-5.7a UM6301 60 -60v 60m 60v 30m 1 n-ch and p-ch fast switching mosfets rating symbol parameter n-channel p-channel units v ds drain-source voltage v v gs gate-sou u ce voltage f 20 3 f 20 3 v i d @t c =25 continuous drain current, v gs @ 10v 1 a i d @t c =100 continuous drain current, v gs @ 10v 1 6 a i dm pulsed drain current 2 a eas single pulse avalanche energy 3 mj i as avalanche current a p d @t c =25 total power dissipation 4 w t stg storage temperature range -55 to 150 -55 to 150 t j operating junction temperature range -55 to 150 -55 to 150 symbol parameter 3 typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w 3 r jc thermal resistance junction-case /w 3 bvdss rdson id
n-ch and p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z z z load switch absolute maximum ratings thermal data sop8 pin configuration product summery 8a the UM6301 is the highest performance trench the UM6301 meet the rohs and green product high frequency point-of -load synchronous buck converter networking dc-dc power system 60 -60 8 5.7 -4.4 16 -11.5 34.5 51.2 22.6 -26.6 3.5 3.5 --- 36
=22.6a --- --- a a 15.2 --- --- mj --- 64 --- output capacitance input capacitance --- 4.6 --- turn-off delay time turn-on delay time gate-source charge --- --- rise time --- 6.31 --- total gate charge (4.5v) --- --- =0v , f=1mhz --- 3.2 6.4 =10a --- 21 --- s --- -5.24 --- --- gate threshold voltage . 2.5 v =8a --- 30 38 =10a --- 25 30 --- 0.063 --- =250ua 60 --- --- v 2 n-ch and p-ch fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d ? bv dss a? t j bvdss temperature coefficient reference to 25 , i d =1ma v/ v gs =10v , i d r ds(on) static drain-source on-resistance 2 v gs =4.5v , i d m : v gs(th) ? v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =250ua mv/ v ds =30v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =30v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =15v , i d r g gate resistance v ds =24v , v gs : q g q gs q gd gate-drain charge v ds =20v , v gs =4.5v , i d =10a nc t d(on) t r t d(off) t f fall time v dd =12v , v gs =10v , r g =3.3 : i d =5a ns c iss c oss c rss reverse transfer capacitance v ds =25v , v gs =0v , f=1mhz pf symbol parameter 3 conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =10a symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,6 i sm pulsed source current 2,6 v g =v d =0v , force current v sd diode forward voltage 2 v gs =0v , i s =5a , t j =25 --- --- 1.2 v n-channel electrical characteristics (t j =25 , unless otherwise noted) note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. diode characteristics guaranteed avalanche characteristics 1.2 12.56 3.24 8 --- --- 14.2 --- --- 24.4 --- --- 1378 --- --- 86 --- --- 8 --- --- 16 =22.6a UM6301
=-26.6a --- --- -11.5 a 29 --- --- mj --- 70 --- output capacitance input capacitance --- 45.8 --- turn-off delay time rise time turn-on delay time --- 2.95 --- gate-source charge total gate charge (-4.5v) =-6a --- 15 --- s --- 4.56 --- gate threshold voltage -2.5 v =-6a --- 46 60 --- -0.03 --- =-250ua -60 --- --- v 3 n-ch and p-ch fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d ? bv dss a? t j bv dss temperature coefficient reference to 25 , i d =-1ma v/ v gs =-10v , i d r ds(on) static drain-source on-resistance 2 v gs =-4.5v , i d =-3a --- 65 85 m : v gs(th) ? v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =-250ua mv/ v ds =-24v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =-24v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =-10v , i d q g q gs q gd gate-drain charge v ds =-20v , v gs =-4.5v , i d =-6a nc t d(on) t r t d(off) t f fall time v dd =-12v , v gs =-10v , r g =3.3 : , i d =-5a ns c iss c oss c rss reverse transfer capacitance v ds =-25v , v gs =0v , f=1mhz pf symbol parameter 3 conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-10a symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,6 i sm pulsed source current 2,6 v g =v d =0v , force current v sd diode forward voltage 2 v gs =0v , i s =-6a , t j =25 --- --- -1.2 v p-channel electrical characteristics (t j =25 , unless otherwise noted) note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. guaranteed avalanche characteristics diode characteristics 1.2 --- 9.86 --- --- 3.08 --- --- 9.6 --- --- 18 --- --- 45.8 --- --- 1447 --- --- 97.3 --- --- -5.7 a 26.6a = UM6301
0.5 0 =8a =8a 4 n-ch and p-ch fast switching mosfets 0 2 4 6 8 10 00.511.5 v ds drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 15 18 21 24 27 246810 v gs (v) r dson (m
) i d 0 2 4 6 8 10 00.30.60.9 v sd , source-to-drain voltage (v) i s - source current(a) t j =150 : t j =25 : 0 1.5 3 4.5 6 q g , total gate charge (nc) v gs , gate to source voltage (v) i d 1 -50 0 50 100 150 t j ,junction temperature ( : ) normalized v gs(th) -50 0 50 100 150 t j , junction temperature ( : ) normalized on resistance n-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 v gs(th) vs. t j fig.6 normalized r dson vs. t j =8a = 8a 5 0 10 15 20 0 0.5 1.5 0.5 0 1.0 1.5 2.0 2.5 3.0 UM6301
5 n-ch and p-ch fast switching mosfets 10 100 1000 15913172125 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0 0 1 10 100 0.1 1 10 100 v ds (v) i d (a) 10us 100us 10ms 100ms dc t c =25 : single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r jc ) 0.01 0.02 0.1 0.2 duty=0.5 0.001 p dm d = t on /t t jpeak = t c +p dm xr jc t on t 0.05 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform UM6301
=-5a id=-5a 6 n-ch and p-ch fast switching mosfets 0 2 4 6 8 10 00.511.52 -v ds , drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 246810 -v gs (v) r dson (m
) 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 : t j =25 : 0 2 4 6 8 10 q g , total gate charge (nc) -v gs gate to source voltage (v) i d 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( : ) normalized -v gs(th) 0.5 1.0 1.5 2.0 t j , junction temperature ( : ) normalized on resistance p-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j id=-5a 40 80 120 160 =-5a 5 10 15 0 -50 0 50 100 UM6301
7 n-ch and p-ch fast switching mosfets 10 100 1000 15913172125 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0 0 1 10 100 0.1 1 10 100 -v ds (v) -i d (a) t c =25 : single pulse dc 100ms 10ms 1ms 100us 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t jpeak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform 10000 UM6301
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