View L2N60_7526676.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

leshan radio company, ltd. 600v n-channel mosfet ? description ? features

!"# $
$% &

' (

? ordering information ds(on) = 5.0 @v gs = 10v L2N60 package 1 2 3 packing g d s tube g d s tube order number pin assignment L2N60f L2N60p to-220 to-220f gd s L2N60i to-251 L2N60d to-252 g d s tube g d s tube 2 3 1 rev .o 1/9
leshan radio company, ltd. 7 L2N60 absolute maximum ratings % )*+%

,-

./

" -00 ' - -
%
%

' -1 -
%
2 34
56 " 700 7
0"
8 0 0
2
8
34
6 59 : ' #
%
34
56 8 # #

8
34
56 9* (
2;-# (
34
<6 9* "(
: 07 =

0

#
**
>5* +% $ 1.

5(? *
< +% thermal characteristics /w /w mj t c =25 : total power dissipation derate above 25c p d : L2N60i L2N60f 34 23 0.27 0.18 thermal resistance, junction-to-case c thermal resistance, junction-to-ambient c units L2N60i/d L2N60f symbol parameter 5.56 120 3.7 112 w/ w unit 0 2
#

@

-
0"
! " ? < " L2N60p 44 0.35 L2N60d 34 0.27 L2N60p 2.26 62.5 r jc r ja rev .o 2/9
leshan radio company, ltd. electrical characteristics % )*+%

notes: 5#

#

a2

./

$)<b' 0 )*? " -- )5<"# 7 )* , 0

: )*+% <' 0- 9 (
( " -- c" -00 0

: )*+% 92
a2
< -
d *8

symbol parameter test conditions min typ max units off characteristics c" -00 -
0c;
"
" 70 )"' - )* ! " c" -00 ( : c;
"

%
' - )* #

*+% 9 "(+% ' -00 e7
"
-
%
" -0 )!"" 70 )" 5 " -0 )9?" % )5*+% 5 ' 700& 7
c$;%
& " 70 )<"" -0 )" 5
' 700# 7
c$;%
# " 70 )<"" -0 )" 5
on characteristics " 703
6 7
"
" -0 )" 70 ' - )* 9 " # -03
6 0

-
0 =
#

" 70 )5"' - )5 &0 &

" -0 )*"' - )5 34
96 * 0 dynamic characteristics % '

%

" -0 )*"" 70 )" )51b < 3
6
=
- " -- )<"' - ) # 7 )* 34
9*6

36
f
7
% " -0 )9?"' - )g* " 70 )5" 34
9*6 f f drain-source diode characteristics and maximum ratings ' 0 ' 01 " 0- -
0-&"
" 70 )"' 0 )g* 59 "
# # " 70 )"' 0 )g* ' & (
)5 ( 34
96 <
f % L2N60 =

%

< 9* & #
%

& 3 5.6 5< <
!

=
# 5
=- g< 5

=& 59< g
h< 5<
% 7
0%
% 7
-
% <<
% 1.%

-
0-&%
1.2-
0-&%
? # # % 5 9 * rev .o 3/9
same type as d. u. t. l v dd driver v gs r g - v ds d. u. t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms test circuits and waveforms leshan radio company, ltd. L2N60 rev .o 4/9
test circuits and waveforms (cont.) v gs d. u. t. r g 10v v ds r l v dd v ds 90% 10% v gs t d(o n ) t r t d(off) t f pulse width ? 1 ? s duty factor ? 0.1% fig. 2a switching test circuit 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 fig. 2b switching waveforms 50k ? 0.3 ? f dut v ds same type as d.u.t. 10v 0.2 ? f 12v charge q gs q gd q g v gs 3ma v g fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r d 10v v ds l v dd t p i as t p time bv dss fig. 4a unclamped inductive switching test circuit 3 3 3 fig. 4b unclamped inductive switching waveforms leshan radio company, ltd. L2N60 rev .o 5/9
typical characteristics 10 0 10 -1 10 -2 10 1 10 -1 10 0 drain-source voltage, v ds (v) drain current , i d (a) v gs top: 15.0v 10 .0 v 8 .0 v 7 .0 v 6 .5 v 6 .0 v bottorm : 5.5 v 10 0 10 -1 2 gate-source voltage, v gs (v) drain current, i d (a) transfer characteristics 46 810 -20 85 25 250 ? s pulse test t c =25 on-region characteristics v ds =50v 250 ? s pulse test 0 0 drain-source on-resistance, r ds(on) ( ) drain current, i d (a) 1 2 v gs =10v v gs =20v 2 4 8 10 12 on-resistance variation vs. drain current and gate voltage 6 3456 t j =25 : 10 0 10 -1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) body diode forward voltage variation vs. source current and temperature 1.6 25 : 0.4 0.6 0.8 1.0 1.2 1.4 125 : v gs =0v 250 ? s pulse test 500 0 10 -1 drain-source voltage, v (v) capacitance (pf) capacitance vs. drain-source voltage 400 100 10 0 10 1 c rss c oss c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd c iss v gs =0v f = 1mhz 300 200 0 gate-source voltage, v gs (v) total gate charge, q (nc) 2 61 0 i d =2.4a 8 10 12 gate charge vs. gate charge voltage 4 6 4 2 0 v ds =120v v ds =300v v ds =480v 8 leshan radio company, ltd. L2N60 rev .o 6/9
typical characteristics(cont.) -100 drain-source breakdown voltage, v dss (normalized) junction temperature, t j ( ) -50 50 200 v gs =10v i d =250 ? a 100 150 1.2 breakdown voltage vs. temperature 0 1.1 1.0 0.9 0.8 -100 drain-source on-resistance, r ds( on ) (normalized) junction temperature, t j ( ) -50 50 200 v gs =10v i d =4.05a 100 150 3.0 on-resistance vs. temperature 0 2.0 1. 0 0.5 0.0 1.5 2.5 10 1 10 0 10 -2 drain-source voltage, v ds (v) drain current, i d (a) max. safe operating area 10 2 10 1 10 0 d c 10 -1 100 ? s 1ms 10 3 operation in this area is limited by r ds(on) 10 ? s 10m s t c =25 t j =125 single pulse drain current, i d (a) case temperature, t c ( ) 75 100 150 max. drain current vs. case temperature 0. 0 125 50 25 0.5 1.0 1.5 2.0 square wave pulse duration, t 1 (s) thermal response, e jc (t) thermal response 10 0 10 -5 10 0 10 -1 10 -4 10 -3 10 -2 10 -1 10 1 single pulse d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t1 t2 e jc (t) = 2.78 /w max. duty factor, d=t1/t2 t jm -t c =p dm e jc (t) leshan radio company, ltd. L2N60 rev .o 7/9
to-220-3l to-220f-3l leshan radio company, ltd. unit:mm unit:mm 7 rev .o 8/9
to-252-2l )! : mm )! : mm to-251-3l 5.40.3 7.1 7.9 14.2 15.3 leshan radio company, ltd. 7 rev .o 9/9

▲Up To Search▲

Price & Availability of L2N60

	To Download L2N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .