TLMV3100 vishay telefunken 1 (7) rev. a2, 07-sep-00 www.vishay.com document number 83042 bicolor smd led color type technology angle of half intensity high efficiency red TLMV3100 gaasp on gap 60 green TLMV3100 gap on gap 60 description these devices have been designed to meet the in- creasing demand for surface mounting technology. the package of the tlm.3100 is the plcc3 (equiv- alent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. this smd device consists of a red and green chip. so it is possible to choose the color in one device. features smd led with exceptional brightness multicolored luminous intensity categorized compatible with automatic placement equipment eia and ice standard package compatible with infrared, vapor phase and wave solder processes according to cecc available in 8 mm tape low profile package non-diffused lens: excellent for coupling to light pipes and backlighting low power consumption luminous intensity ratio in one packaging unit i vmax /i vmin 2.0 94 8554 applications automotive: backlighting in dashboards and switches telecommunication: indicator and backlighting in telephone and fax indicator and backlight for audio and video equipment indicator and backlight in office equipment flat backlight for lcds, switches and symbols general use
TLMV3100 vishay telefunken 2 (7) rev. a2, 07-sep-00 www.vishay.com document number 83042 absolute maximum ratings t amb = 25 c, unless otherwise specified TLMV3100 parameter test conditions symbol value unit reverse voltage per diode i r = 10 a v r 6 v dc forward current per diode t amb 60 c i f 30 ma surge forward current per diode t p 10 s i fsm 0.5 a power dissipation per diode t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics t amb = 25 c, unless otherwise specified high efficiency red ( TLMV3100 ) parameter test conditions type symbol min typ max unit luminous intensity i f = 10 ma i v 2.5 6 mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma j 60 deg forward voltage per diode i f = 10 a v f 2.4 3 v reverse current per diode v r = 6 v i r 10 a junction capacitance per diode v r = 0, f = 1 mhz c j 15 pf green ( TLMV3100 ) parameter test conditions type symbol min typ max unit luminous intensity i f = 10 ma i v 2.5 6 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma j 60 deg forward voltage per diode i f = 10 a v f 2.4 3 v reverse current per diode v r = 6 v i r 10 a junction capacitance per diode v r = 0, f = 1 mhz c j 15 pf
TLMV3100 vishay telefunken 3 (7) rev. a2, 07-sep-00 www.vishay.com document number 83042 typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 25 50 75 100 125 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 95 10904 figure 1. power dissipation vs. ambient temperature 0 10 20 30 40 60 020406080 i forward current ( ma ) f t amb ambient temperature ( c ) 100 95 10905 50 figure 2. forward current vs. ambient temperature 0.01 0.1 1 10 1 10 100 1000 10000 t p pulse length ( ms ) 100 95 9985 i forward current ( ma ) f dc t p /t=0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb 60 c figure 3. forward current vs. pulse length 0.4 0.2 0 0.2 0.4 i relative luminous intensity v rel 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 4. rel. luminous intensity vs. angular displacement 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 9989 i forward current ( ma ) f high efficiency red figure 5. forward current vs. forward voltage 020406080 0 0.4 0.8 1.2 1.6 2.0 100 95 9993 i relative luminous intensity v rel t amb ambient temperature ( c ) high efficiency red figure 6. rel. luminous intensity vs. ambient temperature
TLMV3100 vishay telefunken 4 (7) rev. a2, 07-sep-00 www.vishay.com document number 83042 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 high efficiency red figure 7. rel. lumin. intensity vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 9995 i relative luminous intensity v rel high efficiency red figure 8. relative luminous intensity vs. forward current 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i relative luminous intensity v rel wavelength ( nm ) 1.0 high efficiency red figure 9. relative luminous intensity vs. wavelength 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 9986 i forward current ( ma ) f green figure 10. forward current vs. forward voltage 020406080 0 0.4 0.8 1.2 1.6 2.0 100 95 10320 i relative luminous intensity v rel t amb ambient temperature ( c ) green figure 11. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i specific luminous intensity i f forward current ( ma ) figure 12. specific luminous intensity vs. forward current
TLMV3100 vishay telefunken 5 (7) rev. a2, 07-sep-00 www.vishay.com document number 83042 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 9996 i relative luminous intensity v rel green figure 13. relative luminous intensity vs. forward current 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 i relative luminous intensity v rel wavelength ( nm ) 1.0 green figure 14. relative luminous intensity vs. wavelength dimensions in mm 95 11317
TLMV3100 vishay telefunken 6 (7) rev. a2, 07-sep-00 www.vishay.com document number 83042 pcb layout in mm 95 10967
TLMV3100 vishay telefunken 7 (7) rev. a2, 07-sep-00 www.vishay.com document number 83042 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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