1 edition 1.3 august 1999 FLM1213-8F x, ku-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 42.8 -65 to +175 175 t c = 25 ? c v v w ? c ? c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 ? c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 32.0 and -4.4 ma respectively with gate resistance of 100 w . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 3400 5200 -0.5 -1.5 -3.0 38.5 39.0 - 5.5 6.5 - v ds = 5v, i ds =170ma v ds = 5v, i ds = 2200ma v ds = 5v, v gs = 0v i gs = -170 a v ds = 10v f = 12.7 ~ 13.2 ghz i ds @ 0.65 i dss (typ.) z s = z l = 50 w ma v - 3400 - ms -5.0 - - v db dbm g m v p v gso p 1db g 1db drain current - 2200 2600 ma i dsr power-added efficiency -28- % h add gain flatness -- 0.6 db ? g thermal resistance channel to case - 3.0 3.5 ? c/w r th 3rd order intermodulation distortion f = 13.2ghz, ? f = 10mhz 2-tone test pout = 28.5dbm s.c.l. -44 -46 - dbc im 3 test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 ? c) case style: ia g.c.p.: gain compression point, s.c.l.: single carrier level 10v x i dsr x r th channel temperature rise -- 80 ? c ? t ch features ?high output power: p 1db = 39.0dbm (typ.) ?high gain: g 1db = 6.5db (typ.) ?high pae: h add = 28% (typ.) ?low im 3 = -46dbc@po = 28.5dbm ?broad band: 12.7 ~ 13.2ghz ?impedance matched zin/zout = 50 w ?hermetically sealed description the FLM1213-8F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM1213-8F x, ku-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( ? c) 40 50 30 20 10 total power dissipation (w) output power & im 3 vs. input power v ds =10v f1 = 13.2 ghz f2 = 13.21 ghz 2-tone test 19 23 21 25 27 input power (s.c.l.) (dbm) s.c.l.: single carrier level output power (s.c.l.) (dbc) -20 -30 -40 -50 25 27 29 31 33 35 im 3 (dbc) im 3 p out 12.7 12.8 12.9 13.0 13.1 13.2 36 37 35 39 38 40 frequency (ghz) output power (dbm) output power vs. frequency v ds = 10v p 1db pin = 34.5dbm 32.5dbm 30.5dbm 28.5dbm 23 25 27 29 31 33 35 30 32 34 36 38 40 30 15 45 input power (dbm) output power (dbm) h add (%) h add pout output power vs. input power v ds = 10v f = 12.95 ghz
3 FLM1213-8F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 ? +90 ? 0 ? -90 ? s 21 s 12 scale for |s 21 | scale for |s 12 | 0.2 0.1 100 10 1 2 3 4 13.3 13.3 13.2 13.2 13.0 13.0 13.1 13.1 12.7 12.7 12.9 12.9 12.8 12.8 12.6 12.6 13.4 13.4 12.5 ghz 12.5 ghz 13.3 13.3 13.2 13.2 13.0 13.0 13.1 13.1 12.7 12.7 12.9 12.9 12.8 12.8 12.6 12.6 13.4 13.4 12.5 ghz 12.5 ghz s-parameters v ds = 10v , i ds = 2200ma frequency s1 1 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 12500 .171 81.0 2.291 143.6 .059 163.7 .710 -18.0 12600 .109 47.9 2.344 129.3 .061 148.1 .681 -28.4 12700 .084 6.1 2.399 1 18.7 .068 134.6 .658 -36.7 12800 .094 -44.1 2.443 107.7 .071 122.9 .633 -45.3 12900 .143 -85.2 2.455 93.1 .076 107.5 .592 -57.1 13000 .194 -105.7 2.443 82.2 .082 97.0 .556 -66.3 13100 .248 -121.5 2.410 70.8 .084 85.3 .516 -75.7 13200 .322 -140.0 2.371 55.3 .089 67.2 .458 -89.4 13300 .373 -153.0 2.317 44.1 .088 55.7 .41 1 -99.3 13400 .432 -164.4 2.239 32.6 .086 44.5 .362 -1 10.1
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1 138, u.s.a. phone: (408) 232-9500 f ax: (408) 428-91 1 1 www .fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 f ax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. 1998 fujitsu compound semiconduct or, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLM1213-8F x, ku-band internally matched fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4
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