10v drive nch mosfet ZDX130N50 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high-speed switching. 3) gate-source voltage v gss guaranteed to be 30v . 4) high package power. ? application switching ? packaging specifications ? inner circuit package bulk code - basic ordering unit (pieces) 500 ZDX130N50 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 500 v gate-source voltage v gss ? 30 v continuous i d ? 13 a pulsed i dp ? 39 a continuous i s 13 a pulsed i sp 39 a avalanche current i as 10 a avalanche energy e as 50 mj power dissipation p d 40 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 tc=25c *3 l 1mh, v dd =50v, r g =25 ? starting tch=25c ? thermal resistance symbol limits unit channel to case rth (ch-c) 3.125 ? c / w parameter type source current (body diode) drain current parameter *2 *1 *1 to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 )( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 )( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 (1) gate (2) drain (3) source ? 1 body diode *3 *3 ?1 (1) (2) (3) 1/5 2011.08- rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
ZDX130N50 symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 500 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =500v, v gs =0v gate threshold voltage v gs (th) 2.5 - 4.5 v v ds =10v, i d =1ma forward transfer admittance l y fs l 2.0 8.5 - s v ds =10v, i d =6.0a input capacitance c iss - 2180 - pf v ds =25v output capacitance c oss - 200 - pf v gs =0v reverse transfer capacitance c rss - 60 - pf f=1mhz turn-on delay time t d(on) - 30 - ns v dd 250v, i d =5.0a rise time t r - 25 - ns v gs =10v turn-off delay time t d(off) - 43 - ns r l =50 ? , r g =10 ? fall time t f -15-ns total gate charge q g -40-nc v dd 250v, i d =5.0a gate-source charge q gs - 11.5 - nc v gs =10v gate-drain charge q gd - 12.5 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.7 v i s =13a, v gs =0v *pulsed 0.52 ? electrical characteristics (ta = 25 ? c) parameter conditions conditions ? parameter static drain-source on-state resistance r ds (on) i d =6.5a, v gs =10v - 0.4 * * * * * * * * * * 2/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
ZDX130N50 ? electrical characteristic curves (ta=25 ? c) 0 1 2 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =5.0v v gs =10.0v v gs =6.0v v gs =8.0v t a =25 c pulsed 0 5 10 15 20 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics( ) v gs =10.0v v gs =6.0v v gs =8.0v v gs =5.0v t a =25 c pulsed 0.01 0.1 1 10 100 0.01 0.1 1 10 100 forward transfer admittance yfs [s] drain current : i d [a] fig.4 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.001 0.01 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 drain currnt : i d [a] gate - source voltage : v gs [v] fig.5 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 source current : is [a] source - drain voltage : v sd [v] fig.6 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.1 1 10 0.01 0.1 1 10 100 static drain - source on - state resistance r ds (on) [m w ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
ZDX130N50 0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 static drain - source on - state resistance r ds (on) [ w ] gate - source voltage : v gs [v] fig.7 static drain - source on - state resistance vs. gate - source voltage i d =13.0a i d =6.5a t a =25 c pulsed 1 10 100 1000 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.8 switching characteristics t d(on) t r t d(off) t f v dd P 250v v gs =10v r g =10 w t a =25 c pulsed 0 2 4 6 8 10 0 10 20 30 40 50 gate - source voltage : v gs [v] total gate charge : qg [nc] fig.9 dynamic input characteristics t a =25 c v dd =250v i d =5.0a pulsed 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 1000 10000 capacitance : c [pf] drain - source voltage : v ds [v] fig.10 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.11 maximum safe operating area tc=25 c single pulse p w = 100 s p w = 1ms p w = 10ms dc operation 4/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
ZDX130N50 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 5/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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