dmn62d0lfb document number: ds35409 rev. 2 - 2 1 of 6 www.diodes.com october 2011 ? diodes incorporated dmn62d0lfb advance information new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25c 60v 2? @ v gs = 4v 100ma 2.5? @ v gs = 2.5v 50ma description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? dc-dc converters ? power management functions ? battery operated systems and solid-state relays ? drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x1-dfn1006-3 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel DMN62D0LFB-7 nk 7 8 3,000 DMN62D0LFB-7b nk 7 8 10,000 notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be f ound on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information x1-dfn1006-3 bottom view top view pin-out source gate protection diode gate drai n equivalent circuit esd protected d s g nk = product type marking code top view dot denotes drain side DMN62D0LFB-7 top view ba r denotes gate and source side DMN62D0LFB-7b nk nk
dmn62d0lfb document number: ds35409 rev. 2 - 2 2 of 6 www.diodes.com october 2011 ? diodes incorporated dmn62d0lfb advance information new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (note 4) v gs = 4.0v steady state t a = 25c t a = 70c i d 100 75 ma pulsed drain current (note 5) i dm 200 ma thermal characteristics characteristic symbol max unit power dissipation (note 4) p d 0.47 w thermal resistance, junction to ambient @t a = 25c (note 4) r ja 258 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 60 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 1.0 a v ds = 60v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 5v, v ds = 0v - - 500 na v gs = 10v, v ds = 0v - - 2.0 a v gs = 15v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 0.6 - 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 1.3 2 v gs = 4v, i d = 100ma - 1.5 2.5 v gs = 2.5v, i d = 50ma - 1.9 3 v gs = 1.8v, i d = 50ma - 2.6 - v gs = 1.5v, i d = 10ma forward transfer admittance |y fs | - 0.8 - s v ds = 10v, i d = 200ma diode forward voltage v sd - 0.9 1.3 v v gs = 0v, i s = 115ma dynamic characteristics (note 7) input capacitance c iss - 32 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 4.4 - reverse transfer capacitance c rss - 2.9 - gate resistance r g - 126 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 0.45 - nc v gs = 4.5v, v ds = 10v, i d = 250ma gate-source charge q g s - 0.08 - gate-drain charge q g d - 0.08 - turn-on delay time t d ( on ) - 3.4 - ns v gs = 10v, v ds = 30v, r l = 150 ? , r g = 25 ? , i d = 200ma turn-on rise time t r - 3.4 - ns turn-off delay time t d ( off ) - 26.4 - ns turn-off fall time t f - 16.3 - ns notes: 4. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 5. repetitive rating, pulse width limited by junction temperature. 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing.
dmn62d0lfb document number: ds35409 rev. 2 - 2 3 of 6 www.diodes.com october 2011 ? diodes incorporated dmn62d0lfb advance information new product 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain -source voltage(v) fig. 1 typical output characteristics ds i , drain current (a) d i (a) @ v =4.0v dgs i (a) @ v =4.5v dgs i (a) @ v =2.5v dgs i (a) @ v =3.0v dgs i (a) @ v =1.5v dgs i (a) @ v =2.0v dgs i (a) @ v =1.8v dgs 0.001 0.01 0.1 1 0 0.5 1 1.5 2 v , gate source voltage(v) fig. 2 typical transfer characteristics gs i , drain current (a) d 0 0.5 1 1.5 2 2.5 3 0 0.1 0.2 0.3 0.4 i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r ( ) ave @ v =2.5v ds(on) g r ( ) ave @ v =4.5v ds(on) g r ( ) ave @ v =1.8v ds(on) g r ,d r ai n -s o u r c e o n - r esis t a n c e( ) ds(on) 0 0.1 0.2 0.3 0.4 i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) 0.1 1 10 v = 5.0v gs a ve r() @ 150c ds(on) ? ave r() @ -55c ds(on) ? ave r() @ 25c ds(on) ? ave r() @ 85c ds(on) ? ave r() @ 125c ds(on) ? 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 5 on-resistance variation with temperature r , static drain-source on-resistance ( ) ds(on) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 gate threshold variation vs. ambient temperature v , gate threshold voltage (v) th
dmn62d0lfb document number: ds35409 rev. 2 - 2 4 of 6 www.diodes.com october 2011 ? diodes incorporated dmn62d0lfb advance information new product 0.001 0.01 0.1 1 0.1 0.3 0.5 0.7 0.9 1.1 v , source-drain voltage (v) sd fig. 7 diodes forward voltage vs. current i (a) s 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 v , drain-source voltage (v) ds fig. 8 typical junction capacitance c , junction capacitance (pf) t 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 q (nc) g fig. 9 gate charge characteristics v (v) gs v =10v, i =250ma ds d 0.001 0.01 0.1 1 0.1 1 10 100 v , drain-source voltage (v) ds fig. 10 soa, safe operation area i , drain current (a) d 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) fig. 11 transient thermal resistance 0.001 0.01 0.1 1 r(t), transient thermal resistance r(t) @ d=0.005 r(t) @ d=single pulse r(t) @ d=0.01 r(t) @ d=0.02 r(t) @ d=0.05 r(t) @ d=0.1 r(t) @ d=0.3 r(t) @ d=0.5 r(t) @ d=0.7 r(t) @ d=0.9 r (t)=r(t) * r ? ja ja r =273 c/w duty cycle, d=t1 / t2 ja
dmn62d0lfb document number: ds35409 rev. 2 - 2 5 of 6 www.diodes.com october 2011 ? diodes incorporated dmn62d0lfb advance information new product package outline dimensions suggested pad layout x1-dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
dmn62d0lfb document number: ds35409 rev. 2 - 2 6 of 6 www.diodes.com october 2011 ? diodes incorporated dmn62d0lfb advance information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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