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this is information on a product in full production. july 2012 doc id 022879 rev 3 1/19 19 stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 n-channel 650 v, 0.198 typ., 15 a mdmesh? v power mosfet in to-220fp, i2pak, to-220 and to-247 packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d stf18n65m5 710 v < 0.22 15 a STI18N65M5 stp18n65m5 stw18n65m5 to-220 to-220fp 1 2 3 1 2 3 tab i2pak 1 2 3 to-247 1 2 3 tab !-v $4!" ' 3 table 1. device summary order code marking package packaging stf18n65m5 18n65m5 to-220fp tu b e STI18N65M5 i2pak stp18n65m5 to-220 stw18n65m5 to-247 www.st.com
contents stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 2/19 doc id 022879 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 electrical ratings doc id 022879 rev 3 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit i2pak to-220 to-247 to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 15 15 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 9.4 9.4 (1) a i dm (1) drain current (pulsed) 60 60 (1) a p tot total dissipation at t c = 25 c 110 25 w dv/dt (2) 2. i sd 15 a, di/dt 400 a/s; v dspeak < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit i2pak to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 1.14 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd = 50 v) 210 mj
electrical characteristics stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 4/19 doc id 022879 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 7.5 a 0.198 0.22 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1240 32 3.2 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -99-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -30-pf r g intrinsic gate resistance f = 1 mhz open drain - 3 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 7.5 a, v gs = 10 v (see figure 20 ) - 31 8 14 - nc nc nc
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 electrical characteristics doc id 022879 rev 3 5/19 table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 9.5 a, r g = 4.7 , v gs = 10 v (see figure 21 and figure 24 ) - 36 7 9 11 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 15 60 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 15 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s v dd = 100 v (see figure 24 ) - 290 3.4 23.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 24 ) - 352 4 24 ns c a
electrical characteristics stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 6/19 doc id 022879 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for i2pak and to-220 figure 3. thermal impedance for i2pak and to-220 figure 4. safe operating area to220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area to-247 figure 7. thermal impedance to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am124 8 7v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am124 88 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am124 8 9v1
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 electrical characteristics doc id 022879 rev 3 7/19 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 20 25 v g s = 6 v v g s = 7 v v g s = 8 v v g s = 9, 10 v 3 0 3 5 am12472v1 i d 15 10 5 0 3 5 v g s (v) 7 (a) 4 6 8 20 25 9 v d s = 25 v 3 0 3 5 am124 8 6v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =520v i d =7.5a 3 00 200 100 0 400 500 v d s (v) v d s 25 3 0 12 am12474v1 r d s (on) 0.19 0.1 8 0.17 0.16 0 6 i d (a) ( ) 4 8 0.2 0.21 0.22 v g s =10v 0.2 3 0.24 2 10 12 14 am12475v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am12476v1 e o ss 2 1 0 0 v d s (v) ( j) 400 3 200 4 5 600 6 am124 8 4v1
electrical characteristics stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 8/19 doc id 022879 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. drain-source diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am12471v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s = 10v i d = 17.5 a am124 83 v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 0 0 20 r g ( ) ( j) 10 3 0 20 40 40 i d =9.5a v dd =400v eon eoff 60 v g s =10v 8 0 100 120 140 160 am124 8 5v1
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 test circuits doc id 022879 rev 3 9/19 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 10/19 doc id 022879 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 package mechanical data doc id 022879 rev 3 11/19 figure 25. to-220fp drawing 7012510_rev_k_b
package mechanical data stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 12/19 doc id 022879 rev 3 table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 package mechanical data doc id 022879 rev 3 13/19 figure 26. i2pak (to-262) drawing 00049 8 2_rev_h
package mechanical data stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 14/19 doc id 022879 rev 3 table 11. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 package mechanical data doc id 022879 rev 3 15/19 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 16/19 doc id 022879 rev 3 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 package mechanical data doc id 022879 rev 3 17/19 figure 28. to-247 drawing 0075 3 25_g
revision history stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 18/19 doc id 022879 rev 3 5 revision history table 13. document revision history date revision changes 01-mar-2012 1 first release. 11-jul-2012 2 the part numbers stb18n65m5 and std18n65m5 have been moved to a separate datasheet. the part numbers STI18N65M5 and stw18n65m5 in i2pak and to-247 packages have been added. document status promoted from preliminary data to production data. added section 2.1: electrical characteristics (curves) . 19-jul-2012 3 updated figure 8: output characteristics , figure 11: static drain- source on-resistance and figure 14: normalized gate threshold voltage vs temperature .
stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 doc id 022879 rev 3 19/19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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