egf1a thru egf1d document number 88579 15-aug-05 vishay general semiconductor www.vishay.com 1 p a t e n t e d * ? do-214ba (gf1) * glass-plastic encapsulation technique is covered by patent no. 3,996,602, brazed-lead assembly by patent no. 3,930,306 and lead forming by patent no. 5,151,846 surface mount glass passivat ed ultrafast rectifier major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 200 v i fsm 30 a t rr 50 ns v f 1.0 v t j max. 175 c features cavity-free glass-passivated junction ideal for automated placement ultrafast reverse recovery time low switching losse s, high efficiency high forward surge capability meets environmental standard mil-s-19500 meets msl level 1, per j-std-020c solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer, automotive and telecommunication mechanical data case: do-214ba, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol egf1a egf1b EGF1C egf1d unit device marking code ea eb ec ed maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current at t l = 125 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j ,t stg - 65 to + 175 c
www.vishay.com 2 document number 88579 15-aug-05 egf1a thru egf1d vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) thermal resistance from junction to am bient and from junction to lead, p.c.b. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper p ad areas ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol egf1a egf1b EGF1C egf1d unit maximum instantaneous forward voltage (1) at 1.0 a v f 1.0 v maximum dc reverse current at rated dc blocking voltage (1) t a = 25 c t a = 125 c i r 5.0 50 a typical reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns typical junction capacitance at 4.0 v, 1 mhz c j 15 pf parameter symbol egf1a egf1b EGF1C egf1d unit typical thermal resistance (1) r ja r jl 85 30 c/w figure 1. maximum forward current derating curve 0 1.0 0 25 50 75 100 125 150 175 average forward rectified current (a) lead temperature ( c) 0.5 resistive or inductive load p.c.b. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas figure 2. maximum non-repetitive peak forward surge current 0 5.0 10 15 20 25 30 1 100 10 peak forward surge current (a) number of cycles at 60 h z t j =t j max. 8.3ms single half sine-wave
egf1a thru egf1d document number 88579 15-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward voltage (v) 0.01 0.1 10 1 50 instantaneous forward current (a) 1.8 pulse width = 300 s 1% duty cycle t j =25c t j = 150 c 020 60 40 100 8 0 instantaneo u sre v erse leakage c u rrent ( a) percent of rated peak re v erse v oltage ( % ) t j =25c t j = 100 c t j = 150c 0.01 0.1 10 1 100 1000 figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance reverse voltage (v) junction capacitance (pf) 0.1 1 10 100 20 10 30 40 50 60 70 0 t j =25c f = 1.0 mh z vsig = 50mvp-p pulse duration, sec. (t) transient thermal impedance (c/w) 0.01 0.1 1 10 100 100 10 1 0.1 0.167 (4.24) 0.1 8 7 (4.75) 0.0065 (0.17) 0.015 (0.3 8 ) 0.030 (0.76) 0.060 (1.52) 0.196 (4.9 8 ) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.100 (2.54) 0.11 8 (3.00) 0.040 (1.02) 0.066 (1.6 8 ) 0.09 8 (2.49) 0.10 8 (2.74) 0.006 (0.152) typ. do-214ba (gf1) 0.076 max. (1.93 max.) 0.220 (5.5 8 )ref 0.060 mi n . (1.52 mi n .) mountin g pad layout cathode band 0.066 mi n . (1.6 8 mi n .)
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