sfh 3401 npn-silizium-fototransistor silicon npn phototransistor lead (pb) free produc t - rohs compliant 2008-07-30 1 wesentliche merkmale ? speziell geeignet fr anwendungen im bereich von 460 nm bis 1080 nm hohe linearit?t nur gegurtet lieferbar anwendungen umgebungslicht-detektor lichtschranken industrieelektronik ?messen/steuern/regeln? typ type bestellnummer ordering code fotostrom , (e e =0,1mw/cm 2 , =950nm v ce = 5 v) photocurrent ipce (a) sfh 3401 q65110a2635 63...320 sfh 3401-2/3 q6511 0a2644 100...320 features especially suitable for applications from 460 nm to 1080 nm high linearity available only on tape and reel applications ambient light detector photointerrupters industrial electronics for control and drive circuits
2008-07-30 2 sfh 3401 grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op ; t stg ? 40 + 100 c kollektor-emitterspannung collector-emitter voltage v ce 20 v kollektor-emitterspannung, t < 120 s collector-emitter voltage v ce 70 v kollektorstrom collector current i c 50 ma kollektorspitzenstrom, < 10 s collector surge current i cs 100 ma emitter-kollektorspannung emitter-collector voltage v ec 7v verlustleistung, t a = 25 c total power dissipation p tot 120 mw w?rmewiderstand fr montage auf pc-board thermal resistance for mounting on pcb r thja 450 k/w
sfh 3401 2008-07-30 3 kennwerte ( t a = 25 c, = 950 nm) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der max. fotoempfindlichkeit wavelength of max. sensitivity smax 850 nm spektraler bereich der fotoempfindlichkeit s = 10% von s max spectral range of sensitivity s = 10% of s max 460 1080 nm bestrahlungsempfindliche fl?che radiant sensitive area a 0.55 mm 2 abmessungen der chipfl?che dimensions of chip area l b l w 1 1mm mm halbwinkel half angle ? 60 grad deg. kapazit?t, v ce = 0 v, f = 1 mhz, e =0 capacitance c ce 15 pf kapazit?t, v cb = 0 v, f = 1 mhz, e =0 capacitance c cb 45 pf kapazit?t, v eb = 0 v, f = 1 mhz, e =0 capacitance c eb 19 pf dunkelstrom dark current v ce = 10 v, e =0 i ceo 3 ( 200) na fotostrom der kollektor-basis fotodiode photocurrent of collektor-base photodiode e e = 0.1 mw/cm 2 , v cb = 5 v e v = 1000 ix, normlicht/standard light a, v cb = 5 v i pcb i pcb 0.28 4.8 a a
2008-07-30 4 sfh 3401 directional characteristics s rel = f ( ? ) die fototransistoren werden nach ihrer fotoemp findlichkeit gruppiert und mit arabischen ziffern gekennzeichnet. the phototransistors are grouped according to thei r spectral sensitivity and distinguished by arabian figures. bezeichnung parameter symbol symbol wert value einheit unit -1 -2 -3 fotostrom, = 950 nm photocurrent e e = 0.1 mw/cm 2 , v ce = 5 v e v = 1000 ix, normlicht a/ standard light a, v ce = 5 v i pce i pce 63 125 1.65 100 200 2.6 160 320 4.2 a ma anstiegszeit/abfallzeit rise and fall time i c = 1 ma, v cc = 5 v, r l = 1 k ? t r , t f 16 24 34 s kollektor-emitter- s?ttigungsspannung collector-emitter saturation voltage i c = i pcemin 1) 0.3, e e = 0.1 mw/cm 2 v cesat 170 170 170 mv stromverst?rkung current gain e e = 0.1 mw/cm 2 , v ce = 5 v i pce / i pcb 340 530 860 ? 1) i pcemin ist der minimale fotostro m der jeweiligen gruppe. 1) i pcemin is the min. photocurrent of the specified group. ohf01402 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0.4 0.6 0.8 1.0 ? 0.2 0.4 0.6 0.8 1.0 100 0 0 0
sfh 3401 2008-07-30 5 rel. spectral sensitivity, s rel = f ( ) photocurrent i pce = f ( t a ), v ce = 5 v, normalized to 25 c photocurrent i pce = f ( v ce ) sfh 3401-3 ohf02332 0 rel s 400 10 20 30 40 50 60 70 80 % 100 500 600 700 800 900 nm 1100 t ohf01524 a 0 -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 pce pce 25 c v ohf00327 ce 0 010 20 30 40 50 60 70 v ma pce 1.0 mw/cm 0.5 1.0 1.5 2.0 2.5 3.0 2 2 0.5 mw/cm 0.25 mw/cm 2 0.1 mw/cm 2 photocurrent i pce = f ( e e ), v ce = 5 v dark current i ceo = f ( t a ), v ce = 10 v, e = 0 dark current i ceo = f ( v ce ), e = 0 e ohf00326 e -3 10 pce -4 10 10 1 ma 2 mw/cm 10 -2 10 0 10 -3 10 -2 10 -1 0 10 1 2 3 t ohf02342 a 0 ceo -1 10 10 0 10 1 10 2 10 3 na 20 40 60 80 100 ?c v ohf02341 ce 0 ceo -2 10 10 -1 10 0 10 1 10 2 na 10 20 30 40 50 70 v collector-emitter capacitance c ce = f ( v ce ), f = 1 mhz, e = 0 collector-base capacitance c cb = f ( v cb ), f = 1 mhz, e = 0 emitter-base capacitance c eb = f ( v eb ), f = 1 mhz, e = 0 v ohf02344 ce ce c 0 10 -2 -1 10 0 10 1 10 10 2 v pf 5 10 15 20 v ohf00332 cb 0 cb c 5 10 15 20 25 30 35 40 45 50 v pf 10 -2 -1 10 0 10 1 10 2 10 v ohf00333 eb 0 eb c 2 4 6 8 10 12 14 16 18 20 v pf 10 -2 -1 10 0 10 1 10 2 10
sfh 3401 2008-07-30 6 total power dissipation p tot = f ( t a ) t ohfd0228 a 0 tot p 0 20 40 60 80 c 100 mw 20 40 60 80 100 120 140 photocurrent i pce = f ( v ce ), i b = parameter v ohf00334 ce 0 pce 0 1 2 3 4 5 6 ma 2 4 6 8 10 12 14 16 v 20 1a a 2 a 3 a 4 a 5 a 6
sfh 3401 2008-07-30 7 ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch). empfohlenes l?tpaddesign recommended solderpad design ma?e in mm / dimensions in mm. anschlussbelegung pin configuration pin 1 = kollektor / collector pin 2 = basis / base pin 3 = emitter / emitter ohf02393 1.8 2.4 1.3 1.8 padgeometrie fr verbesserte w?rmeableitung heat dissipation paddesign for improved 1 0.3
2008-07-30 8 sfh 3401 l?tbedingungen vorbehandlung nach jedec level 4 soldering conditions preconditioning acc. to jedec level 4 reflow l?tprofil fr bleifreies l?ten (nach j-std-020c) reflow soldering profile for lead free soldering (acc. to j-std-020c) ppublished by osram opto semico nductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. y ou must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be im planted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohla0687 0 0 t t ?c s 120 s max 50 100 150 200 250 300 ramp up 100 s max 50 100 150 200 250 300 ramp down 6 k/s (max) 3 k/s (max) 25 ?c 30 s max 260 ?c +0 ?c -5 ?c 245 ?c 5 ?c 240 ?c 255 ?c 217 ?c maximum solder profile recommended solder profile 235 ?c -0 ?c +5 ?c minimum solder profile 10 s min
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