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  r s e m i c o n d u c t o r l l 4 6 small signal schottky diodes features mechanical data absolute ratings(limiting values) electrical characteristics for general purpose applications these diodes features very low turn-on voltage and fast switching. these devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. this diode is also available in the do-35 case with the type designation ba t46. v rrm i frm i fsm repetitive peak reverse v oltage repetitive peak forward current at t p < 1s, d < 0.5, surge forward current at t p < 10m s , junction temperature power dissipation at i f ambient operating temperature range storage t emperature range t stg t a t j p tot forward continuous current at t a =25 c t a =25 t a =65 t a =25 c 1) v alid provided that electrodes are kept at ambient temperature ma ma ma mw v -65 to+150 -65 to+125 c c c 125 350 750 150 100 150 1) 1) 1) 1) reverse breakdown v oltage t ested with 100 m a pulses leakage current pulse test t p < 300 m s , d < 2% at vr=1.5v at vr=1.5v , tj=60 c at vr=10vat vr=10v , tj=60 c at vr=50vat vr=50v , tj=60 c at vr=75vat vr=75v , tj=60 c forward v oltage pulse t est t p < 300 m s, v r =10v t j =60 c d < 2% at i f =0.1ma, at i f =10ma, at i f =250ma 100 10 6 0.25 0.5 7.5 15 20 0.45 5 1 0.8 2 5 thermal resistance junction to ambient air junction capacitance at v r =0v ,f=1mhz at v r =1v ,f=1mhz v (br)r r ja v v v v m a m a m a m a m a m a m a m a pf pf k/w v f v f v f ir ir ir ir ir ir ir ir c j c j 1) v alid provided that electrodes are kept at ambient temperature) 300 1) case : minimelf glass case(sod-80) w eight : approx. 0.05 gram minimelf dimensions in inches and (millimeters) symbols units v alue min. t yp. max. unis symbols 2- 50 j f 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) 0.063(1.6) 0.055(1.4) ! ! high temperature soldering guaranteed : 260 !/ 10 seconds at terminals component in accordance to rohs 2002 / 95 / ec and weee 2002 / 96 / ec jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com
r at i n g s a n d c h a r a c t e r i s t i c c u r v e s l l 4 6 figure 1. forward current versus forward voltage at dif ferent temperatures(typical values) figure 2. forward current versus forward voltage (typical values) 0 0.2 0.2 0.4 0.6 0.8 1 0.4 10 10 1 10 10 10 -2 -1 3 2 0 100 200 300 400 0.6 0.8 1 1.2 v f (v) v f (v) 500 i f (ma) i f (ma) 0 25 50 10 10 10 10 1 -1 1 2 3 75 100 125 i r ( m a) figure 3.reverse current versus junction temperature (typical values) t j =( c) max. 90% confidence v r =75v typ. t j = 25 c t amb =100 c t amb = 25 c t amb = -55 c 2- 51 jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com
r at i n g s a n d c h a r a c t e r i s t i c c u r v e s l l 4 6 figure 5.capacitance c j versus reverse applied voltage v r (typical values) 20 40 60 80 100 0 2 4 6 8 10 v r (v) c j (pf) t amb = 25 c 0 20 40 10 10 10 10 1 -1 1 2 3 60 80 100 i r ( m a) v r (v) figure 4.reverse current versus continuous reverse voltage 25 c 50 c 60 c 75 c 100 c 125 c 2- 52 jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com


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