? IRG7PH28UD1PBF irg7ph28ud1mpbf 1 www.irf.com ? 2012 international rectifier january 8, 2013 IRG7PH28UD1PBF to-247ac g c e g ? g c e g irg7ph28ud1mpbf to-247ad g c e gate collector emitter base part number package type standard pack orderable part number form quantity IRG7PH28UD1PBF to-247ac tube 25 IRG7PH28UD1PBF irg7ph28ud1mpbf to-247ad tube 25 irg7ph28ud1mpbf v ces = 1200v i c = 15a, t c = 100c t j(max) = 150c v ce(on) typ. = 1.95v e g n-channel c ? ? insulated gate bipolar transis tor with ultra-low vf diode for induction heating and so ft switching applications features ?? low v ce (on) trench igbt technology ?? low switching losses ?? square rbsoa ?? ultra-low v f diode ?? 1300vpk repetitive transient capacity ?? 100% of the parts tested for i lm ? ?? positive v ce (on) temperature co-efficient ?? tight parameter distribution ?? lead-free package benefits ?? device optimized for induction heating and soft switching applications ?? high efficiency due to low v ce(on) , low switching losses and ultra-low v f ?? rugged transient performance for increased reliability ?? excellent current sharing in parallel operation ?? low emi absolute maximum ratings ?? parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 30 i c @ t c = 100c continuous collector current 15 i cm pulse collector current, v ge = 15v ?? 100 i lm clamped inductive load current, v ge = 20v ? 60 a i f @ t c = 25c diode continuous forward current 30 i f @ t c = 100c diode continuous forward current 15 i fm diode maximum forward current ? 60 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 115 w p d @ t c = 100c maximum power dissipation 46 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) v (br) transient repetitive transient collector-to-emitter voltage ? 1300
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 2 www.irf.com ? 2012 international rectifier january 8, 2013 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.4 ? v/c v ge = 0v, i c = 1ma (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.95 2.30 v i c = 15a, v ge = 15v, t j = 25c ? 2.4 ? ? i c = 15a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 350a gfe forward transconductance ? 13 ? s v ce = 50v, i c = 15a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 100 a v ge = 0v, v ce = 1200v ?? ? 100 ? v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop ? 1.1 1.2 v i f = 15a ? 1.0 ? i f = 15a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 60 90 i c = 15a q ge gate-to-emitter charge (turn-on) ? 10 15 nc ? v ge = 15v q gc gate-to-collector charge (turn-on) ? 27 40 ? v cc = 600v e off turn-off switching loss ? 543 766 j i c = 15a, v cc = 600v, v ge = 15v r g = 22 ? , l = 1.0mh, t j = 25c t d(off) turn-off delay time ? 229 ? ns ? energy losses include tail & diode ? t f fall time ? 62 ? ? reverse recovery e off turn-off switching loss ? 939 ? j i c = 15a, v cc = 600v, v ge =15v r g = 22 ? , l = 1.0mh, t j = 150c t d(off) turn-off delay time ? 272 ? ns energy losses include tail & diode ? t f fall time ? 167 ? ? reverse recovery c ies input capacitance ? 1160 ? v ge = 0v c oes output capacitance ? 55 ? pf v cc = 30v c res reverse transfer capacitance ? 30 ? f = 1.0mhz t j = 150c, i c = 60a rbsoa reverse bias safe operating area full square v cc = 960v, vp 1200v rg = 22 ? , v ge = +20v to 0v notes: ? v cc = 80% (v ces ), v ge = 20v, l = 25h, r g = 22 ? . ? pulse width limited by max. junction temperature. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? r ? is measured at t j of approximately 90c. ? fbsoa operating conditions only. ? v ge = 0v, t j = 75c, pw 10s. thermal resistance ??? parameter min. typ. max. units r jc (igbt) junction-to-case (igbt) ? ??? ??? 1.09 r jc (diode) junction-to-case (diode) ? ??? ??? 1.35 c/w r cs case-to-sink (flat, greased surface) ??? 0.24 ??? r ja junction-to-ambient (typical socket mount) ??? ??? 40
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 3 www.irf.com ? 2012 international rectifier january 8, 2013 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 i c ( a ) 25 50 75 100 125 150 t j , temperature (c) 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e i c = 350a fig. 1 - maximum dc collector current vs. case temperature 10 100 1000 10000 v ce (v) 1 10 100 i c ( a ) 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 4 - reverse bias soa t j = 150c; v ge = 20v 25 50 75 100 125 150 t c (c) 0 20 40 60 80 100 120 p t o t ( w ) fig. 2 - power dissipation vs. case temperature 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 3 - typical gate threshold voltage vs. junction temperature fig. 6 - typ. igbt output characteristics t j = 25c; tp = 20s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 20s
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 4 www.irf.com ? 2012 international rectifier january 8, 2013 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v f (v) 0.1 1 10 100 i f ( a ) 25c 150c fig. 8 - typ. diode forward voltage drop characteristics 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 7.5a i ce = 15a i ce = 30a fig. 7 - typ. igbt output characteristics t j = 150c; tp = 20s fig. 9 - typical v ce vs. v ge t j = -40c 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 7.5a i ce = 15a i ce = 30a fig. 10 - typical v ce vs. v ge t j = 25c 456789101112 v ge (v) 0 10 20 30 40 50 60 70 i c e ( a ) t j = 150c t j = 25c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 20s 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 7.5a i ce = 15a i ce = 30a fig. 11 - typical v ce vs. v ge t j = 150c
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 5 www.irf.com ? 2012 international rectifier january 8, 2013 0 5 10 15 20 25 30 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f 0 20 40 60 80 100 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f fig. 14 - typ. switching time vs. i c t j = 150c; l = 1.0mh; v ce = 600v, r g = 22 ? ; v ge = 15v 0 5 10 15 20 25 30 i c (a) 0 400 800 1200 1600 2000 e n e r g y ( j ) e off 0 20406080100 rg ( ? ) 800 1000 1200 1400 1600 1800 e n e r g y ( j ) e off fig. 15 - typ. energy loss vs. r g t j = fig. 13 - typ. energy loss vs. i c t j = 150c; l = 1.0mh; v ce = 600v, r g = 22 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 1.0mh; v ce = 600v, i ce = 15a; v ge = 15v 0 100 200 300 400 500 600 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 10203040506070 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v fig. 18 - typical gate charge vs. v ge i ce = 15a
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 6 www.irf.com ? 2012 international rectifier january 8, 2013 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 19 - maximum transient thermal impedance, junction-to-case (igbt) fig. 20 - maximum transient thermal impedance, junction-to-case (diode) ri (c/w) ? i (sec) ? 0.00756 0.000005 0.56517 0.000677 0.54552 0.003514 0.25085 0.019551 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.015352 0.000008 0.360775 0.000223 0.431394 0.002475 0.282479 0.01715 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 7 www.irf.com ? 2012 international rectifier january 8, 2013 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg vcc dut / driver diode clamp / dut -5v switching loss fig.c.t.3 - switching loss circuit g force c sense 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.4 - bvces filter circuit fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3 -5 0 5 10 15 20 25 30 35 40 -100 0 100 200 300 400 500 600 700 800 -0.5 0 0.5 1 i ce (a) v ce (v) time(s) 90% i ce 5% v ce 5% i ce eoff loss tf
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 8 www.irf.com ? 2012 international rectifier january 8, 2013 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 9 www.irf.com ? 2012 international rectifier january 8, 2013 to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part num ber date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lo t co de n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application. 2x c "a" "a" e e2/2 q e2 2x l1 l d a e 2x b2 3x b lead tip see view "b" b4 b a ? .010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a view: "b" section: c-c, d-d, e-e (b, b2, b4) (c) base meta l plating view: "a" - "a"
? IRG7PH28UD1PBF/irg7ph28ud1mpbf 10 www.irf.com ? 2012 international rectifier january 8, 2013 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial ? (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes to-247ad n/a ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release.
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