1 - 5 ? 2000 ixys all rights reserved c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) 98510c (7/00) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 150 c3ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 1.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c60a i c90 t c = 90 c30a i cm t c = 25 c, 1 ms 120 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 60 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead and tab temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque, to-247 ad 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g hiperfast tm igbt with diode to-268 (ixgt) g e c (tab) features international standard package moderate frequency igbt and antiparallel fred in one package high current handling capability newest generation hdmos tm process mos gate turn-on - drive simplicity applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages space savings (two devices in one package) high power density optimized v ce(sat) and switching speeds for medium frequency application v ces = 600 v i c25 = 60 a v ce(sat) = 1.8 v t fi(typ) = 100 ns ixys reserves the right to change limits, test conditions, and dimensions. ixgh 30n60bd1 ixgt 30n60bd1
2 - 5 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 25 s pulse test, t 300 s, duty cycle 2 % c ies 2700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 240 pf c res 50 pf q g 110 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 22 nc q gc 40 nc t d(on) 25 ns t ri 30 ns t d(off) 130 220 ns t fi 100 190 ns e off 1.0 2.0 mj t d(on) 25 ns t ri 35 ns e on 1.0 mj t d(off) 200 ns t fi 230 ns e off 2.5 mj r thjc 0.62 k/w r thck (to-247 ad) 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, pulse test t j = 150 c 1.6 v t 300 s, duty cycle d 2 % 2.5 v i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s6a t rr v r = 100 v t j =100 c 100 ns i f = 1 a; -di/dt = 100 a/ s; v r = 30 v 25 ns r thjc 0.9 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 4.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 150 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 4.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixgh 30n60bd1 ixgt 30n60bd1 to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-268aa (d 3 pak) dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 5 ? 2000 ixys all rights reserved fig. 1. saturation voltage characteristics fig. 2. extended output characteristics fig. 3. saturation voltage characteristics fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6.temperature dependence of bv dss & v ge(th) ixgh 30n60bd1 ixgt 30n60bd1
4 - 5 ? 2000 ixys all rights reserved fig. 7. dependence of e off and e off on i c . fig. 8. dependence of e off on r g . fig. 9. gate charge fig. 10. turn-off safe operating area fig. 11. igbt transient thermal resistance ixgh 30n60bd1 ixgt 30n60bd1
5 - 5 ? 2000 ixys all rights reserved ixgh 30n60bd1 ixgt 30n60bd1 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 14 peak reverse current i rm versus -di f /dt fig. 13 reverse recovery charge q r versus -di f /dt fig. 12 forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 15 dynamic parameters q r , i rm versus t vj fig. 16 recovery time t rr versus -di f /dt fig. 17 peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 18 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 t vj =25c t vj =100c t vj =150c
|
