AON7934 30v dual asymmetric n-channel alphamos general description product summary q1 q2 30v 30v i d (at v gs =10v) 16a 18a r ds(on) (at v gs =10v) <10.2m w <7.7m w r ds(on) (at v gs = 4.5v) <15.8m w <11.6m w 100% uis tested application 100% rg tested ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al absolute maximum ratings t a =25c unless otherwise noted v ds power dfn3x3a top view bottom view g1 d1 d1 d1 d1 (s1/d2) g2 s2 s2 s2 top view bottom view symbol v ds v gs i dm i as e as v ds spike v spike t j , t stg parameter symbol typ q1 max q1 typ q2 max q2 t 10s 40 50 40 50 steady-state 70 90 70 90 steady-state r q jc 4.5 5.4 4.2 5 100ns maximum junction-to-case c/w c/w maximum junction-to-ambient a d r q ja maximum junction-to-ambient a c/w parameter 20 power dissipation b p d t c =25c power dissipation a p dsm 19 t a =70c t a =25c va 30 7.8 12 20 v pulsed drain current c absolute maximum ratings t a =25c unless otherwise noted avalanche energy l=0.05mh c 3.0 mj 15 4.1 avalanche current c continuous drain current 9 i dsm units 25 36 36 a max q2 72 13 av 18 10 2.5 14 2.5 units ww thermal characteristics t c =100c max q1 gate-source voltage drain-source voltage continuous drain current g 64 16 i d t c =25c t c =100c 0.9 0.9 23 junction and storage temperature range -55 to 150 c 25 9 t a =70c t a =25c rev0 : april 2012 www.aosmd.com page 1 of 10
AON7934 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.2 v 8.3 10.2 t j =125c 11.2 13.7 12.4 15.8 m w g fs 50 s v sd 0.7 1 v i s 16 a c iss 485 pf c oss 235 pf c rss 32 pf r g 0.9 1.8 2.7 w q g (10v) 8 11 nc q g (4.5v) 3.9 5.3 nc q gs 1.1 nc q gd 2.1 nc t d(on) 3.5 ns t r 2.8 ns t 16.3 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.2 w , r =3 w gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance total gate charge v gs =10v, v ds =15v, i d =13a gate source charge gate drain charge total gate charge i s =1a,v gs =0v v ds =5v, i d =13a v gs =4.5v, i d =10a forward transconductance diode forward voltage v gs =10v, i d =13a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w v gs =0v, v ds =15v, f=1mhz switching parameters q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v t d(off) 16.3 ns t f 3 ns t rr 9.9 ns q rr 12.9 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =13a, di/dt=500a/ m s turn-off delaytime r gen =3 w turn-off fall time i f =13a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. rev0 : april 2012 www.aosmd.com page 2 of 10
AON7934 q1-channel: typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 id(a) v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 0 2 4 6 8 10 12 14 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =10a v gs =10v i d =13a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 4v 10v 3.5v 6v 8v 4.5v 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =13a 25 c 125 c rev 0: april 2012 www.aosmd.com page 3 of 10
AON7934 q1-channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 1ms 100us dc r ds(on) limited t j(max) =150 c t c =25 c 10 m s 0 2 4 6 8 10 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =15v i d =13a t j(max) =150 c t c =25 c figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =5.4 c/w rev 0: april 2012 www.aosmd.com page 4 of 10
AON7934 q1-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 0 25 50 75 100 125 150 current rating id(a) t case (c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =90 c/w rev 0: april 2012 www.aosmd.com page 5 of 10
AON7934 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.2 v 6.3 7.7 t j =125c 8.4 10.3 9.1 11.6 m w g fs 100 s v sd 0.7 1 v i s 18 a c iss 807 pf c oss 314 pf c rss 40 pf r g 0.6 1.3 2 w q g (10v) 12.9 17.5 nc q g (4.5v) 6 8.5 nc q gs 2.1 nc q gd 3 nc t d(on) 4.8 ns t r 3.3 ns t 18.8 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1 w , r =3 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge i s =1a,v gs =0v gate source charge gate drain charge v gs =10v, v ds =15v, i d =15a reverse transfer capacitance i d =250 m a, v gs =0v diode forward voltage v ds =v gs i d =250 m a v ds =0v, v gs = 20v gate-body leakage current static drain-source on-resistance i dss q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage zero gate voltage drain current m a r ds(on) m w v ds =5v, i d =15a v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge forward transconductance v gs =4.5v, i d =10a v gs =10v, i d =15a t d(off) 18.8 ns t f 3.3 ns t rr 11.3 ns q rr 15 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =15a, di/dt=500a/ m s turn-off delaytime r gen =3 w turn-off fall time i f =15a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0: april 2012 www.aosmd.com page 6 of 10
AON7934 q2-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 50 60 0 1 2 3 4 5 id(a) v gs (volts) figure 2: transfer characteristics (note e) 4 5 6 7 8 9 10 0 3 6 9 12 15 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =10a v gs =10v i d =15a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 5v 10v 8v vgs=3v 4v 4.5v 40 1.00e-03 1.00e-02 1.00e-01 1.00e+00 1.00e+01 1.00e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =15a 25 c 125 c rev 0: april 2012 www.aosmd.com page 7 of 10
AON7934 q2-channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =15a t j(max) =150 c t c =25 c 40 figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =5 c/w rev 0: april 2012 www.aosmd.com page 8 of 10
AON7934 q2-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note g) t a =25 c 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note g) r q ja =90 c/w rev 0: april 2012 www.aosmd.com page 9 of 10
AON7934 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0: april 2012 www.aosmd.com page 10 of 10
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