2009. 11. 17 1/4 semiconductor technical data 2n7002a n channel enhancement mode field effect transistor revision no : 8 interface and switching application. features h high density cell design for low r ds(on) . h voltage controlled small signal switch. h rugged and reliable. h high saturation current capablity. maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. source 2. gate 3. drain electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i d =10 a 60 - - v zero gate voltage drain current i dss v ds =60v, v gs =0v - - 1 a gate-body leakage, forward i gssf v gs =20v, v ds =0v - - 1 a gate-body leakage, reverse i gssr v gs =-20v, v ds =0v - - -1 a characteristic symbol rating unit drain-source voltage v dss 60 v drain-gate voltage (r gs ? 1 ? ) v dgr 60 v gate-source voltage v gss ? 20 v drain current continuous i d 115 ma pulsed i dp 800 drain power dissipation p d 200 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? type name marking lot no. wb equivalent circuit
2009. 11. 17 2/4 2n7002a revision no : 8 electrical characteristics (ta=25 ? ) on characteristics (note 1) characteristic symbol test condition min. typ. max. unit gate threshold voltage v th v ds =v gs , i d =250 a 1 2.1 2.5 v drain-source on resistance r ds(on) v gs =10v, i d =500ma - 1.8 5 ? v gs =5v, i d =50ma - - 5 drain-source on voltage v ds(on) v gs =10v, i d =500ma - 0.9 2.5 v v gs =5v, i d =50ma - - 0.25 on state drain current i d(on) v gs =10v, v ds ? 2 v ds(on) 500 - - ma forward transconductance g fs v ds =2v ds(on) , i d =200ma 80 320 - ms dynamic characteristics characteristic symbol test condition min. typ. max. unit input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 20 50 pf reverse transfer capacitance c rss - 4 5 output capacitance c oss - 11 25 switching time turn-on time t on v dd =30v, r l =150 ? , i d =200ma, v gs =10v, r gen =25 ? - - 20 ns turn-off time t off - - 20 drain-source diode characteristics and maximum raings characteristic symbol test condition min. typ. max. unit maximum continuous drain-source diode forward current i s - - - 115 ma maximum pulsed drain-source diode forward current i sm - - - 800 ma drain-source diode forward voltage v sd v gs =0v, i s =115ma (note1) - 0.88 1.5 v note 1) pulse test : pulse width " 300 k , duty cycle " 2.0%
2009. 11. 17 3/4 2n7002a revision no : 8
2009. 11. 17 4/4 2n7002a revision no : 8
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