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general purpose transistors general purpose transistors 0
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fht945 1 description & features c sot-23 excellent h fe linearity h fe ?O h fe (0.1ma)/ h fe (2ma)=0.95(typ . ) high h fe h fe =70 700 low noise s? nf=1db (typ . ) , 10db(max . ) pin assignment _f pin number _? pin name _? sot-23 function b 1 base e 2 emitter c 3 collector maximum ratings(t a =25 ) ~? characteristic ? symbol ? rating ~? unit collector-emitter voltage ?O - lO? v ceo 50 vdc collector-base voltage ?O - O? v cbo 60 vdc emitter-base voltage lO - O? v ebo 5.0 vdc collector current?continuous ?O - Bm i c 150 madc base current O i b 30 madc thermal characteristics characteristic ? symbol ? max ? unit collector power dissipation ?O? p c 300 mw junction and storage temperature Y??? t j , t stg 150 -55 ~150 device marking h fe (1) fht945o=co(70~140), FHT945Y=cy(120~240) fht945g=cg(200~400), fht945l=cl(350~700) electrical characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? test condition y?l min ? type ? max ? unit collector cutoff current ?O? i cbo v cb =60v,i e =0 ? ? 0.1 a emitter cutoff current lO? i ebo v eb =5v,i c =0 ? ? 0.1 a collector-emitter breakdown voltage ?O - lO? v (br)ceo i c =1.0ma 50 ? ? v collector-base breakdown voltage ?O - O? v (br)cbo i c =100a 60 ? ? v emitter-base breakdown voltage lO - O? v (br)ebo i e =100a 5 ? ? v dc current gain ? h fe v ce =6v,i c =2ma 70 ? 700 ? collector-emitter saturation voltage ?O - lO?? v ce(sat) i c =100ma,i b =10ma ? ? 0.25 v base-emitter voltage O - lO? v be v ce =5.0v,i c =10ma ? ? 0.82 v transition frequency l f t v ce =5.0v,i c =10ma 100 180 ? mhz collector output capacitance ? c ob v cb =10v,i e =0, f=1mhz ? 4.0 7.0 pf
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