symbol v ds v gs i dm t j , t stg symbol typ ma x 28 34 57 71 r jl 16 23 junction and storage temperature range c -55 to 150 3.7 w t a =70c 2.4 power dissipation t a =25c p d maximum units parameter 30 c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w pulsed drain current b 60 a t a =70c 12 continuous drain current a t a =25c i dsm 15 ao4476 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 15a (v gs = 10v) r ds(on) < 10.5m ? (v gs = 10v) r ds(on) < 17m ? (v gs = 4.5v) general description the ao4476 uses advanced trench technology to provide excellent r ds(on) , low gate charge.this device is suitable for use as a high side switch in smps and general purpose applications. standard product a o4476 is pb-free (meets rohs & sony 259 specifications). d s g soic-8 g s s s d d d d alpha & omega semiconductor, ltd.
ao4476 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 0.1 ? ? q g (10v) 18 nc q g (4.5v) 8.5 nc q gs 3.1 nc q gd 4.8 nc t d(on) 6ns t r 3.8 ns t d(off) 20 ns t f 3.8 ns t rr 28 ns q rr 21 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =15a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1 ? , r gen =3 ? turn-off fall time turn-on delaytime m ? v gs =4.5v, i d =12a i s =1a,v gs =0v v ds =5v, i d =15a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =15a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =15a reverse transfer capacitance i f =15a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 ms pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the soa curve provides a single pulse rating. rev1: may 2006 alpha & omega semiconductor, ltd.
ao4476 typical electrical and thermal characteristics 0 10 20 30 40 50 60 012345 v ds (volts) figure 1: on-region characteristics i d (a) 10v 4.5v v gs =3.5v 7v 4v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 6 9 12 15 18 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 -50 -20 10 40 70 100 130 160 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =15a v gs =10 v v gs =4.5 v gs =4.5 v gs =10 v 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =15a 25 c 125c alpha & omega semiconductor, ltd.
ao4476 typical electrical and thermal characteristic s 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 300 600 900 1200 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristic s capacitance (pf) c iss 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note g) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance c oss c rss 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 ja .r ja r ja =34c/w alpha & omega semiconductor, ltd.
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