) part number pack- age code v ds (v) v gs (v) i d (ma) r th(c-c) ( c/w) p tot (mw) t ch ( c) t stg ( c) v ds (v) min. typ. max. v ds (v) i d (ma) min. max. v ds (v) i d (ma) min. typ. ne71383b 83b 5.0 - 5.0 i dss - 270 175 - 65 to +175 3 20 40 120 3 0.1 - 0.5 - 3.5 3 10 20 50
selection guide PG10195EJ01V0PF 8 electrical characteristics (t a = +25 c) msg./mag. nf opt g a (db) (db) (db) v ds (v) i ds (ma) f (ghz) typ. v ds (v) i ds (ma) f (ghz) typ. max. v ds (v) i ds (ma) f (ghz) min. typ. marking part number 2 10 12 15 2 10 12 0.35 0.45 2 10 12 12.0 13.5 k ne3210s01 note1 2 10 12 15 2 10 12 0.50 0.70 2 10 12 11.0 13.0 l ne4210s01 2 10 12 11 2 10 12 0.9 1.2 2 10 12 9.0 10.0 v72 ne429m01 252182520.61.02521416 note 2 ne34018 2 5 2 16 2 5 2 0.55 1.0 2 5 2 12.5 14.5 note 3 ne38018 electrical characteristics (t a = +25 c) msg./mag. nf opt g a (db) (db) (db) v ds (v) i ds (ma) f (ghz) typ. v ds (v) i ds (ma) f (ghz) typ. max. v ds (v) i ds (ma) f (ghz) min. typ. marking part number ---- 3 10 12 1.6 1.8 3 10 12 8.5 9.5 - ne71383b
selection guide PG10195EJ01V0PF 9 gaas hbt (hetero junction bipolar transistor) absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) h fe i cbo i ebo ( m a) ( m a) part number pack -age code v ceo (v) v cbo (v) v ebo (v) i c (ma) i b (ma) p tot (mw) t j ( c) t stg ( c) v ce (v) i c (ma) min. typ. max. v cbo (v) min. typ. max. v ebo (v) min. typ. max. ne52418 18 5.0 3.0 3.0 40 0.3 150 125 - 65 to 125 2 3 110 150 190 3 - 0.2 1.0 3 - 0.2 1.0 hj-fet (hetero junction fet) chip absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) i dss v p (ma) (v) part number v ds (v) v gs (v) i d (ma) p tot (mw) t ch ( c) t stg ( c) v ds (v) min. typ. max. v ds (v) i d (ma) min. max. ne321000 4 - 3i dss 200 175 - 65 to +175 2 15 40 70 2 0.1 - 0.2 - 2.0 ne32500 4 - 3i dss 200 175 - 65 to +175 2 20 60 90 2 0.1 - 0.2 - 2.0 gaas mes fet chip absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) i dss v p (ma) (v) part number v ds (v) v gs (v) i d (ma) p tot (mw) t ch ( c) t stg ( c) v ds (v) min. typ. max. v ds (v) i d (ma) min. max. ne71300 5 - 5i dss 400 175 - 65 to +175 3 20 40 120 3 0.1 - 0.5 - 3.5
selection guide PG10195EJ01V0PF 10 electrical characteristics (t a = +25 c) iip 3 nf g a (db) (db) (db) marking part number v ce (v) i c (ma) f (ghz) typ. v ce (v) i c (ma) f (ghz) typ. max. v ce (v) i c (ma) f (ghz) min. typ. 2.5 8 2 +8 2 3 2 0.95 1.35 2 3 2 15 17 v45 ne52418 electrical characteristics (t a = +25 c) g m nf opt g a (ms) (db) (db) part number v ds (v) i d (ma) min. typ. v ds (v) i d (ma) f (ghz) typ. max. v ds (v) i d (ma) f (ghz) min. typ. 2 10 40 55 2 10 12 0.35 0.45 2 10 12 12 13.5 ne321000 2 10 45 60 2 10 12 0.45 0.55 2 10 12 11 12.5 ne32500 electrical characteristics (t a = +25 c) g m nf opt g a p o(1 db) (ms) (db) (db) (dbm) part number v ds (v) i d (ma) min. typ. v ds (v) i d (ma) f (ghz) typ. max. min. typ. v ds (v) i d (ma) f (ghz) typ. 3 10 20 50 3 10 12 1.6 1.8 8.5 9.5 3 30 12 14.5 ne71300
selection guide PG10195EJ01V0PF 11 gaas mes fet absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) i dss v p g m (ma) (v) (ms) part number pack- age code v ds (v) v gs (v) i d (ma) p tot (mw) t ch ( c) t stg ( c) v ds (v) min. typ. max. v ds (v) i d (ma) min. max. v ds (v) i d (ma) min. typ. ne722s01 s01 5.0 - 6.0 i dss 250 125 - 65 to +125 3 60 90 120 3 0.1 - 0.5 - 4.0 3 30 20 40 ne72218 18 5.0 - 6.0 i dss 250 125 - 65 to +125 3 30 60 120 3 0.1 - 0.5 - 4.0 3 30 20 45 note i dss rank is specified as follows (v57: 30 to 120 ma, v58: 65 to 120 ma, v59: 30 to 75 ma) uhf dual gate gaas mes fet absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) bv dsx i dss v g1s(off) v g2s(off) i g1ss (v) (ma) (v) (v) part number pack -age code v dsx (v) v g1s (v) v g2s (v) i d (ma) p t (mw) t ch ( c) t stg ( c) v g1s (v) v g2s (v) i d ( m a) min. v ds (v) min. max. v ds (v) i d (ma) max. max. v ds (v) v g1s (v) 3sk299 (ne25118) 18 13 - 4.5 - 4.5 40 120 125 - 55 to +125 ---- 554050.1 - 3.5 - 3.5 0 - 4 note i dss rank is specified as follows (u71: 5 to 15 ma, u72: 10 to 25 ma, u73: 20 to 35 ma, u74: 30 to 40 ma)
selection guide PG10195EJ01V0PF 12 electrical characteristics (t a = +25 c) msg./mag. pn (10 khz offset) g s (db) dbc/hz (db) v ds (v) i ds (ma) f (ghz) typ. v ds (v) i ds (ma) f (ghz) typ. v ds (v) i ds (ma) f (ghz) min. typ. marking part number 310127 33011 - 90 3 30 12 - 6.0 p ne722s01 ---- 33011 - 90 3 30 12 - 5.0 note ne72218 electrical characteristics (t a = +25 c) i g1ss i g2ss ? y fs ? nf g ps ( m a) ( m a) (ms) c iss (pf) c rss (pf) (db) (db) v g2s (v) max. max. v ds (v) v g2s (v) i d (ma) f (khz) min. f (mhz) typ. typ. v ds (v) v g2s (v) i d (ma) f (mhz) typ. typ. min. typ. marking part number 0 10 10 5 1 10 1.0 18 1 1.0 0.02 5 1 10 900 1.1 2.5 16 20 note 3sk299 (ne25118)
selection guide PG10195EJ01V0PF 13 l, s-band internally matched power gaas fet series p out (dbm) g l (db) im 3 (dbc) part number v ds (v) i dsset (ma) f (ghz) typ. typ. typ. frequency range (ghz) package nes1823m-240 12.0 3 000 2.17 53.5 12.0 - 1.8 to 2.3 t-92m l to c-band driver power gaas fet p o(1 db) (dbm) g l (db) h add (%) part number v ds (v) i dsset (ma) f (ghz) typ. typ. typ. frequency range (ghz) package ne6500379a 6.0 500 1.9 35.0 10.0 50 0.8 to 3.0 79a ne6500496 10.0 400 2.3 36.0 note1 11.5 note2 45 2.3 96 ne6501077 10.0 1 000 2.3 39.5 note1 10.5 40 2.3 77 ne650r279a 6.0 50 1.9 23.0 16.0 45 0.8 to 3.0 79a ne650r479a 6.0 100 1.9 26.0 14.0 45 0.8 to 3.0 79a ne6500179a 6.0 200 1.9 30.0 12.0 note4 45 0.8 to 3.0 79a ne6510179a 3.5 200 1.9 32.5 note3 10.0 58 0.8 to 3.0 79a ne6510379a 3.5 200 1.9 32.5 note3 8.0 52 0.8 to 3.0 79a ne651r479a 3.5 50 1.9 27.0 note3 12.0 60 0.8 to 3.0 79a ne8500199 10.0 200 7.2 28.5 note1 9.0 note2 - 2.0 to 10.0 99 ne8500295-4 10.0 450 4.2 33.8 note1 10.5 note2 - 3.5 to 5.5 95 ne8500295-6 10.0 450 6.5 33.8 note1 9.5 note2 - 5.5 to 7.5 95 ne8500295-8 10.0 450 8.5 33.5 note1 8.0 note2 - 7.5 to 8.5 95 ne850r599a 10.0 100 7.2 25.5 note1 9.5 note2 - 2.0 to 10.0 99 notes 1. p o (min.) ( - 4: p in = 24.5 dbm, - 6: p in = 25.5 dbm, - 8: p in = 27.0 dbm) 2. g l (min.) 3. p out 4. p in = 0 dbm ku-band power gaas fet p o(1 db) (dbm) g l (db) h add (%) part number v ds (v) i dsset (ma) f (ghz) typ. typ. typ. frequency range (ghz) package ne960r275 9.0 90 14.5 25.0 10.0 35 4 to 18 75 ne960r575 9.0 180 14.5 27.5 9.0 30 4 to 18 75
selection guide PG10195EJ01V0PF 14 gaas analog mmic (wideband amplifier) absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) condition i dd (ma) part number v dd1 (v) v dd2 (v) v agc (v) p in (dbm) p t note (w) t stg ( c) t a ( c) v dd1 (v) v dd2 (v) v agc (v) f (ghz) typ. max. m pg2115tb +6 -- 00.14 - 35 to +150 - 30 to +90 +3 -- 0.89 to 0.96 12 16 note mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass pwb, t a = +85 c gaas analog mmic (agc amplifier) absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) condition i dd (ma) part number v dd1 (v) v dd2 (v) v agc (v) p in (dbm) p t note1 (w) t stg ( c) t a ( c) v dd1 (v) v dd2 (v) v agc (v) f (ghz) typ. max. m pg2106tb +6 +6 +6 - 80.14 - 35 to +150 - 30 to +90 +3 +3 +2.5 0.89 to 0.96 25 35 m pg2110tb +6 +6 +6 - 80.14 - 35 to +150 - 30 to +90 +3 +3 +2.5 1.429 to 1.453 25 35 m pg2128tb +6 +6 +6 - 80.14 - 35 to +150 - 30 to +90 +3 +3.5 +2.5 1.429 to 1.453 40 48 m pg2130tb +6 +6 +6 - 80.14 - 35 to +150 - 30 to +90 +3 +3.5 +2.5 1.429 to 1.453 25 35 notes 1. mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass pwb, t a = +85 c 2. d f = 50 khz, p /4dqpsk modulated signal input. 3. d f = 100 khz, p /4dqpsk modulated signal input. gaas analog mmic (dual amplifier) absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) condition i dd (ma) part number v dd1 (v) v dd2 (v) v dd3 (v) p in (dbm) p t note (w) t stg ( c) t a ( c) v dd1 (v) v dd2 (v) v dd3 (v) f (ghz) typ. max. m pg2126tb +6 - - +6 - +6 +4 - 4 0.14 - 35 to +150 - 30 to 90 +3.6 - - +3.6 - +3.6 0.93 to 0.96 1.429 to 1.453 16 28 20 32 m pg2304tk +4 -- +10 0.125 - 65 to +150 - 30 to +85 +2.8 -- 0.68 to 0.77 1.27 to 1.37 3.5 4.0 note mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass pwb, t a = +85 c
selection guide PG10195EJ01V0PF 15 electrical characteristics (t a = +25 c) i agc g p gcr p adj1 p adj2 p out (ma) (db) (db) (dbc) (dbc) (dbm) typ. max. typ. max. typ. max. typ. max. typ. max. typ. package part number -- 14 17 --- 60 - 55 - 70 - 65 +8 6smm m pg2115tb electrical characteristics (t a = +25 c) i agc (ma) g p (db) gcr (db) p adj1 note2 (dbc) p adj2 note3 (dbc) p out (dbm) typ. max. typ. max. typ. max. typ. max. typ. max. typ. package part number 0.2 0.5 26 30 35 40 - 60 - 55 - 70 - 65 +8 6smm m pg2106tb 0.2 0.5 24 27 35 40 - 60 - 55 - 70 - 65 +8 6smm m pg2110tb 0.2 0.5 26 28 35 40 - 60 - 55 - 70 - 65 +12 6smm m pg2128tb 0.2 0.5 28 30 37 42 - 60 - 55 - 70 - 65 +10 6smm m pg2130tb electrical characteristics (t a = +25 c) g p (db) isl (db) p adj1 (dbc) p adj2 (dbc) p out (dbm) typ. max. min. typ. typ. max. typ. max. typ. package part number 16 26 18 28 - - - - - 60 - 60 - 55 - 55 - 70 - 70 - 65 - 65 +8 +8 6smm m pg2126tb 0 +23035 ----- 6l2mm m pg2304tk
selection guide PG10195EJ01V0PF 16 gaas analog mmic (power amplifier) absolute maximum ratings(t a = +25 c) electrical characteristics (t a = +25 c) condition part number application v cc1 (v) v cc2 (v) v cont (v) v enable (v) i cc (ma) p in (dbm) p d (mw) t stg ( c) t a ( c) v cc1 (v) v cc2 (v) v cont (v) v enable (v) m pg2301tq bluetooth tm 5 5 3.6 3.6 400 10 700 - 55 to +150 - 40 to +85 3.3 3.3 3.3 3.3 dbs if switch absolute maximum ratings (t a = +25 c) electrical characteristics (t a = +25 c) condition l ins (db) d l ins (db) part number function v cont (v) p t (w) t a ( c) t stg ( c) f (ghz) typ. max. typ. max. m pg181gr dbs 2 2 if switch - 6 to +6 2 - 40 to +85 - 65 to +150 0.95 to 2.15 5.0 7.0 0.8 1.5 m pg183gr dbs 4 2 if switch - 1 to +6 2 - 40 to +85 - 65 to +150 0.95 to 2.15 7.0 9.0 1.5 3.0 m pg186tq dbs spdt if switch - 1 to +6 2 - 40 to +85 - 65 to +150 0.95 to 2.15 1.5 2.5 0.4 1.0 m pg187gr dbs twin spdt if switch - 1 to +6 2 - 40 to +85 - 65 to +150 0.95 to 2.15 1.8 3.0 0.4 1.2 m pg188gr dbs 4 2 if switch - 1 to +6 2 - 40 to +85 - 65 to +150 0.95 to 2.15 7.0 9.0 1.5 3.0 gaas switch mmic absolute maximum ratings (t a = +25 c) part number function v cont (v) p t (w) p in (dbm) t c ( c) t stg ( c) m pg152ta l-band spdt switch - 6 to + 60.4 + 31 - 50 to + 80 - 65 to + 150 m pg153tb l-band spdt switch - 6 to + 60.15 + 33 - 45 to + 85 - 55 to + 150 m pg154tb l-band spdt switch - 6 to + 60.15 + 31 - 45 to + 85 - 55 to + 150 m pg155tb l-band spdt switch - 6 to + 60.15 + 34 - 45 to + 85 - 55 to + 150 m pg158tb l-band spdt switch - 6 to + 60.15+28 - 45 to + 85 - 55 to + 150 m pg2006tb l-band 1.8 v spdt switch - 6 to + 60.15+23 - 45 to + 85 - 55 to + 150 m pg2008tk l-band small spdt switch - 6 to + 60.15+28 - 45 to + 85 - 55 to + 150 m pg2009tb l-band high power spdt switch - 6 to + 60.15+36 - 45 to + 85 - 55 to + 150 m pg2010tb l-band high power single control spdt switch + 60.15+36 - 45 to + 85 - 55 to + 150 m pg2012tb l-band single control switch + 60.15+28 - 45 to + 85 - 55 to + 150 m pg2012tk l-band single control switch +6 0.15 +28 - 45 to + 85 - 55 to + 150 note @ f = 2 ghz, c x = 2 pf
selection guide PG10195EJ01V0PF 17 electrical characteristics (t a = +25 c) i cc (ma) p out1 p out2 min. max. f (ghz) g p (db) min. max. min. max. gcr (db) pae (%) package part number 110 130 2.4 to 2.5 23 +21 +24.5 - +1 23 50 10tson m pg2301tq electrical characteristics (t a = +25 c) isl (db) rl out (db) min. typ. min. typ. condition package part number 30 33 13 16 @ v cont = +5v/0v 16htssop m pg181gr 24 26.5 10 14 @ v cont = +5v/0v 16htssop m pg183gr 45 48 10 15 @ v cont = +5v/0v 10tson m pg186tq 42 44 10 15 @ v cont = +5v/0v 16htssop m pg187gr 29 32 10 15 @ v cont = +5v/0v 16htssop m pg188gr electrical characteristics (t a = +25 c) condition l ins (db) rl in (db) p in(1db) (dbm) t sw (ns) isl (db) package part number f (ghz) typ. max. min. typ. condition typ. typ. min. typ. 0.1 to 2.5 0.60 1.0 11 - @ 2 ghz, v cont = +3 v/0 v +30 30 20 22 6mm m pg152ta 0.1 to 2.5 0.70 0.9 11 15 @ 2 ghz, v cont = +3 v/0 v +33 30 10 13 6smm m pg153tb 0.1 to 2.5 0.65 0.9 11 15 @ 2 ghz, v cont = +3 v/0 v +30 30 18 note 21 note 6smm m pg154tb 0.1 to 2.5 0.75 1.0 11 15 @ 2 ghz, v cont = +3 v/0 v +34 30 13 16 6smm m pg155tb 0.1 to 2.5 0.40 0.65 13 19 @ 2 ghz, v cont = +3 v/0 v +26.5 50 22 27 6smm m pg158tb 0.5 to 2.5 0.30 0.55 10 21 @ 1 ghz, v cont = +1.8 v/0 v +20 50 25 24 6smm m pg2006tb 0.5 to 2.5 0.40 0.70 13 20 @ 1 ghz, v cont = +2.8 v/0 v +25 50 22 25 6l2mm m pg2008tk 0.5 to 2.5 0.25 0.45 15 20 @ 1 ghz, v cont = +2.8 v/0 v +34 @ p in(0.1 db) 150 24 28 6smm m pg2009tb 0.5 to 2.5 0.25 0.45 15 20 @ 1 ghz, v cont = +2.8 v/0 v +33 @ p in(0.1 db) 1 ( m s) 24 28 6smm m pg2010tb 0.5 to 2.5 0.27 0.45 15 20 @ 1 ghz, v cont = +2.8 v/0 v +24 300 24 28 6smm m pg2012tb 0.5 to 2.5 0.27 0.45 15 20 @ 1 ghz, v cont = +2.8 v/0 v +24 300 24 30 6l2mm m pg2012tk
selection guide PG10195EJ01V0PF 18 multi-chip module for catv part number function remark package wideband amplifier for 50 m to 860 mhz catv push-pull amp. mc-78xx series wideband amplifier for 50 m to 860 mhz catv power doubler amp. to need some information, contact your nearby sales office. 7-pin special package
selection guide PG10195EJ01V0PF 19 4. application note ? x to xu-band dbs converter rf in if out 2 2 if sw if-amp. if-amp. ne3210s01 ne4210s01 ne4210s01 pc2712tb pc3215tb pg181gr 2sc5508 pc2709tb m m m m ? s-band mmds (rx block) ne34018 ne38018 ne34018 ne38018 ? gps antenna ne34018 ne38018 ne34018 ne38018 pc2749tb 2sc5185 m ? satellite radio ne34018 ne38018 ne34018 ne38018 ne38018
selection guide PG10195EJ01V0PF 20 5. package dimensions fet (unit: mm) 18 (4-pin super minimold) 39 (4-pin minimold) 83a, 83b 84, 84a, 84c s01 m01 (6-pin super minimold) 0.90.1 0.15 +0.1 C0.05 0.3 0 to 0.1 3 1.30 2.00.2 1.25 0.65 0.60 4 2 1 2.10.2 1.250.1 0.65 0.65 0.4 +0.1 C0.05 0.3 +0.1 C0.05 0.3 +0.1 C0.05 0.3 +0.1 C0.05 2.90.2 (1.8) (1.9) 0.95 2 1 3 4 0.85 0.6 +0.1 C0.06 0.4 +0.1 C0.05 0.4 +0.1 C0.05 0.4 +0.1 C0.05 2.8 +0.2 C0.3 1.5 +0.2 C0.1 5? 5? 0.8 0.16 +0.1 C0.06 0 to 0.1 1.1 +0.2 C0.1 5? 5? 1.880.3 0.50.1 1.880.3 4.0 min. 4.0 min. 4 2 3 4.0 min. 4.0 min. 1 1.00.1 1.45 max. 0.1 +0.07 C0.03 ( - sl) 1.7min. ( - t1) 1.00.2 l 1.7 max. 0.1 l 1.780.2 1.780.2 0.5 typ. l 4 2 3 1 0.5 typ. 0.5 typ. 2.00.2 4 0.65 typ. 3 2 1 2.00.2 2.00.2 1.90.2 1.6 4.00.2 0.1250.05 1.5 max. 0.90.1 0.7 0 to 0.1 0.15 +0.1 C0.05 0.2 +0.1 C0.05 2.00.2 1.3 0.65 0.65 1.250.1 2.10.1 0.1 min. power fet 1/2 (unit: mm) 75 77 95 2.3 1.13 0.9 max. gate drain 0.5 source 2.7 3.0 min. 2.3 9.8 max. 2.7 7.0 1.8 f 17.50.5 14.3 source gate 1.00.1 6.350.4 4.0 min. both leads drain r1.25, 2 places 2.5 8.90.4 3.8 max. 1.0 0.2 max. 2.260.4 0.1 +0.06 C0.02 7.20.2 4.5 max. 0.1 0.2 max. 2.10.15 1.0 14.00.3 5.90.2 4.0 min. 0.70.1 gate 2.50.3 dia source 18.5 max. drain
selection guide PG10195EJ01V0PF 21 power fet 2/2 (unit: mm) 96/99 t-61 t-65 t-78 t-86 t-92m 79a t-92 6.00.2 0.1 1.2 0.2 max. 1.70.15 5.0 max. 4.0 min. both leads source gate drain 0.60.1 5.20.3 11.00.3 15.00.3 1.00.1 4.30.2 4.0 2.20.3 2 places f 5.0 max. 0.2 max. 12.0 10.7 0.1 +0.05 C0.01 2.60.15 1.6 0.50.1 gate side indicator 12.9 3.2 2.5 min. 21.00.3 17.0 drain source 6.450.05 1.6r0.1 2 places 1.5 chamfer 4 places gate c1.0 4places r1.2 4places source 0.50.1 17.40.2 2.5 min. 2.5 min. 2.4 5.6 20.40.2 24.00.3 drain gate 8.00.1 16.0 16.0 5.0 max. 2.40.2 0.1 +0.1 C0.05 0.2 max. 1.6 1.80.1 0.2 max. 3.00.2 90.3 8.250.15 gate 9.70.13 drain 130.1 16.50.13 r 0.65 2.740.1 source 2.40.2 1.80.2 4.7 max. 19.40.4 11.40.3 5.70.3 2.40.3 0.1 d2 d1 g2 g1 ss 45? r1.20.3 14.50.3 1.40.2 7.80.2 20.90.3 24.50.3 2.40.2 4.75 max. 1.80.2 4.00.3 31.60.3 s 8.0 17.40.3 9.70.3 35.20.3 2.40.3 s r1.20.3 d1 d2 g1 g2 45? 4.00.3 1.40.3 30.40.25 s 8.00.2 0.60.3 17.40.15 9.70.2 35.20.25 23.90.3 2.60.3 s 4Cr1.3 4Cc1.5 d1 d2 g1 g2 45? 2.40.2 6.0 max. 2.10.3 0.90.2 0.20.1 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain
selection guide PG10195EJ01V0PF 22 mmic (unit: mm) 4 ceramic 8 ceramic (t-31) 6l2mm (6-pin lead-less minimold (1511 pkg) for gaas mmic) 6mm (6-pin minimold) 6smm (m01) (6-pin super minimold) 8ssop (8-pin plastic ssop (4.45 mm (175))) 16htssop (16-pin plastic htssop) 10tson (10-pin plastic tson) (0.48) (0.48) (0.96) 1.50.1 1.30.1 1.10.1 0.550.05 0.11 +0.1 C0.05 0.16 +0.1 C0.05 1.48 max. 0.10.06 0.7 +0.2 C0.1 4.1 min. 1 2 4 3 0.60.06 4.5 max. 0.40.06 4.6 max. 4.1 min. 1.7 max. 0.2 +0.05 C0.02 3.80.2 1.270.1 1.270.1 10.6 max. 10.6 max. 5 678 4C0.6 432 1 4C0.4 0.90.1 0.7 0 to 0.1 0.15 +0.1 C0.05 0.2 +0.1 C0.05 2.00.2 1.3 0.65 0.65 1.250.1 2.10.1 0.1 min. 1.50.1 0.575 max. 0.10 m 1.8 max. 0.10.1 0.3 +0.10 C0.05 detail of lead end 3? +7? C3? 0.65 8 5 1 4 2.90.1 4.940.2 0.50.2 0.870.2 3.20.1 0.15 +0.10 C0.05 0.15 2.400.15 2.200.1 2.250.1 (0.6 max.) (0.125) (1.95) (0.95) (0.3) 2.550.15 0.400.05 0.180.05 (1.70) (0.35) (bottom view) (1.5) 0.90.2 0.200.10 (0.4) (2.7) (0.5) (1.8) (0.1) (2.5) 5.20.2 5.50.3 6.40.3 0.650.1 0.200.10 16 9 1 8 2.90.2 0.95 0.95 1.9 4 3 5 2 6 1 0.3 +0.1 C0.05 2.8 +0.2 C0.3 1.5 +0.2 C0.1 0.8 0.130.1 1.1 +0.2 C0.1 0 to 0.1 0.2 min.
selection guide PG10195EJ01V0PF 23 6. index part number page part number page part number page 3sk299 ne321000 ne3210s01 ne32500 ne34018 ne38018 ne4210s01 ne429m01 ne52418 ne6500179a ne6500379a ne6500496 ne6501077 ne650r279a ne650r479a ne6510179a ne6510379a ne651r479a ne71300 11 9 7 9 7 7 7 7 9 13 13 13 13 13 13 13 13 13 9 ne71383b ne72218 ne722s01 ne850r599a ne8500199 ne8500295-4 ne8500295-6 ne8500295-8 ne960r275 ne960r575 nes1823m-240 mc-78xx series m pg152ta m pg153tb m pg154tb m pg155tb m pg158tb m pg181gr m pg183gr 7 11 11 13 13 13 13 13 13 13 13 18 16 16 16 16 16 16 16 m pg186tq m pg187gr m pg188gr m pg2006tb m pg2008tk m pg2009tb m pg2010tb m pg2012tb m pg2012tk m pg2106tb m pg2110tb m pg2115tb m pg2126tb m pg2128tb m pg2130tb m pg2301tq m pg2304tk 16 16 16 16 16 16 16 16 16 14 14 14 14 14 14 16 14
selection guide PG10195EJ01V0PF 24 7. reference document name document no. nec semiconductor device reliability/quality control system note c10983e quality grades on nec semiconductor devices note c11531e semiconductor selection guide - products and packages - note x13769e note published by nec corporation 8. web site information the rf and microwave homepage has many documents avaiable for viewing or download. please see our web site. the our web site address is as follows; rf and microwave devices homepage: http://www.csd-nec.com/microwave/index.html homepage-related inquiries e-mail: webmaster@csd-nec.com
document no. PG10195EJ01V0PF (1st edition) (previous no. p10747ejgv0sg00) date published september 2002 cp(k) ? nec corporation 1996 ? nec compound semiconductor devices 2002 printed in japan nec compound semiconductor devices hong kong limited hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-528-0301 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-528-0302 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-01 fax: +49-211-6503-487 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0209 nec compound semiconductor devices, ltd. 5th sales group, sales division tel: +81-3-3798-6372 fax: +81-3-3798-6783 e-mail: salesinfo@csd-nec.com business issue nec compound semiconductor devices, ltd. http://www.csd-nec.com/ sales engineering group, sales division e-mail: techinfo@csd-nec.com fax: +81-44-435-1918 technical issue

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