n-channel alphamos q1 q2 30v 30v i d (at v gs =10v) 16a 18a r ds(on) (at v gs =10v) <10.2m w <7.7m w r ds(on) (at v gs = 4.5v) <15.8m w <11.6m w 100% uis tested 100% rg tested ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant absolute maximum ratings t a =25c unless otherwise noted v ds top view bottom view symbol v ds v gs i dm i as e as v ds spike v spike t j , t stg parameter symbol typ q1 max q1 typ q2 max q2 t 10s 40 50 40 50 steady-state 70 90 70 90 steady-state r q jc 4.5 5.4 4.2 5 100ns maximum junction-to-case c/w c/w maximum junction-to-ambient a d r q ja maximum junction-to-ambient a c/w parameter 20 power dissipation b p d t c =25c power dissipation a p dsm 19 t a =70c t a =25c v a 30 7.8 12 20 v pulsed drain current c absolute maximum ratings t a =25c unless otherwise noted avalanche energy l=0.05mh c 3.0 mj 15 4.1 avalanche current c continuous drain current 9 i dsm units 25 36 36 a max q2 72 13 a v 18 10 2.5 14 2.5 units w w thermal characteristics t c =100c max q1 gate-source voltage drain-source voltage continuous drain current g 64 16 i d t c =25c t c =100c 0.9 0.9 23 junction and storage temperature range -55 to 150 c 25 9 t a =70c t a =25c 30v dual asymmetric AON7934 general description features www.freescale.net.cn 1 / 10
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.2 v 8.3 10.2 t j =125c 11.2 13.7 12.4 15.8 m w g fs 50 s v sd 0.7 1 v i s 16 a c iss 485 pf c oss 235 pf c rss 32 pf r g 0.9 1.8 2.7 w q g (10v) 8 11 nc q g (4.5v) 3.9 5.3 nc q gs 1.1 nc q gd 2.1 nc t d(on) 3.5 ns t r 2.8 ns t 16.3 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.2 w , r =3 w gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance total gate charge v gs =10v, v ds =15v, i d =13a gate source charge gate drain charge total gate charge i s =1a,v gs =0v v ds =5v, i d =13a v gs =4.5v, i d =10a forward transconductance diode forward voltage v gs =10v, i d =13a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w v gs =0v, v ds =15v, f=1mhz switching parameters q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v t d(off) 16.3 ns t f 3 ns t rr 9.9 ns q rr 12.9 nc body diode reverse recovery charge i f =13a, di/dt=500a/ m s turn-off delaytime r gen =3 w turn-off fall time i f =13a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 2 / 10
q1-channel: typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 id(a) v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 0 2 4 6 8 10 12 14 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =10a v gs =10v i d =13a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 4v 10v 3.5v 6v 8v 4.5v 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =13a 25 c 125 c n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 3 / 10
q1-channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 1ms 100us dc r ds(on) limited t j(max) =150 c t c =25 c 10 m s 0 2 4 6 8 10 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =15v i d =13a t j(max) =150 c t c =25 c figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =5.4 c/w n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 4 / 10
q1-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 0 25 50 75 100 125 150 current rating id(a) t case (c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =90 c/w n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 5 / 10
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.2 v 6.3 7.7 t j =125c 8.4 10.3 9.1 11.6 m w g fs 100 s v sd 0.7 1 v i s 18 a c iss 807 pf c oss 314 pf c rss 40 pf r g 0.6 1.3 2 w q g (10v) 12.9 17.5 nc q g (4.5v) 6 8.5 nc q gs 2.1 nc q gd 3 nc t d(on) 4.8 ns t r 3.3 ns t 18.8 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1 w , r =3 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge i s =1a,v gs =0v gate source charge gate drain charge v gs =10v, v ds =15v, i d =15a reverse transfer capacitance i d =250 m a, v gs =0v diode forward voltage v ds =v gs i d =250 m a v ds =0v, v gs = 20v gate-body leakage current static drain-source on-resistance i dss q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage zero gate voltage drain current m a r ds(on) m w v ds =5v, i d =15a v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge forward transconductance v gs =4.5v, i d =10a v gs =10v, i d =15a t d(off) 18.8 ns t f 3.3 ns t rr 11.3 ns q rr 15 nc body diode reverse recovery charge i f =15a, di/dt=500a/ m s turn-off delaytime r gen =3 w turn-off fall time i f =15a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 6 / 10
q2-channel: typical electrical and thermal characteristics 17 5 2 10 0 18 0 10 20 30 40 50 60 0 1 2 3 4 5 id(a) v gs (volts) figure 2: transfer characteristics (note e) 4 5 6 7 8 9 10 0 3 6 9 12 15 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =10a v gs =10v i d =15a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 5v 10v 8v vgs=3v 4v 4.5v 40 1.00e-03 1.00e-02 1.00e-01 1.00e+00 1.00e+01 1.00e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =15a 25 c 125 c n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 7 / 10
q2-channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =15a t j(max) =150 c t c =25 c 40 figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =5 c/w n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 8 / 10
q2-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note g) t a =25 c 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note g) r q ja =90 c/w n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 9 / 10
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr n-channel alphamos 30v dual asymmetric AON7934 www.freescale.net.cn 10 / 10
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