C945 transistor (npn) features power dissipation p cm : 0.4 w (tamb=25 ) collector current i cm : 0.15 a collector-base voltage v (br) cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic=1ma, i e =0 60 v collector-emitter breakdown voltage v(br) ceo i c =100ua , i b =0 50 v emitter-base breakdown voltage v(br) ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a collector cut-off current i ceo v ce =45v 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =6v, i c =1ma 70 700 dc current gain h fe(2) v ce =6v, i c =0.1ma 40 collector-emitter saturation voltage v ce (sat) i c =100ma, i b =10ma 0.3 v base-emitter saturation voltage v be (sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =6v, i c =10ma, f =30 mhz 200 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mh z 3.0 pf noise figure nf v ce = 6v, i c =0.1 ma r g =10 k ? , f=1k mh z 4 10 db classification of h fe(1) rank o y g p bl range 70-140 120-240 200-400 350-700 1 2 3 to-92 1. emitter 2. collector 3. base C945 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd r o hs
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