mp04xxx590 series 1/10 www.dynexsemi.com replaces october 2001 version, ds5371-3.1 ds5371-4.0 august 2003 features dual device module electrically isolated package pressure contact construction international standard footprint alumina (non toxic) isolation medium integral water cooled heatsink applications motor control controlled rectifier bridges heater control ac phase control voltage ratings ordering information order as: mp04hbt590-18 or mp04hbt-16 or mp04hbt14 mp04hbp590-18 or mp04hbp-16 or mp04hbp14 mp04hbn590-18 or mp04hbn-16 or mp04hbn14 note: when ordering, please use the whole part number. key parameters v drm 1800v i t(av) 595a i tsm(per arm) 16800a v isol 3000v mp04xxx590 dual thyristor, thyristor/diode module code circuit hbt hbp hbn fig. 2 module outline fig.1 circuit diagrams module type code: mp04. for further information see package details. 1800 1600 1400 mp04xxx590-18 mp04xxx590-16 mp04xxx590-14 conditions t vj = ?0? to 125?c, i drm = i rrm = 50ma v drm = v rrm = v dsm v rsm = v drm + 100v lower voltage grades available. type number repetitive peak voltages v drm v rrm v dsm v
mp04xxx590 series 2/10 www.dynexsemi.com test conditions t vj = ?0?c to 125?c t vj = ?0?c to 125?c t vj = ?0?c to 125?c t vj = +25?c to 125?c half wave resistive load t case = 75?c t case = 85?c t case = 75?c 8.3ms half sine, t j = 125?c v r = 0 8.3ms half sine, t j = 125?c v r = 50% v drm 10ms half sine, t j = 125?c v r = 0 10ms half sine, t j = 125?c v r = 50% v drm commoned terminals to base plate. ac rms, 1 min, 50hz symbol v drm v rrm v rsm v dsm i t(av) i t(rms i tsm i 2 t i tsm i 2 t i tsm i 2 t i tsm i 2 t v isol units v v v v a a a ka a 2 s ka a 2 s ka a 2 s ka a 2 s v max. 1800 1800 1800 1900 595 505 935 16.8 1411 x 10 3 13.5 911 x 10 3 15.7 1232 x 10 3 12.6 794 x 10 3 3000 absolute maximum ratings - per arm stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. parameter repetitive peak on-state voltage repetitive peak reverse voltage non-repetitive peak on-state voltage non-repetitive peak reverse voltage mean on-state current rms value surge (non-repetitive) on-current i 2 t for fusing surge (non-repetitive) on-current i 2 t for fusing surge (non-repetitive) on-current i 2 t for fusing surge (non-repetitive) on-current i 2 t for fusing isolation voltage
mp04xxx590 series 3/10 www.dynexsemi.com test conditions dc half wave 3 phase mounting torque = 5nm with mounting compound reverse (blocking) - mounting - m6 electrical connections - m10 - parameter thermal resistance - junction to case (per thyristor or diode) thermal resistance - case to heatsink (per thyristor or diode) virtual junction temperature operating and storage temperature range screw torque weight (nominal) thermal and mechanical ratings symbol r th(j-c) r th(c-hs) t vj t op / t stg - - units ?c/kw ?c/kw ?c/kw ?c/kw ?c ?c nm (lb.ins) nm (lb.ins) g max. 0.056 0.060 0.066 0.02 125 125 6 (35) 12 (106) 1580 min. - - - - - ?0 - - - units ma v/ s a/ s v m ? test conditions at v rrm /v drm , t j = 125?c to 67% v drm , t j = 125?c from 67% v drm to 1500a, gate source 1.5a, t r = 0.5 s, t j = 125?c at t vj = 125?c. see note 1 at t vj = 125?c. see note 1 parameter peak reverse and off-state current linear rate of rise of off-state voltage rate of rise of on-state current threshold voltage on-state slope resistance dynamic characteristics - thyristor symbol i rrm /i drm dv/dt di/dt v t(to) r t max. 50 1000 500 0.85 0.38 min. - - - - - note 1: the data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
mp04xxx590 series 4/10 www.dynexsemi.com fig. 3 maximum (limit) on-state characteristics fig. 4 sub-cycle surge curves 0.5 1.0 1.5 2.0 2.5 instantaneous on-state voltage, v t - (v) 0 500 1000 1500 2000 2500 measured under pulse conditions instantaneous on-state current, i t - (a) t j = 125 ? c min t j = 125 ? c max 0 5 10 15 20 25 30 35 40 14 810 pulse length, half sine wave (ms) peak half sine on-state current - (ka) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 i 2 t value - (a 2 s x 10 6 ) 23 567 9 i tsm (v r = 0) i tsm (v r = 50% v rrm ) i 2 t (v r = 0) i 2 t (v r = 50% v rrm ) parameter gate trigger voltage gate trigger current gate non-trigger voltage peak forward gate voltage peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate power mean gate power test conditions v drm = 5v, t case = 25 o c v drm = 5v, t case = 25 o c at v drm , t case = 125 o c anode positive with respect to cathode anode negative with respect to cathode - anode positive with respect to cathode see table fig. 5 - symbol v gt i gt v gd v fgm v fgn v rgm i fgm p gm p g(av) gate trigger characteristics and ratings max. 3.5 200 0.25 30 0.25 5 10 150 10 units v ma v v v v a w w curves
mp04xxx590 series 5/10 www.dynexsemi.com fig. 7 transient thermal impedance - dc fig. 6 gate characteristics 10 1 0.1 0.01 0.001 gate trigger current, i gt - (a) 100 10 1 0.1 gate trigger voltage, v gt - (v) region of certain triggering t j = 125 ? c t j = 25 ? c t j = -40 ? c v gd i fgm table gives pulse power p gm in watts pulse width s 100 200 500 1ms 10ms frequency hz 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - 100w 50w 20w 10w 5w upper limit 99% lower limit 99% 0 0.01 0.02 0.03 0.04 0.05 0.06 0.001 0.01 0.1 1 10 100 1000 time - (seconds) thermal resistance junction to case - ( c/w) fig. 5 sub-cycle surge curves 0 2 4 6 8 10 12 14 16 18 0 102030405060 number of cycles @ 50hz peak half sine wave on-state current - (ka) surge current (v r = 0) surge current (v r = 50% v rrm ) fig. 8 on-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60hz 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 200 400 600 800 1000 1200 sine wave current (average, per arm) power dissipation (watts, per arm) 30 60 90 120 180
mp04xxx590 series 6/10 www.dynexsemi.com fig. 11 50/60hz single phase bridge dc output current vs power loss and maximum permissible case temperature 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 1000 1200 1400 1600 1800 2000 2200 dc output current - (a) total power loss - (w) 0 10 20 30 40 50 60 70 80 90 max permissible case temp. - ( ? c) power resistive load power inductive load temp resistive load temp inductive load fig. 8 on-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60hz fig. 9 maximum permissible casetemperature vs on-state current at specified conduction angles, sine wave 50/60hz fig. 10 maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60hz 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 200 400 600 800 1000 1200 1400 1600 square wave current (average, per arm) power dissipation (watts, per arm) 30 60 90 120 180 dc 0 10 20 30 40 50 60 70 80 90 100 100 200 300 400 500 600 700 800 900 1000 sine wave current (average, per arm) maximum permissble case temperature - ( c) 30 60 90 120 180 0 10 20 30 40 50 60 70 80 90 100 100 200 300 400 500 600 700 800 1000 1200 1400 square wave current (average, per arm) maximum permissible case temperature - ( c) 30 60 90 120 180 dc
mp04xxx590 series 7/10 www.dynexsemi.com fig. 12 50/60hz three phase bridge dc output current vs power loss and maximum permissible case temperature 3500 4000 4500 5000 5500 6000 6500 7000 7500 9500 8000 8500 9000 1300 1500 1700 1900 2100 2300 2500 dc output current - (a) total power loss - (w) 0 10 20 30 40 50 60 70 80 90 max permissible case temp. - ( ? c) power resistive or inductive load temp resistive or inductive load
mp04xxx590 series 8/10 www.dynexsemi.com nominal weight: 1580g auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. module outline type code: mp04 package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale.
mp04xxx590 series 9/10 www.dynexsemi.com power assembly capability the power assembly group provides support for those customers requiring more than the basic semiconductor switch. using cad design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of dynex semiconductors. an extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. heatsinks the power assembly group has a proprietary range of extruded aluminium heatsinks. these were designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. mounting recommendations adequate heatsinking is required to maintain the base temperature at 75 ? c if full rated current is to be achieved. power dissipation may be calculated by use of v t(to) and r t information in accordance with standard formulae. we can provide assistance with calculations or choice of heatsink if required. the heatsink surface must be smooth and flat; a surface finish of n6 (32 in) and a flatness within 0.05mm (0.002") are recommended. immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, scotch brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. care should be taken to ensure no foreign particles remain. an even coating of thermal compound (eg. unial) should be applied to both the heatsink and module mounting surfaces. this should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. after application of thermal compound, place the module squarely over the mounting holes, (or t slots) in the heatsink. fit and finger tighten the recommended fixing bolts at each end. using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6nm (55lbs.ins) is reached on all bolts at both ends. it is not acceptable to fully tighten one fixing bolt before starting to tighten the others. such action may damage the module.
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
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