APTLM50H10FRT APTLM50H10FRT ? rev 2 june, 2004 apt website ? http:/ / www.advancedpower.com 1 ? 6 these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. v dss = 500v r dson = 100m ? max @ tj = 25c i d = 37a @ tc = 25c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? high freque nc y power suppl y ? battery charger ? welder power stage ? high power class ?d?amplifier features ? power mos v ? fredfets - low r dson - low input and miller capacitance - low gate c harge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? integrated gate driver ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration ? up to 3kw output power ? 220v/240v ac single phase input ? hi gh switching freq ue nc y (up to 100 khz usi ng a phase shifted zvt controller) ? power factor corrector circuit ? input rectifier bridge benefits ? outsta ndi ng perfor ma nce a t high freq uenc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals for signal and m3 for power for easy pcb mo unting p hase shift operation mosfet power module
APTLM50H10FRT APTLM50H10FRT ? rev 2 june, 2004 apt website ? http:/ / www.advancedpower.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified boost switch static electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 1ma 500 v i d continuo us drain current t c = 25c 50 i dm pulsed drain current 180 a p d total power dissipation 410 w r ds(on) drain ? source on resistance v gs = 10v, i d = 25a 70 r sh shunt resistor value 9.5 10 10.5 m ? p sh shunt resistor value t c = 80c 10 w r thjc junction to case 0.30 c/w boost switch dynamic characteristics symbol characteristic test conditions min typ max unit t r rise time 100 200 t f fall time v in = 15v, v bus = 250v i d = 25a 60 100 ns boost switch body diode characteristics symbol characteristic test conditions min typ max unit i s continuous source current 50 a v sd diode forward voltage v gs = 0v, i s = -50a 1.3 v t rr reverse recovery time i s = -50a, di s /dt = 300a/s 510 ns q rr reverse recovery charge i s = -50a, di s /dt = 300a/s 10 c boost switch driver electrical characteristics symbol characteristic test conditions min typ max unit v5 operating auxiliary supply voltage 13 15 16 v iv5 operating auxiliary supply current fout = 100khz, v5 = 15v 140 ma h5 (max) maxi mum input voltage -0.5 16.5 h5 (th+) positive going threshold voltage v5 = 15v 6.8 8.8 10.8 h5 (th-) negative going threshold voltage v5 = 15v 4.0 5.8 7.4 h5 (hys) hysteresis voltage v5 = 15v 1.6 2.1 5.0 v zh5 input impedance 1 k ? t d(on) turn on delay time driver + mosfet 220 300 t d(off) turn off delay time driver + mosfet 1300 1500 ns boost diode characteristics symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 600 v f diode forward voltage i f = 30a 1.8 v i f(av) maximum average forward current duty cycle=50% t c = 80c 30 i rrm reverse recovery current 7.5 a t rr reverse recovery time i f = 30a v r =350v di f /dt=-240a/s t j = 100c 155 ns r thjc junction to case 1.5 c/w
APTLM50H10FRT APTLM50H10FRT ? rev 2 june, 2004 apt website ? http:/ / www.advancedpower.com 3 ? 6 bridge rectifier static electrical characteristics symbol characteristic test conditions min typ max unit v rrm max peak repetitive reverse voltage 1200 v f diode forward voltage i f = 40a 1.3 v i f(av) average rectifier forward current t c = 80c 40 a r thjc junction to case 1 c/w full bridge static electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 1ma 500 v tc=25c 37 i d continuo us drain current tc=80c 28 i dm pulsed drain current 150 a p d total power dissipation 312 w r ds(on) drain ? source on resistance v gs = 10v, i d = 18.5a 100 m ? r thjc junction to case 0.40 c/w full bridge dynamic characteristics symbol characteristic test conditions min typ max unit t r rise time 150 250 t f fall time v in = 15v, v bus = 250v i d = 8a 80 150 ns full bridge body diode characteristics symbol characteristic test conditions min typ max unit i s continuous source current 37 a v sd diode forward voltage v gs = 0v, i s = -37a 1.3 v t j = 25c 250 t rr reverse recovery time i s = -37a v r = 250v di s /dt = 100a/s t j = 100c 500 ns t j = 25c 1.6 q rr reverse recovery charge i s = -37a v r = 250v di s /dt = 100a/s t j = 100c 5.5 c full bridge driver electrical characteristics symbol characteristic test conditions min typ max unit vi operating auxiliary supply voltage i = 1, 3, 4 13 15 16 v ivi operating auxiliary supply current fout =100khz, vi=15v, i=1, 3, 4 100 ma hi maximum input voltage i = 1, 2, 3, 4 -16 16 hi (th+) positive going threshold voltage vi = 15v, i= 1, 2, 3, 4 7.5 9.5 11.5 hi (th-) negative going threshold voltage vi = 15v, i= 1, 2, 3, 4 4.7 6.5 8.1 hi (hys) hysteresis voltage vi = 15v, i= 1, 2, 3, 4 1.6 2.1 5.0 v zhi input impedance i= 1, 2, 3, 4 1.0 k ? t d(on) turn on delay time driver + mosfet 280 400 t d(off) turn off delay time driver + mosfet 600 1000 ns
APTLM50H10FRT APTLM50H10FRT ? rev 2 june, 2004 apt website ? http:/ / www.advancedpower.com 4 ? 6 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -25 150 t stg storage temperature range -25 100 t c operating case temperature -25 70 c to heatsink m5 2 3.5 torque mounting torque for terminals m3 0.5 n.m wt package weight 620 g temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 package outline t: thermistor temperature r t : thermistor value at t
APTLM50H10FRT APTLM50H10FRT ? rev 2 june, 2004 apt website ? http:/ / www.advancedpower.com 5 ? 6 typical mosfet full bridge performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 5v 5.5v v gs =15v 0 20 40 60 80 100 024681012 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 20 40 60 80 100 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.90 1.00 1.10 1.20 1.30 1.40 1.50 0 20 40 60 80 100 120 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 18.5a 0 10 20 30 40 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTLM50H10FRT APTLM50H10FRT ? rev 2 june, 2004 apt website ? http:/ / www.advancedpower.com 6 ? 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperatur e bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =18.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) ciss crss coss 10 100 1000 10000 100000 0.01 0.1 1 10 100 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =37a t j =25c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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