?2000 fairchild semiconductor international rev. a, february 2000 BDX33/a/b/c npn epitaxial silicon transistor absolute maximum ratings t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage : BDX33 : BDX33a : BDX33b : BDX33c 45 60 80 100 v v v v v ceo collector-emitter voltage : BDX33 : BDX33a : BDX33b : BDX33c 45 60 80 100 v v v v i c collector current (dc) 10 a i cp *collector current (pulse) 15 a i b base current 0.25 a p c collector dissipation (t c =25 c) 70 w t j junction temperature 150 c t stg storage temperature - 65 ~ 150 c BDX33/a/b/c power linear and switching applications high gain general purpose power darlington tr complement to bdx34/34a/34b/34c respectively 1.base 2.collector 3.emitter to-220 1
?2000 fairchild semiconductor international rev. a, february 2000 BDX33/a/b/c electrical characteristics t c =25 c unless otherwise noted * pulse test: pw=300 s, duty cycle =1.5% pulse symbol parameter test condition min. typ. max. units v ceo (sus) * collector-emitter sustaining voltage : BDX33 : BDX33a : BDX33b : BDX33c i c = 100ma i b = 0 45 60 80 100 v v v v v cer (sus) * collector-emitter sustaining voltage : BDX33 : BDX33a : BDX33b : BDX33c i c = 100ma, i b = 0 r be = 100 ? 45 60 80 100 v v v v v cev (sus) * collector-emitter sustaining voltage : BDX33 : BDX33a : BDX33b : BDX33c i c = 100ma, i b = 0 v be = 1.5v 45 60 80 100 v v v v i cbo collector cut-off current : BDX33 : BDX33a : BDX33b : BDX33c v cb = 45v, i e = 0 v cb = 60v, i e = 0 v cb = 80v, i e = 0 v cb = 100v, i e = 0 0.2 0.2 0.2 0.2 ma ma ma ma i ceo collector cut-off current : BDX33 : BDX33a : BDX33b : BDX33c v ce = 22v, i b = 0 v ce = 30v, i b = 0 v ce = 40v, i b = 0 v ce = 50v, i b = 0 0.5 0.5 0.5 0.5 ma ma ma ma i ebo emitter cut-off current v eb = 5v, i c = 0 5 ma h fe * dc current gain : BDX33/34 : BDX33b/33c v ce = 3v, i c = 4a v ce = 3v, i c = 3a 750 750 v ce (sat) * collector-emitter saturation voltage : BDX33/33a : BDX33b/33c i c = 4a, i b = 8ma i c = 3a, i b = 6ma 2.5 2.5 v v v be (on) * base-emitter on voltage : BDX33/33a : BDX33b/33c v ce = 3v, i c = 4a v ce = 3v, i c = 3a 2.5 2.5 v v v f * parallel diode forward voltage i f = 8a 4 v
?2000 fairchild semiconductor international BDX33/a/b/c rev. a, february 2000 typical characteristics
?2000 fairchild semiconductor international rev. a, february 2000 BDX33/a/b/c package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220
?2000 fairchild semiconductor international rev. a, january 2000 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? coolfet? crossvolt? e 2 cmos? fact? fact quiet series? fast ? fastr? gto? hisec? isoplanar? microwire? pop? powertrench? qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? vcx? disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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