TPCS8213 2007-01-16 1 toshiba field effect transistor silicon n-channel mos type (u-mos ) TPCS8213 lithium ion battery applications ? small footprint due to a small and thin package ? low drain-source on-resistance: r ds (on) = 8.4 m ? (typ.) ? high forward transfer admittance: |y fs | = 13 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 20 v) ? enhancement-mode: v th = 0.5~1.4 v (v ds = 10 v, i d = 200 a) ? common drain absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 20 v drain-gate voltage (r gs = 20 k ? ) v dgr 20 v gate-source voltage v gss 12 v dc (note 1) i d 6 drain current pulse (note 1) i dp 24 a single-device operation (note 3a) p d (1) 1.1 drain power dissipation (t = 10 s) (note 2a) single-device value at dual operation (note 3b) p d (2) 0.75 w single-device operation (note 3a) p d (1) 0.6 drain power dissipation (t = 10 s) (note 2b) single-device value at dual operation (note 3b) p d (2) 0.35 w single-pulse avalanche energy (note 4) e as 9.4 mj avalanche current i ar 6 a repetitive avalanche energy single-device value at dual operation (note 2a, 3b, 5) e ar 0.075 mj channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: for notes 1 to 5, see the next page. using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. warning handling precaution for power mosfet in use of protection circ uit for battery pack flame-retardant resins of ul94-v0 flammability class are used i n packages, however, they are not noncombustible.use a unit, for example ptc thermistor, which ca n shut off the power supply if a short-circuit occurs. if the power supply is not shut off on th e occurring short-circuit,a large short-circuit current will flow continuously, which may cause t he device to catch fire or smoke. unit: mm jedec ? jeita ? toshiba 2-3r1e weight: 0.035 g (typ.) circuit configuration 8 7 6 5 1 2 3 4
TPCS8213 2007-01-16 2 thermal characteristics characteristic symbol max unit single-device operation (note 3a) r th (ch-a) (1) 114 thermal resistance, channel to ambient (t = 10 s) (note 2a) single-device value at dual operation (note 3b) r th (ch-a) (2) 167 c/w single-device operation (note 3a) r th (ch-a) (1) 208 thermal resistance, channel to ambient (t = 10 s) (note 2b) single-device value at dual operation (note 3b) r th (ch-a) (2) 357 c/w marking (note 6) note 1: ensure that the channel temperature does not exceed 150c. note 2: a) device mounted on a glass-epoxy board (a) b) device mounted on a glass-epoxy board (b) (a) (b) note 3: a) the power dissipation and thermal resistance values are shown for a single device. (during single-device operation, power is applied to one device only.) b) the power dissipation and thermal resistance values are shown for a single device. (during dual operation, power is applied to both devices evenly.) note 4: v dd = 16 v, t ch = 25c (initial), l = 0.2 mh, r g = 25 ? , i ar = 6 a note 5: repetitive rating: pulse width limited by max channel temperature note 6: the circle ? ? on lower right of the marking indicates pin 1. type s8213 fr-4 25.4 25.4 0.8 (unit: mm) fr-4 25.4 25.4 0.8 (unit: mm) lot no. * weekly code (three digits): week of manufacture (01 for the first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year)
TPCS8213 2007-01-16 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 v ? ? 10 a drain cutoff current i dss v ds = 20 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 20 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ? 12 v 8 ? ? v gate threshold voltage v th v ds = 10 v, i d = 200 a 0.5 ? 1.4 v v gs = 2.5 v, i d = 4.2 a ? 11 18 v gs = 4.0 v, i d = 4.8 a ? 8.7 13 drain-source on-resistance r ds (on) v gs = 4.5 v, i d = 4.8 a ? 8.4 12 m ? forward transfer admittance |y fs | v ds = 10 v, i d = 3.0 a 6.5 13 ? s input capacitance c iss ? 3140 ? reverse transfer capacitance c rss ? 385 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 425 ? pf rise time t r ? 20 ? turn-on time t on ? 30 ? fall time t f ? 23 ? switching time turn-off time t off duty < = = 10 s ? 84 ? ns total gate charge (gate-source plus gate-drain) q g ? 49 ? gate-source charge 1 q gs1 ? 6 ? gate-drain (?miller?) charge q gd v dd ? = 5 v, i d = 6 a ? 13 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 24 a forward voltage (diode) v dsf i dr = 6 a, v gs = 0 v ? ? ? 1.2 v r l = 3.3 ? v dd ? ? i d = 3 a v out
TPCS8213 2007-01-16 4 10 12 0.8 1.0 4 5 3 forward transfer admittance |y fs | (s) drain ? source voltage v ds (v) drain ? source voltage v ds (v) i d ? v ds drain current i d (a) drain ? source voltage v ds (v) i d ? v ds drain currnet i d (a) gate ? source voltage v gs (v) i d ? v gs drain current i d (a) gate ? source voltage v gs (v) v ds ? v gs drain current i d (a) |y fs | ? i d drain current i d (a) r ds (on) ? i d drain ? source on-resistance r ds (on) (m ? ) 0 common source ta = 25c pulse test 0 2 4 6 0.1 0.3 0.5 3 6 i d = 1.5 a 12 0.4 0 common source ta = 25c, pulse test v gs = 1.5 v 1.6 1.7 1.8 2 4.5 0 0.2 0.4 0.6 2 4 6 8 10 0 common source ta = 25c pulse test 0123 4 8 12 16 20 0 common source v ds = 10 v pulse test 0 1 2 2 4 8 10 12 ta = ? 55c 100 25 1 common source v ds = 10 v pulse test 0.1 3 100 10 100 ta = ? 55c 25 100 1.9 2.5 3.1 4 4.5 2.1 3.1 4 2 1.9 1.8 1.7 1.6 v gs = 1.5 v 6 0.2 8 50 30 5 3 0.3 0.5 1 5 10 30 50 1 0.1 10 100 50 30 5 3 3 100 0.3 0.5 1 5 10 30 50 2.2 2.5 common source ta = 25c pulse test v gs =
TPCS8213 2007-01-16 5 80 160 120 40 60 50 ambient temperature ta (c) r ds (on) ? ta drain ? source on-resistance r ds (on) (m ? ) drain ? source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain ? source voltage v ds (v) c ? v ds capacitance c (pf) ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) ambient temperature ta (c) p d ? ta drain power dissipation p d (w) gate ? source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain ? source voltage v ds (v) common source ta = 25c pulse test 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 v gs = ? 1 v 5 0 10 0 ? 80 ? 40 0 10 20 30 40 80 120 160 0 common source v ds = 10 v i d = 200 a pulse test ? 80 ? 40 0 40 1.6 2.0 1.2 0.4 0.8 0 0 0.2 0.4 0.6 0.8 1 1.2 50 100 200 150 3 1 1 10 100 50 30 5 3 0.1 0.5 0.3 (1) (4) (3) (2) device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) t = 10 s common source i d = 6 a ta = 25c, pulse test 02030 0 4 8 10 v dd = 16 v v ds 0 8 16 20 4 4 8 v dd = 16 v 10 12 4 6 2 v gs 8 common source pulse test 2.5 i d = 6 a v gs = 4, 4.5 v 3 1.5 0.1 100 1000 10000 1 10 100 10 common source ta = 25c v gs = 0 v f = 1 mhz c iss c oss c rss
TPCS8213 2007-01-16 6 r th ? t w pulse width t w (s) drain ? source voltage v ds (v) transient thermal impedance r th (c/w) drain current i d (a) 0.1 1 10 100 0.1 1 10 100 i d max (pulse) * 10 ms * 1 ms * v dss max 0.1 0.001 0.01 0.1 1 10 100 1000 1 0.3 0.5 3 5 10 30 50 100 300 1000 ( 1 ) ( 2 ) ( 3 ) ( 4 ) 500 single pulse safe operating area device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) * single pulse ta = 25c curves must be derated linearly with increase in temperature. single-device value at dual operation (note 3b)
TPCS8213 2007-01-16 7 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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