APT58M50JCU2 APT58M50JCU2 ? rev 0 september, 2009 www.microsemi.com 1-5 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper ha nding procedures should be followe d. see application note apt0502 on www.microsemi.com g s d k isotop ? symbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 58 i d continuous drain current t c = 80c 43 i dm pulsed drain current 270 a v gs gate - source voltage 30 v r dson drain - source on resistance 65 m p d maximum power dissipation t c = 25c 543 w i ar avalanche current (repetitive and non repetitive) 42 a application ? ac and dc motor control ? switched mode power supplies ? power factor correction ? brake switch features ? power mos 8? mosfet - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? isotop ? package (sot-227) ? very low stray inductance ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? rohs compliant isotop ? boost chopper mosfet + sic chopper diode power module k d g s v dss = 500v r dson = 65m max @ tj = 25c i d = 58a @ tc = 25c
APT58M50JCU2 APT58M50JCU2 ? rev 0 september, 2009 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i dss zero gate voltage drain current v ds = 500v v gs = 0v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 42a 65 m v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 4 5 v i gss gate ? source leakage current v gs = 30 v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 10800 c oss output capacitance 1164 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 148 pf q g total gate charge 340 q gs gate ? source charge 75 q gd gate ? drain charge v gs = 10v v bus = 250v i d = 42a 155 nc t d(on) turn-on delay time 60 t r rise time 70 t d(off) turn-off delay time 155 t f fall time resistive switching @ 25c v gs = 15v v bus = 333v i d = 42a r g = 2.2 50 ns sic chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 100 400 i rm maximum reverse leakage current v r =600v t j = 175c 200 2000 a i f dc forward current tc = 100c 20 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 20a t j = 175c 2 2.4 v q c total capacitive charge i f = 20a, v r = 300v di/dt =800a/s 28 nc f = 1mhz, v r = 200v 130 c total capacitance f = 1mhz, v r = 400v 100 pf thermal and package characteristics symbol characteristic min typ max unit mosfet 0.23 r thjc junction to case thermal resistance sic diode 1.35 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -40 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g
APT58M50JCU2 APT58M50JCU2 ? rev 0 september, 2009 www.microsemi.com 3-5 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. typical mosfet performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single p ulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maxim um effective transient therm al im pedance, junction to case vs pulse duration source gate drain cathode
APT58M50JCU2 APT58M50JCU2 ? rev 0 september, 2009 www.microsemi.com 4-5 low voltage output characteristics t j =25c t j =125c 0 50 100 150 200 250 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) v gs =10v low voltage output characteristics 5.5v 6v 6.5v 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =7,8 &10v t j =125c normalized r dson vs. temperature 0.5 1 1.5 2 2.5 25 50 75 100 125 150 t j , junction temperature (c) v gs =10v i d =42a r dson , drain to source on resistance ciss crss coss 10 100 1000 10000 100000 0 50 100 150 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage transfert characteristics t j =25c t j =125c 0 25 50 75 100 125 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle gate charge vs gate to source v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 0 60 120 180 240 300 360 gate charge (nc) v gs , gate to source voltage i d =42a t j =25c
APT58M50JCU2 APT58M50JCU2 ? rev 0 september, 2009 www.microsemi.com 5-5 typical sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 250 300 350 400 200 300 400 500 600 700 800 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 200 400 600 800 1 10 100 1000 v r reverse voltage c, capacitance (pf) isotop? is a registered trademark of st microelectronics nv microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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