preliminary notice: this is not a final specification. some parametric limits are subject to change. jan.1999 FX50SMJ-2 outline drawing dimensions in mm to-3p application motor control, lamp control, solenoid control dc-dc converter, etc. C100 20 C50 C200 C50 C50 C200 150 C55 ~ +150 C55 ~ +150 4.8 v gs = 0v v ds = 0v l = 30 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25c) parameter conditions ratings unit ? 4v drive ? v dss ............................................................. C100v ? r ds (on) (max) ................................................ 50m w ? i d .................................................................... C50a ? integrated fast recovery diode (typ.) .........100ns 15.9 max 4.5 1.5 f 3.2 5.0 20.0 19.5 min 2 1.0 5.45 4.4 0.6 2.8 5.45 2 4 4 g 1 1 1 2 2 2 3 3 3 gate drain source drain 4 4 4 mitsubishi pch power mosfet FX50SMJ-2 high-speed switching use
preliminary notice: this is not a final specification. some parametric limits are subject to change. jan.1999 v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns C100 C1.0 C1.5 39 47 C0.98 49.2 11130 896 480 57 118 828 380 C1.0 100 0.1 C0.1 C2.0 50 61 C1.25 C1.5 0.83 electrical characteristics (tch = 25c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = C1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = C100v, v gs = 0v i d = C1ma, v ds = C10v i d = C25a, v gs = C10v i d = C25a, v gs = C4v i d = C25a, v gs = C10v i d = C25a, v ds = C10v v ds = C10v, v gs = 0v, f = 1mhz v dd = C50v, i d = C25a, v gs = C10v, r gen = r gs = 50 w i s = C25a, v gs = 0v channel to case i s = C50a, dis/dt = 100a/ m s performance curves 0 50 100 150 200 250 0 200 50 100 150 ?0 1 ? ? ? ? ?0 0 ? ? ? ?0 2 ? ? ? ? ? ? ? ?0 1 ? ?? ? ?0 0 ? ?? ? ? ?0 2 ? ?? tw = 10 m s t c = 25? single pulse 100 m s 10ms 1ms dc 0 ?0 ?0 ?0 ?0 ?00 0 2 4 6 8 10 p d = 150w v gs = ?0v tc = 25? pulse test ?v ?v ?v ?v ?v 0 ?0 ?0 ?0 ?0 ?0 0 ?.0 ?.0 ?.0 ?.0 ?.0 ?v ?v ?v ?v ?v p d = 150w v gs = ?0v tc = 25? pulse test power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) mitsubishi pch power mosfet FX50SMJ-2 high-speed switching use
preliminary notice: this is not a final specification. some parametric limits are subject to change. jan.1999 0 ? ? ? ? ?0 0 2 4 6 8 10 i d = ?00a tc = 25? pulse test ?0a ?5a ?0 0 ?0 1 ? ? ? ? ?0 2 ? ? ? ? 10 0 10 1 2 3 5 7 10 2 2 3 5 7 t c = 25? 75? 125? v ds = ?0v pulse test 0 20 40 60 80 100 ?0 0 ? ?0 1 ? ? ? ? ?0 2 ? ? ? v gs = ?v tc = 25? pulse test ?0v 0 ?0 ?0 ?0 ?0 ?00 0 2 4 6 8 10 tc = 25? v ds = ?0v pulse test 10 3 3 5 7 ?0 0 ? ? ? ?0 2 ? ? ? ? ?0 1 ? ? ? ? ? ? 2 10 4 3 5 7 2 2 ciss coss crss tch = 25? v gs = 0v f = 1mh z ?0 1 ? ? ? ? ? ? ? ? ?0 0 ? 10 2 2 3 5 7 10 3 2 2 3 5 7 t d(on) t r t d(off) t f tch = 25? v gs = ?0v v dd = ?0v r gen = r gs = 50 w on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) mitsubishi pch power mosfet FX50SMJ-2 high-speed switching use
preliminary notice: this is not a final specification. some parametric limits are subject to change. jan.1999 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? p dm tw d = t tw t d = 1.0 0.5 0.2 0.1 0.02 0.05 0.01 single pulse 0 ? ? ? ? ?0 0 40 80 120 160 200 v ds = ?0v ?0v ?0v tch = 25? i d = ?0a 0 ?0 ?0 ?0 ?0 ?00 0 ?.4 ?.8 ?.2 ?.6 ?.0 t c = 25? 75? 125? v gs = 0v pulse test 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = ?0v i d = 1/2i d pulse test 0 ?.8 ?.6 ?.4 ?.2 ?.0 ?0 0 50 100 150 v ds = ?0v i d = ?ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = ?ma gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) mitsubishi pch power mosfet FX50SMJ-2 high-speed switching use
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