p-channel enhancement mode field AO4701 symbol unit s v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol unit s r jl r jl pulsed drain current b junction and storage temperature range 2 w schottky reverse voltage 30 1.44 1.44 power dissipation max c/w c/w mosfet -30 12 -5 -4.2 -30 2 i f 42 thermal characteristics schottky 62.5 40 48 74 continuous drain current a gate-source voltage schottky drain-source voltage parameter -55 to 150 a absolute maximum ratings t a =25c unless otherwise noted p d i d 4.4 a 3.2 30 continuous forward current a parameter: thermal characteristics mosfet maximum junction-to-ambient a t 10s -55 to 150 typ maximum junction-to-ambient a steady-state 110 maximum junction-to-lead c steady-state 35 62.5 maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state 110 maximum junction-to-lead c steady-state pulsed forward current b 72 37 49 r ja features v ds (v) = -30v i d = -5a r ds(on) < 49m ? (v gs = 10v) r ds(on) < 64m ? (v gs = 4.5v) r ds(on) < 120m ? (v gs = 2.5v) schottky v ds (v) = 30v, i f = 3a, v f =0.5v@1a the AO4701 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. g d s a k g s a a d d k k 1 2 3 4 8 7 6 5 soic-8 effect transistor with schottky diode general description www.freescale.net.cn 1 / 8
AO4701 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.7 -1 -1.3 v i d(on) -25 a 42.5 49 t j =125c 74 54 64 m ? 83 120 m ? g fs 711 s v sd -0.75 -1 v i s -3 a c iss 952 pf c oss 103 pf c rss 77 pf r g 5.9 ? q g 9.5 nc q gs 2nc q gd 3.1 nc t d(on) 12 ns t r 4ns t d(off) 37 ns t f 12 ns t rr 21 ns q rr 13 nc schottky parameters v f 0.45 0.5 v 0.007 0.05 3.2 10 12 20 c t 37 pf gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =-5a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-4a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3.6 ? , r gen =6 ? m ? v gs =-4.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-2.5v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-10v, i d =-5a reverse transfer capacitance forward voltage drop i f =1.0a i rm maximum reverse leakage current v r =30v ma v r =30v, t j =125c v r =30v, t j =150c junction capacitance v r =15v a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the www.freescale.net.cn 2 / 8
AO4701 typical electrical and thermal characteristics 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2v -2.5v -3v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 40 60 80 100 120 0246810 -i d (a) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-2.5v v gs =-10v v gs =-4.5v 10 30 50 70 90 110 130 150 170 190 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-2.5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-2a i d =-5a www.freescale.net.cn 3 / 8
AO4701 5 3 1.0 1.2 s tic s 5 0 175 p eratur e www.freescale.net.cn 4 / 8
AO4701 typical electrical and thermal characteristics 0 1 2 3 4 5 024681012 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 1 0 m s 1ms 0 .1 s 1 s 10s dc r ds(on) limite d t j(max) =150c t a =25c v ds =-15v i d =-5a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s www.freescale.net.cn 5 / 8
AO4701 typical electrical and thermal characteristics: schottky 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 50 100 150 200 250 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (ma) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /(t on +t off ) t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =1a 25c i f =3a v r =30v 125c t on t off p d www.freescale.net.cn 6 / 8
q e q h l aaa b e1 c e d a a2 a1 symbols 0.050 bsc 0.50 1.27 8 0.10 0.10 5.00 6.20 4.00 0.51 0.25 --- 1.55 --- 5.80 0 0.25 0.40 --- --- --- --- --- 1.27 bsc 0.19 3.80 4.80 1.45 0.33 --- 0.00 --- --- --- --- 1.50 1.45 --- --- 0.228 0.010 0.016 --- 0 --- --- --- --- 0.057 0.007 0.013 --- 0.150 0.189 0.000 --- --- --- --- 0.059 0.057 --- 0.244 8 0.020 0.050 0.004 0.010 0.157 0.197 0.061 0.020 --- 0.004 dimensions in inches dimensions in millimeters max min nom min nom max so-8 package data note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.10 mm (4 mil) unless otherwise specified 3. coplanarity : 0.10 mm 4. dimension l is measured in gage plane recommended land pattern package marking description note: logo - aos logo 4701 - part number code. f - fab location a - assembly location y - year code w - week code. l n - assembly lot code so-8 part no. code unit: mm rev. a AO4701 part no. code 4701 www.freescale.net.cn 7 / 8
so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation www.freescale.net.cn 8 / 8
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