pnp silicon planar medium power darlington transistor issue 1 ? feb 94 features * 100 volt v ceo * gain of 3k at i c =1 amp *p tot = 1 watt applications * lamp, solenoid and relay drivers * replacement of to126 and to220 darlington transistors refer to ztx704 for graphs absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -10 v peak pulse current i cm -4 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -120 v i c =-100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -100 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -10 v i e =-100 m a, i c =0 collector cut-off current i cbo -0.1 -10 m a m a v cb =-100v, i e =0 v cb =-100v, t amb =100c collector cut-off current i ces -10 m a v ces =-80v emitter cut-off current i ebo -0.1 m a v eb =-8v collector-emitter saturation voltage v ce(sat) -1.3 -2.5 v v i c =-1a, i b =-1ma* i c =-2a, i b =-2ma* base-emitter saturation voltage v be(sat) -1.8 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -1.7 v ic=-1a, v ce =-5v* static forward current transfer ratio h fe 3k 3k 3k 2k 30k i c =-10ma, v ce =-5v* i c =-100ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* transition frequency f t 160 mhz i c =-100ma, v ce =-10v f=20mhz b c e e-line to92 compatible FXT704 3-54
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