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| inchange semiconductor product specification silicon npn power transistors 2n5664 2N5665 description ? with to-66 package ? high breakdown voltage applications ? high speed switching and linear amplifier ? high-voltage operational amplifiers ? switching regulators ,converters ? deflection stages and high fidelity amplifers pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2n5664 250 v cbo collector-base voltage 2N5665 open emitter 400 v 2n5664 200 v ceo collector-emitter voltage 2N5665 open base 300 v v ebo emitter-base voltage open collector 6 v i c collector current 5.0 a i b base current 1.0 a p t total power dissipation t c =25 ?? 52.5 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 5.0 ??/w fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2n5664 2N5665 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n5664 200 v (br)ceo collector-emitter breakdown voltage 2N5665 i c =10ma ; i b =0 300 v v (br)ebo emitter-base breakdown voltage i e =10 | a ; i c =0 6 v 2n5664 i c =3a; i b =0.3a v cesat-1 collector-emitter saturation voltage 2N5665 i c =3a; i b =0.6a 0.4 v v cesat-2 collector-emitter saturation voltage i c =5a; i b =1a 1.0 v 2n5664 i c =3a; i b =0.3a v besat-1 base-emitter saturation voltage 2N5665 i c =3a; i b =0.6a 1.2 v v besat-2 base-emitter saturation voltage i c =5a; i b =1a 1.5 v 2n5664 v ce =200v;v be(off) =1.5v i ces collector cut-off current 2N5665 v ce =300v;v be(off) =1.5v 0.2 ma 2n5664 v cb =250v; i e =0 i cbo collector cut-off current 2N5665 v cb =400v; i e =0 1.0 ma 2n5664 40 h fe-1 dc current gain 2N5665 i c =0.5a ; v ce =2v 25 2n5664 40 120 h fe-2 dc current gain 2N5665 i c =1a ; v ce =5v 25 75 2n5664 15 h fe-3 dc current gain 2N5665 i c =3a ; v ce =5v 10 h fe-4 dc current gain i c =5a ; v ce =5v 5 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 120 pf t on turn-on time v cc =30v;i c =1a;i b1 =-i b2 =30ma 0.25 | s 2n5664 1.5 t off turn-off time 2N5665 v cc =30v;i c =1a;i b1 =-i b2 =50ma 2.0 | s inchange semiconductor product specification 3 silicon npn power transistors 2n5664 2N5665 package outline fig.2 outline dimensions |
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