fdn304p general description this p - channel 1.8v specified mosfet uses fairchild?s advanced low voltage powertrench process. it has been optimized for battery power management applications. applications bat tery management load switch battery protection features ? 2.4 a, ? 20 v. r ds(on) = 52 m w @ v gs = ? 4.5 v r ds(on) = 70 m w @ v gs = ? 2.5 v r ds(on) = 100 m w @ v gs = ? 1.8 v fast switching speed esd protection diode high performance trench technology for ex tremely low r ds(on) supersot tm - 3 provides low r ds(on) and 30% higher power handling capability than sot23 in the same footprint g d s supersot -3 tm absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain - source volt age ? 20 v v gss gate - source voltage 8 v i d drain current ? continuous (note 1a) ? 2.4 a ? pulsed ? 10 maximum power dissipation (note 1a) 0.5 p d (note 1b) 0.46 w t j , t stg operating and storage junction temperature range ? 55 to +150 c thermal c haracteristics r q ja thermal resistance, junction - to - ambient (note 1a) 250 c/w r q jc thermal resistance, junction - to - case (note 1) 75 c/w package marking and ordering information device marking device reel size tape width quantity 04z fdn304p z 7?? 8mm 3000 units d s g smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain ? source breakdown voltage v gs = 0 v, i d = ? 250 m a ? 20 v d bv dss d t j breakdown voltage t emperature coefficient i d = ? 250 m a,referenced to 25 c ? 13 mv/ c i dss zero gate voltage drain current v ds = ? 16 v, v gs = 0 v ? 1 m a i gss gate ? body l eakage v gs = 8 v, v ds = 0 v 10 u a on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ? 250 m a ? 0.4 ? 0. 8 ? 1.5 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = ? 250 m a,referenced to 25 c 3 mv/ c r ds(on) static drain ? source on ? resistance v gs = ? 4.5 v, i d = ? 2.4 a v gs = ? 2.5 v, i d = ? 2.0 a v gs = ? 1.8v, i d = ? 1.8 a 36 47 65 52 70 100 m w i d( on) on ? state drain current v gs = ? 4.5 v, v ds = ? 5 v ? 10 a g fs forward transconductance v ds = ? 5 v, i d = ? 1.25 a 12 s dynamic characteristics c iss input capacitance 1310 pf c oss output capacitance 240 pf c rss reverse transfer capacitance v ds = ? 10 v, v gs = 0 v, f = 1.0 mhz 106 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 5.6 w switching characteristics (note 2) t d(on) turn ? on delay time 15 27 ns t r turn ? on rise time 15 27 ns t d(off) turn ? off delay time 40 64 ns t f turn ? off fall time v dd = ? 10 v, i d = ? 1 a, v gs = ? 4.5 v, r gen = 6 w 25 40 ns q g total gate charge 12 20 nc q gs gate ? source charge 2 nc q gd gate ? drain charge v ds = ? 10 v, i d = ? 2.4 a, v gs = ? 4.5 v 2 nc d rain ? source diode characteristics and maximum ratings i s maximum continuous drain ? source diode forward current ? 0.42 a v sd drain ? source diode forward voltage v gs = 0 v, i s = ? 0.42 (note 2) ? 0. 6 ? 1.2 v t rr reverse recovery time 18 ns q rr reverse recovery charge i f = ? 2.4 a, d if /d t = 100 a/s 7 nc notes: 1. r q ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. copper. b) 270c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 m s, duty cycle 2.0% 2of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com fdn304p smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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