790a phase control thyristors hockey puk version st650c..l series 1 bulletin i25203 rev. b 04/00 www.irf.com features center amplifying gate metal case with ceramic insulator international standard case to-200ac (b-puk) typical applications dc motor control controlled dc power supplies ac controllers i t(av) 790 a @ t hs 55 c i t(rms) 1557 a @ t hs 25 c i tsm @ 50hz 10100 a @ 60hz 10700 a i 2 t@ 50hz 510 ka 2 s @ 60hz 475 ka 2 s v drm /v rrm 2000 to 2400 v t q typical 200 s t j - 40 to 125 c parameters st650c..l units major ratings and characteristics case style to-200ac (b-puk)
st650c..l series 2 bulletin i25203 rev. b 04/00 www.irf.com electrical specifications voltage ratings voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t j = t j max vvma 20 2000 2100 st650c..l 22 2200 2300 80 24 2400 2500 i t(av) max. average on-state current 790 (324) a 180 conduction, half sine wave @ heatsink temperature 55 (85) c double side (single side) cooled i t(rms) max. rms on-state current 1857 dc @ 25 c heatsink temperature double side cooled i tsm max. peak, one-cycle 10100 t = 10ms no voltage non-repetitive surge current 10700 a t = 8.3ms reapplied 8600 t = 10ms 100% v rrm 9150 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 510 t = 10ms no voltage initial t j = t j max. 475 t = 8.3ms reapplied 370 t = 10ms 100% v rrm 347 t = 8.3ms rea pplied i 2 t maximum i 2 t for fusing 5100 ka 2 s t = 0.1 to 10ms, no voltage reapplied v t(to) 1 low level value of threshold voltage v t(to) 2 high level value of threshold voltage r t1 low level value of on-state slope resistance r t2 high level value of on-state slope resistance v tm max. on-state voltage 2.07 v i pk = 1700a, t j = t j max, t p = 10ms sine pulse i h maximum holding current 600 i l typical latching current 1000 1.04 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.61 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.35 (i > x i t(av) ),t j = t j max. parameter st650c..l units conditions 1.13 (i > x i t(av) ),t j = t j max. on-state conduction ka 2 s v m ? ma t j = 25 c, anode supply 12v resistive load
st650c..l series 3 bulletin i25203 rev. b 04/00 www.irf.com di/dt max. non-repetitive rate of rise gate drive 20v, 20 ? , t r 1s of turned-on current t j = t j max, anode voltage 80% v drm gate current 1a, di g /dt = 1a/s v d = 0.67% v drm , t j = 25 c i tm = 750a, t j = t j max, di/dt = 60a/s, v r = 50v dv/dt = 20v/s, gate 0v 100 ?, t p = 500s parameter st650c..l units conditions switching 1000 a/s t d typical delay time 1.0 t q typical turn-off time 200 s dv/dt maximum critical rate of rise of off-state voltage i drm max. peak reverse and off-state i rrm leakage current blocking 500 v/ st j = t j max. linear to 80% rated v drm parameter st650c..l units conditions 80 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 10.0 t j = t j max, t p 5ms p g(av) maximum average gate power 2.0 t j = t j max, f = 50hz, d% = 50 i gm max. peak positive gate current 3.0 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage t j = - 40 c ma t j = 25 c t j = 125 c t j = - 40 c vt j = 25 c t j = 125 c i gd dc gate current not to trigger 10 ma parameter st650c..l units conditions 20 5.0 triggering typ. max. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - v gd dc gate voltage not to trigger 0.25 v max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied t j = t j max max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12v anode-to-cathode applied v gt dc gate voltage required to trigger i gt dc gate current required to trigger w v t j = t j max, t p 5ms
st650c..l series 4 bulletin i25203 rev. b 04/00 www.irf.com t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thj-hs max. thermal resistance, 0.073 dc operation single side cooled junction to heatsink 0.031 dc operation double side cooled r thc-hs max. thermal resistance, 0.011 dc operation single side cooled case to heatsink 0.006 dc operation double side cooled f mounting force, 10% 14700 n (1500) (kg) wt approximate weight 255 g parameter st650c..l units conditions k/w c case style to - 200ac (b-puk) see outline table k/w thermal and mechanical specification single side double side single side double side 180 0.009 0.009 0.006 0.006 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 k/w t j = t j max. 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036 sinusoidal conduction rectangular conduction conduction angle units conditions ? r thj-hs conduction (the following table shows the increment of thermal resistence r thj-hs when devices operate at different conduction angles than dc) 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - l = puk case to-200ac (b-puk) 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 8 - critical dv/dt: none = 500v/sec (standard selection) l = 1000v/sec (special selection) ordering information table device code 5 1 2 3 4 st 65 0 c 24 l 1 7 6 8
st650c..l series 5 bulletin i25203 rev. b 04/00 www.irf.com outline table two places pin receptacle amp. 60598-1 0.7 (0.03) min. 34 (1.34) dia. max. 53 (2.09) dia. max. 58 .5 (2.3 ) d i a. m ax . 2 holes dia. 3.5 (0.14) x 2.5 (0.1) deep 4.7 (0.18) 27 (1.06) m ax . 0.7 (0.03) min. 6.2 (0.24) min. 20 5 36.5 (1.44) crepage distance 36.33 (1.430) min. strike distance 17.43 (0.686) min. case style to-200ac (b-puk) all dimensions in millimeters (inches) fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 60 70 80 90 10 0 11 0 12 0 13 0 0 100 200 300 400 500 600 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st6 50c ..l se rie s (single side c oo le d) r (d c ) = 0.073 k/w thj-hs 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 400 30 60 90 120 180 av era g e o n-s ta te c urren t (a ) conduction angle maxim um allowable heatsink temperature ( c) st 650c ..l se rie s (single side c oo le d) r (d c) = 0 .07 3 k/w th j-hs quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
st650c..l series 6 www.irf.com bulletin i25203 rev. b 04/00 fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5- on-state power loss characteristics fig. 6- on-state power loss characteristics fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 dc 30 60 90 120 180 average on-state current (a) conduction period maxim um allow able heatsink tem perature ( c) st650c..l series (d ouble side c oole d) r (d c ) = 0.031 k/w th j-hs 0 250 500 750 1000 1250 1500 1750 2000 0 100 200 300 400 500 600 700 800 rms lim it conduction angle 180 120 90 60 30 m a xim um a vera g e o n-sta te po w er loss (w ) average on-state current (a) st650c..l series t = 125 c j 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 200 400 600 800 1000 1200 1400 dc 180 120 90 60 30 rms lim it conduction period m axim um average on-state pow er loss (w) a ve ra g e o n -sta te c urre nt (a) st650c ..l series t = 125 c j 4000 5000 6000 7000 8000 9000 10000 11000 12000 0.01 0.1 1 peak half sine w ave o n-state current (a) pulse train duration (s) m a x im um n o n re p etitive s urg e c urre nt ve rsus p ulse tra in d ura tion . c o ntrol o f c onduction m ay not be m aintained. initia l t = 125 c no voltage reapplied rate d v re applied rrm j st650c..l series 4000 5000 6000 7000 8000 9000 10000 110100 number o f equal amp litud e h alf cycle current pulses (n) peak half sine wave on-state current (a) a t any r ated loa d c ond itio n an d w ith rated v applied follow ing surge . rr m initia l t = 12 5 c @ 60 hz 0 .00 83 s @ 50 hz 0 .01 00 s j st650 c..l serie s 20 30 40 50 60 70 80 90 10 0 11 0 12 0 13 0 0 100 200 300 400 500 600 700 800 30 60 90 120 180 av era g e o n-sta te c urre nt (a) conduction angle maximum allowable heatsink tem perature ( c) st 650c ..l se ries (double side cooled) r (d c ) = 0.0 31 k/w thj-h s
st650c..l series 7 www.irf.com bulletin i25203 rev. b 04/00 fig. 9 - on-state voltage drop characteristics fig. 11 - gate characteristics fig. 10 - thermal impedance z thj-hs characteristics 0.001 0.01 0.1 0.001 0.01 0.1 1 10 s q ua re w a ve p ulse dura tion (s) thj- hs stea d y sta te va lue r = 0.073 k/w ( s in g l e s id e c o o le d ) r = 0.031 k/w (double side cooled) (dc o peratio n) thj-hs thj-hs transie nt th erm al im pe danc e z (k/w ) st650c ..l se ries 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vg d ig d (b) (a) tj = 25 c tj=125 c tj=-40 c (2) (3) insta ntan eo us g a te c urren t (a) insta nt ane ous g a te volta g e (v ) a) recom mended load line for b ) re c o m m e n d e d lo a d li n e fo r <=30% rate d di/dt : 1 0v, 10ohm s frequency limited by pg(av) rated di/dt : 20v, 10ohm s; tr<=1 s tr<=1 s (1) (1) pg m = 10w , tp = 4m s (2) pg m = 20w , tp = 2m s (3) pg m = 40w , tp = 1m s (4) pg m = 60w , tp = 0.66m s rectangular gate pulse st6 50c..l se rie s (4) 100 1000 10000 0.511.52 2.53 instantaneous on-state current (a) instan tan eous o n -stat e v oltage (v ) st650c..l series t = 25 c j t = 125 c j
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