550 50 156 48 100 350 50 120 95 40 dd g g excelics epa120b/EPA120BV data sheet high efficiency heterojunction power fet +29.5dbm typical output power 9.0db typical power gain for epa120b and 10.5db for EPA120BV at 18ghz 0.3 x 1200 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, linearity and reliability EPA120BV with via hole source grounding idss sorted in 30ma per bin range electrical characteristics (t a = 25 o c) symbols param eters/test conditions epa120b EPA120BV unit min typ max min typ max p 1db output power at 1db compression f=12ghz vds=8v, ids=50% idss f=18ghz 28.0 29.5 29.5 28.0 29.5 29.5 dbm g 1db gain at 1db compression f=12ghz vds=8v, ids=50% idss f=18ghz 10.0 11.5 9.0 11.5 13.0 10.5 db pae gain at 1db compression vds=8v, ids=50% idss f=12ghz 45 46 % idss saturated drain current vds=3v, vgs=0v 220 360 500 220 360 500 ma gm transconductance vds=3v, vgs=0v 240 380 240 380 ms vp pinch-off voltage vds=3v, ids=3.0ma -1.0 -2.5 -1.0 -2.5 v bvgd drain breakdown voltage igd=1.2ma -11 -15 -11 -15 v bvgs source breakdown voltage igs=1.2ma -7 -14 -7 -14 v rth thermal resistance (au-sn eutectic attach) 40 30 o c/w maximum ratings at 25 o c symbols param eters epa120b EPA120BV absolute 1 continuous 2 absolute 1 continuous 2 vds drain-source voltage 12v 8v 12v 8v vgs gate-source voltage -8v -3v -8v -3v ids drain current idss 355ma idss 470ma igsf forward gate current 60ma 10ma 60ma 10ma pin input power 27dbm @ 3db compression 27dbm @ 3db compression tch channel temperature 175 o c 150 o c 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c -65/175 o c -65/150 o c pt total power dissipation 3.4w 2.8w 4.5w 3.8w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970-8664 fax: (408) 970-8998 web site: www.excelics.com chip thickness: 75 20 microns all dimensions in microns : via hole no via hole for epa120b
epa120b/epa120b v data sheet high efficiency heterojunction po w er fet epa120b s-para m eters epa120b 8v, 1/2 idss f req --- s 1 1 -- - --- s 2 1 -- - --- s 1 2 -- - --- s 2 2 --- ( g h z) m a g a n g m a g a n g m a g a n g m a g a n g 1.0 0.87 3 -97. 8 14.61 4 124.8 0.03 0 40.1 0.24 5 -89.7 2.0 0.86 6 -133.3 8.97 4 103.2 0.03 5 27.0 0.23 9 -119.4 4.0 0.86 5 -159.6 4.84 1 81.9 0.03 8 19.8 0.25 8 -137.9 6.0 0.86 4 -170.9 3.28 7 67.7 0.03 7 21.8 0.29 6 -142.5 8.0 0.87 2 -177.9 2.47 6 55.8 0.03 7 23.5 0.34 4 -145.9 10.0 0.87 7 176.9 1.97 4 45.6 0.03 5 27.7 0.38 5 -149.2 12.0 0.89 0 171.7 1.63 3 35.0 0.03 6 30.8 0.42 9 -154.4 14.0 0.89 9 166.4 1.36 7 24.3 0.03 9 30.5 0.47 2 -161.9 16.0 0.90 1 161.5 1.14 8 13.5 0.04 1 29.9 0.51 9 -171.5 18.0 0.91 7 156.9 0.98 0 2.7 0.04 5 27.3 0.57 5 178.6 20.0 0.90 8 152.3 0.81 9 -7.9 0.05 1 26.1 0.63 5 169.2 22.0 0.89 6 149.4 0.69 8 -16.0 0.05 8 26.3 0.68 6 162.5 24.0 0.90 3 145.8 0.61 6 -23.4 0.06 9 26.7 0.73 4 157.7 26.0 0.88 6 143.8 0.55 2 -28.0 0.08 4 27.1 0.75 0 155.7 s - p a ra me te rs EPA120BV 8v, 1/2 idss n o t e : t h e data inc l ud e d 0.7 mi l s diam e t e r a u b o ndin g w i r e s; 2 g at e w i r e s, 15 mi l s e ach; 2 d r ain w i r e s, 20 mi l s e ach; 6 s o urc e w ir e s, 7 mi l s e ach; n o s o urc e w ir e s f o r ep a 120b v . f req --- s 1 1 -- - --- s 2 1 -- - --- s 1 2 -- - --- s 2 2 --- ( g h z) m a g a n g m a g a n g m a g a n g m a g a n g 1.0 0.88 7 -88.4 15.05 9 130.0 0.029 41. 8 0.27 2 -73.8 2.0 0.87 9 -127.4 9.715 107.1 0.036 25. 4 0.25 6 -107.7 4.0 0.88 7 -157.2 5.30 9 84.0 0.038 11. 4 0.27 4 -129.7 6.0 0.89 9 -168.8 3.55 4 69.5 0.03 6 6. 6 0.31 6 -137.2 8.0 0.90 5 -175.1 2.65 1 58.1 0.03 5 3. 3 0.37 2 -140.3 10.0 0.90 9 -179.4 2.09 1 48.2 0.03 2 1. 0 0.43 0 -143.1 12.0 0.91 3 176.6 1.72 6 38.2 0.03 0 -0.8 0.48 4 -147.7 14.0 0.91 6 171.5 1.46 2 27.9 0.03 0 -2.9 0.52 8 -154.0 16.0 0.92 5 165.2 1.26 3 16.8 0.03 0 -6.7 0.57 0 -162.0 18.0 0.93 0 157.9 1.08 8 4.6 0.03 0 -10. 1 0.61 1 -171.8 20.0 0.93 9 151.1 0.93 6 -7.4 0.03 1 -14. 1 0.654 178.3 f req --- s 1 1 -- - --- s 2 1 -- - --- s 1 2 -- - --- s 2 2 --- ( g h z) m a g a n g m a g a n g m a g a n g m a g a n g 21.0 0.94 6 149. 8 0.82 4 -11.5 0.02 9 -15.2 0.700 174.9 22.0 0.95 6 148. 9 0.75 2 -16.0 0.03 0 -13.2 0.720 170.6 24.0 0.96 7 148. 0 0.63 6 -24.1 0.02 9 -11.8 0.769 164.6 26.0 0.96 7 148. 0 0.55 4 -30.0 0.02 9 -4.9 0.799 162.4 28.0 0.95 6 148. 0 0.50 3 -34.2 0.03 3 0.1 0.828 161.4 30.0 0.95 1 146. 2 0.47 3 -39.5 0.03 4 -3.5 0.850 161.0 32.0 0.93 7 141. 5 0.44 3 -47.2 0.03 3 -11.3 0.854 158.1 34.0 0.93 1 134. 2 0.40 3 -57.4 0.02 9 -15.4 0.858 151.4 36.0 0.94 9 125. 4 0.36 3 -69.3 0.02 9 -29.0 0.881 140.4 38.0 0.96 9 117. 5 0.31 6 -81.0 0.03 8 -56.8 0.910 127.9 40.0 0.98 1 113. 5 0.28 4 -92.8 0.05 0 -85.1 0.930 119.2 p - 1 d b & p a e vs. v d s 24 26 28 30 32 34 36 38 40 4 5 6 7 8 drain-sour c e vo l tag e ( v ) p- 1 d b (d b m ) 20 25 30 35 40 45 50 55 pa e (% ) f = 12 g h z i d s = 5 0 % i d s s p o ut & p a e vs. p in 0 10 20 30 40 50 - 1 0 - 5 0 5 1 0 1 5 2 0 2 5 p i n ( d b m ) p o u t (d bm ) o r pa e (%) f = 1 2 g h z vd s = 8 v, id s = 5 0 % idss p a e p out
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