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hexfet ? power mosfet IRL1104PBF pd - 95404 logic-level gate drive advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free v dss = 40v r ds(on) = 0.008 ? i d = 104a s d g 6/17/04 parameter min. typ. max. units r jc junction-to-case ???? ???? 0.9 r cs case-to-sink, flat, greased surface ???? 0.50 ???? c/w r ja junction-to-ambient ???? ???? 62 thermal resistance description parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 104 i d @ t c = 100c continuous drain current, v gs @ 10v 74 a i dm pulsed drain current p d @t c = 25c power dissipation 167 w linear derating factor 1.1 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy 340 mj i ar avalanche current 62 a e ar repetitive avalanche energy 17 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. www.irf.com 1 to-220ab
IRL1104PBF 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.04 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.008 v gs = 10v, i d = 62a ??? ??? 0.012 v gs = 4.5v, i d = 52a v gs(th) gate threshold voltage 1.0 ??? ??? v v ds = v gs , i d = 250a g fs forward transconductance 53 ??? ??? s v ds = 25v, i d = 62a ??? ??? 25 v ds = 40v, v gs = 0v ??? ??? 250 v ds = 32v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 16v gate-to-source reverse leakage ??? ??? -100 v gs = -16v q g total gate charge ??? ??? 68 i d = 62a q gs gate-to-source charge ??? ??? 24 nc v ds = 32v q gd gate-to-drain ("miller") charge ??? ??? 33 v gs = 4.5v, see fig. 6 and 13 t d(on) turn-on delay time ??? 18 ??? v dd = 20v t r rise time ??? 257 ??? i d = 62a t d(off) turn-off delay time ??? 32 ??? r g = 3.6 ? , v gs = 4.5v t f fall time ??? 64 ??? r d = 0.4 ? , see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3445 ??? v gs = 0v c oss output capacitance ??? 1065 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 270 ??? ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) s d g i dss drain-to-source leakage current r ds(on) static drain-to-source on-resis- i gss

? parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 62a, v gs = 0v t rr reverse recovery time ??? 84 126 ns t j = 25c, i f = 62a q rr reverse recovery charge ??? 223 335 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) 416 104 s d g source-drain ratings and characteristics v dd = 15v, starting t j = 25c, l = 0.18mh r g = 25 ? , i as =62a. (see figure 12) calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to design tip # 93-4 repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) pulse width 300s; duty cycle 2%. i sd 62a, di/dt 217a/s, v dd v (br)dss , t j 175c notes:
IRL1104PBF www.irf.com 3 fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 104a 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 2.0 4.0 6.0 8.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j 25
IRL1104PBF 4 www.irf.com fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage 0 20 40 60 80 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 62 a v = 20v ds v = 32v ds 1 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j
IRL1104PBF www.irf.com 5 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case
1 0.1 % !" + - 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package
IRL1104PBF 6 www.irf.com q g q gs q gd v g charge fig 13a. basic gate charge waveform d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12c. maximum avalanche energy vs. drain current fig 13b. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 10v 5 25 50 75 100 125 150 175 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 25a 44a 62a
IRL1104PBF www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer *
IRL1104PBF 8 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector

dimensions are shown in millimeters (inches)

example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c week 19 logo re ct if ie r int e rnat ional note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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