dsa 70 c 150 hb schottky diode gen 2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 420 i a v f 0.90 r 0.70 k/w v r = 1 2 3 min. 35 t = 10 ms applications: v rrm v 150 0.68 t vj vc = t vj c =ma 7.5 package: part number v r = t vj =c i f =a v t c = 150c d = p tot 215 w t c c = t vj 175 c -55 v i rrm = = 150 35 35 t vj = 45c dsa 70 c 150 hb v a 150 v 150 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.06 t vj c =25 c j j unction capacitance v= v; 24 t 125 v f0 v 0.53 t vj = 175c r f 4.9 f = 1 mhz = c 25 m v 0.77 t vj =c i f =a v 35 0.94 i f =a 70 i f =a 70 2x threshold voltage slope resistance for power loss calculation only backside: cathode (50 hz), sine v f = 0.77 v housing: high performance schottky diode low loss and soft recovery common cathode to-247 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj ma 226 pf thermal resistance junction to case thjc rectangular 0.5 very low vf extremely low switching losses low irm values improved thermal behaviour high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters fav average forward current fav 125 ixys reserves the right to change limits, conditions and dimensions. 20100531a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 70 c 150 hb i rms a per terminal 50 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dsa 70 c 150 hb 506708 tube 30 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking d s a 70 c 150 hb part number diode schottky diode low vf common cathode to-247ad (3) = = = 1 ) marking on product DSA70C150HB current rating [a] reverse voltage [v] = = = = 1) i rms is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . in case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increased by connecting the backside. ixys reserves the right to change limits, conditions and dimensions. 20100531a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 70 c 150 hb s ? p ? p1 d2 d1 e1 4 123 l l1 2x b2 3x b b4 2x e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. 20100531a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 70 c 150 hb 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 70 0 40 80 120 160 0.0001 0.001 0.01 0.1 1 10 100 10 30 50 02040 0 10 20 30 40 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 0 10 20 30 40 50 60 0 40 80 120 160 0 100 200 300 400 500 600 700 800 900 1000 dc 25c 50c 75c 100c 125c single pulse t vj =175c 150c i f [a] v f [v] i r [ma] v r [v] v r [v] c t [pf] t c [c] i f(av) [a] p (av) [w] t [ms] note: all curves are per diode fig. 1 maximum forward voltage drop characteristics fig. 2 typ. reverse current i r vs. reverse voltage v r fig. 3 typ. junction capacitance c t vs. reverse voltage v r fig. 4 average forward current i f(av) vs. case temperature t c fig. 5 forward power loss characteristics fig. 6 transient thermal impedance junction to cas e i f(av) [a] t vj = 150c 125c 25c t vj =25c d= 0.5 d = dc 0.5 0.33 0.25 0.17 0.08 z thjc [k/w] ixys reserves the right to change limits, conditions and dimensions. 20100531a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
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