a p09n20bgs-hf advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 200v lower gate charge r ds(on) 460m fast switching characteristics i d 7.8a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 1.8 /w rthj-a 40 /w data & specifications subject to change without notice -55 to 150 halogen-free product 201308131 1 maximum thermal resistance, junction-ambient (pcb mount) 3 parameter rating 200 7.8 5 -55 to 150 parameter + 20 storage temperature range 20 69 a p09n20b series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the lo w connection resistance. g d s g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 200 - - v v gs =10v, i d =5a - - 460 m v gs =4.5v, i d =3a - - 500 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 9 - s i dss drain-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 21 33.6 nc q gs gate-source charge v ds =160v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 14 - nc t d(on) turn-on delay time v dd =100v - 6 - ns t r rise time i d =5a - 9 - ns t d(off) turn-off delay time r g =3.3 -39 - ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 630 1000 pf c oss output capacitance v ds =25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1.3 v t rr reverse recovery time i s =5a, v gs =0v, - 190 - ns q rr reverse recovery charge di/dt=100a/s - 1.7 - uc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. r ds(on) static drain-source on-resistance 2 2 AP09N20BGS-HF
ap09n20bgs-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =5a v gs =10v 0 4 8 12 16 0 8 16 24 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v gs =4.5v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) 0 4 8 12 16 20 0 8 16 24 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4.5v
AP09N20BGS-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 200 400 600 800 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 2 4 6 8 10 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =160v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on)
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