smd type ic smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source features integrated temperature sensor electrostatic discharge protection q101 compliant standard level compatible. absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 75 v drain-gate voltage r gs =20k v dgr 75 v gate-source voltage v gs 20 v drain current (dc) t mb =25 ,v gs =10v i d 120 a drain current (dc) t mb = 100 ,v gs =10v i d 75 a drain current (pulse peak value) *1 i dm 480 a total power dissipation t mb =25 p tot 272 w gate-source clamping current (continuous) 10 ma gate-source clamping current *3 50 ma fet to temperature sense diode isolation voltage v isol(fet-tsd) 100 v storage & operating temperature t stg ,t j -55to175 120 a 75 a pulsed reverse drain current *1 i drm 480 a non-repetitive avalanche energy *2 e ds(al)s 739 j thermal resistance junction to mounting base r th j-mb 0.55 k/w thermal resistance junction to ambient r th j-a 50 k/w *1tmb=25 ; pulsed; tp 10 s; *2 unclamped inductive load; i d =75a;v ds 75 v; v gs =10v;r gs = 50;starting tj = 25 *3 tp = 5 ms; =0.01 i dr reverse drain current (dc) t mb =25 i gs(cl) KUK7109-75ATE product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i d =0.25ma;v gs =0v;t j =25 75 v i d =0.25ma;v gs =0v;t j =-55 70 v i d =1ma;v ds =v gs ;t j =25 234v i d =1ma;v ds =v gs ;t j = 175 1v i d =1ma;v ds =v gs ;t j =-55 4.4 v v ds =75v;v gs =0v;t j =25 0.1 10 a v ds =75v;v gs =0v;t j = 175 250 a gate-source breakdown voltage v (br)gss i g = 1ma;-55 t j 175 20 22 v gs = 10 v; v ds =0v;tj=25 22 1000 na v gs = 10 v; v ds =0v;tj=175 10 a v gs =10v;i d =50a;tj=25 .89 m v gs =10v;i d =50a;t j = 175 19 m forward voltage; temperature sense diode v f i f = 250 ma 648 658 668 mv temperature coefficient temperature sense diode s f i f = 250 ma;-55 t j 175 -1.4 -1.54 -1.68 mv/k temperature sense diode forward voltage hysteresis v hys 125 ma i f 250 ma 25 32 50 mv total gate charge q g(tot) 121 nc gate-to-source charge q gs 20 nc gate-to-drain (miller) charge q gd 44 nc input capacitance c iss 4700 3760 pf output capacitance c oss 800 665 pf reverse transfer capacitance c rss 455 274 pf turn-on delay time t d(on) 35 ns rise time t r 108 ns turn-off delay time t d(off) 185 ns fall time t f 100 ns internal drain inductance l d measured from upper edge of drain mounting base to center of die 2.5 nh internal source inductance l s measured from source lead to source bond pad 7.5 nh source-drain (diode forward) voltage v sd i s = 25a; v gs = 0 v 0.85 1.2 v reverse recovery time t rr i s =20a;-d if /d t = -100 a/s; 75 ns recovered charge q r v gs =-10v;v ds = 30 v 270 nc drain-source breakdown voltage v (br)dss v gs(th) gate-source threshold voltage v dd =30v;r l =1.2;v gs =10v;r g = 10 r dson drain-source on-state resistance zero gate voltage drain current i dss v gs =10v;v dd =60v;i d =25a gate-source leakage current i gss v gs =0v;v ds =25v;f=1mhz smd type ic smd type transistors KUK7109-75ATE product specification 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com
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